Assemblies which include ruthenium-containing conductive gates
Some embodiments include a memory cell having a conductive gate comprising ruthenium. A charge-blocking region is adjacent the conductive gate, a charge-storage region is adjacent the charge-blocking region, a tunneling material is adjacent the charge-storage region, and a channel material is adjacent the tunneling material. Some embodiments include an assembly having a vertical stack of alternating insulative levels and wordline levels. The wordline levels contain conductive wordline material which includes ruthenium. Semiconductor material extends through the stack as a channel structure. Charge-storage regions are between the conductive wordline material and the channel structure. Charge-blocking regions are between the charge-storage regions and the conductive wordline material. Some embodiments include methods of forming integrated assemblies.
1. A memory cell, comprising:
a conductive gate comprising ruthenium;
a charge-blocking region adjacent the conductive gate;
a charge-storage region adjacent the charge-blocking region;
a tunneling material adjacent the charge-storage region;
a channel material adjacent the tunneling material;
a dielectric barrier material directly against the ruthenium of the conductive gate, and between the charge-blocking region and the conductive gate; and
wherein the conductive gate comprises:
a conductive core material comprising one or more metals other than the ruthenium;
a second conductive material adjacent the conductive core material and comprising at least one metal nitride; and
a third conductive material adjacent the second conductive material and comprising the ruthenium.
2. The memory cell of claim 1 wherein the channel material comprises one or more of silicon, germanium, III/V semiconductor material, and semiconductor oxide.
3. The memory cell of claim 1 wherein the channel material comprises silicon.
4. The memory cell of claim 1 wherein the conductive gate consists of the ruthenium.
5. The memory cell of claim 1 wherein the conductive core material consists of said one or more metals other than the ruthenium.
6. The memory cell of claim 1 wherein the conductive core material includes one or both of tungsten and molybdenum.
7. A memory cell, comprising:
a conductive gate comprising ruthenium;
a charge-blocking region adjacent the conductive gate;
a charge-storage region adjacent the charge-blocking region;
a tunneling material adjacent the charge-storage region;
a channel material adjacent the tunneling material;
a dielectric barrier material directly against the ruthenium of the conductive gate, and between the charge-blocking region and the conductive gate; and
wherein the conductive gate comprises:
a conductive core material comprising one or more metals other than the ruthenium;
a second conductive material adjacent the conductive core material and comprising one or both of titanium and tungsten; and
a third conductive material adjacent the second conductive material and comprising the ruthenium.
8. The memory cell of claim 7 wherein:
the conductive core material consists of tungsten;
the second conductive material comprises one or both of titanium nitride and tungsten nitride; and
the third conductive material consists of the ruthenium.