LED chip mounting method and device
An LED mounted method includes: providing a circuit substrate having a plurality of conductive pads; through a pick and place module, disposing a plurality of conductors on the conductive pads; disposing a plurality of LED chips on the circuit substrate, with each LED chip being disposed on at least two conductors; projecting a laser source generated by a laser generation module to each LED chip so that the laser source passes through the LED chip and is projected onto at least two conductors; and curing the conductor disposed between the LED chip and the circuit substrate by irradiation of the laser source so that the LED chip is mounted on the circuit substrate.
1. An LED chip mounting device, comprising:
a carrier module for carrying a circuit substrate including a plurality of conductive pads, and a plurality of conductors being respectively disposed on the conductive pads;
a pick and place module for disposing a plurality of LED chips on the circuit substrate, and each of the LED chips being disposed on at least two of the conductors; and
a laser generation module, and that the laser source generated by the laser generation module is directed to each of the LED chips so that the laser source passes through the LED chip and is projected onto at least two of the conductors;
wherein the carrier module, the pick and place module, and the laser generation module are adjacent to each other and disposed on a same production line;
wherein the conductor disposed between the LED chip and the circuit substrate is cured by irradiation of the laser source so that the LED chip is mounted on the circuit substrate.
2. The LED chip mounting device according to claim 1 , wherein each of the LED chips includes an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer that are in a stacked arrangement, wherein the n-type conductive layer is an n-type nitrogen gallium material layer or an n-type gallium arsenide material layer, the light-emitting layer is multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer; wherein the pick and place module has a gas guiding channel, and the laser source generated by the laser generation module passes through the gas guiding channel.
3. The LED chip mounting device according to claim 1 , wherein each of the LED chips includes a base layer disposed in a stack, an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer, wherein the base layer is a sapphire base layer, the n-type conductive layer is an n-type gallium nitride material layer or an n-type gallium arsenide material layer, the light-emitting layer is a multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer; wherein the pick and place module has a gas guiding channel, and the laser source generated by the laser generation module passes through the gas guiding channel.
4. An LED mounted device, comprising a carrier module, a pick and place module, and a laser generation module, wherein the carrier module, the pick and place module, and the laser generation module are disposed on a same production line, and a laser source generated by the laser generation module is directed to an LED chip so that the laser source passes through the LED chip and is projected onto at least two conductors, and the conductor is cured by irradiation of the laser source, so that the LED chip is mounted on a circuit substrate.
5. The LED mounted device according to claim 4 , wherein each of the LED chips includes an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer that are in a stacked arrangement, wherein the n-type conductive layer is an n-type nitrogen gallium material layer or an n-type gallium arsenide material layer, the light-emitting layer is multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer; wherein the pick and place module has a gas guiding channel, and the laser source generated by the laser generation module passes through the gas guiding channel.
6. The LED mounted device according to claim 4 , wherein each of the LED chips includes a base layer, an n-type conductive layer, a light-emitting layer through which the laser source passes, and a p-type conductive layer that are in a stacked arrangement, wherein the base layer is a sapphire base layer, the n-type conductive layer is an n-type gallium nitride material layer or an n-type gallium arsenide material layer, the light-emitting layer is a multi-quantum well structure layer, and the p-type conductive layer is a p-type gallium nitride material layer or a p-type gallium arsenide material layer; wherein the pick and place module has a gas guiding channel, and the laser source generated by the laser generation module passes through the gas guiding channel.