Photo detector systems and methods of operating same

1. A dynamic photodiode, comprising:

a substrate including a first surface opposite a second surface;

a pillar formation extruding perpendicularly from the first surface;

a first doped region disposed on the first surface or the second surface, the first doped region including a first contact configured to receive a first voltage;

a second doped region disposed on a top surface of the pillar formation, the second doped region including a second contact configured to receive a second voltage;

a first gate disposed on a lateral surface of the pillar formation, the first gate including a first gate contact configured to receive a gate voltage; and

a second gate disposed on another lateral surface of the pillar formation, the second gate including a second gate contact configured to receive the gate voltage or another gate voltage, wherein:

exposed portions of the substrate form light absorbing regions configured to generate electron-hole pairs in the substrate.

2. The dynamic photodiode of claim 1 , further comprising a third doped region disposed on the first surface, the third doped region including a third contact that is grounded.

3. A dynamic photodiode, comprising:

a substrate including a major surface;

a pillar formation extruding perpendicularly from the major surface;

a first doped region disposed on a bottom surface of the pillar formation, the first doped region including a first contact configured to receive a first voltage;

a second doped region disposed on a top surface of the pillar formation, the second doped region including a second contact configured to receive a second voltage;

a first gate disposed proximate to the first doped region on a lateral surface of the pillar formation, the first gate including a first gate contact configured to receive a first gate voltage;

a second gate disposed proximate to the first doped region on another lateral surface of the pillar formation, the second gate including a second gate contact configured to receive the first gate voltage or a second gate voltage;

a third gate disposed proximate to the second doped region on the lateral surface of the pillar formation, the third gate including a third gate contact configured to receive a third gate voltage; and

a fourth gate disposed proximate to the second doped region on the another lateral surface of the pillar formation, the fourth gate including a fourth gate contact configured to receive the third gate voltage or a fourth gate voltage, wherein:

exposed portions of the substrate form light absorbing regions configured to generate electron-hole pairs in the substrate.

4. The dynamic photodiode of claim 3 , further comprising a third doped region disposed on the major surface, the third doped region including a third contact that is grounded.

5. A dynamic photodiode, comprising:

a substrate including a major surface;

a first pillar formation extruding perpendicularly from the major surface;

a second pillar formation extruding perpendicularly from the major surface;

a first doped region disposed on a top surface of the first pillar formation, the first doped region including a first contact configured to receive a first voltage;

a second doped region disposed on a top surface of the second pillar formation, the second doped region including a second contact configured to receive a second voltage;

a first gate disposed on a lateral surface of the first pillar formation, the first gate including a first gate contact configured to receive a first gate voltage;

a second gate disposed on another lateral surface of the first pillar formation, the second gate including a second gate contact configured to receive the first gate voltage or a second gate voltage;

a third gate disposed on the lateral surface of the second pillar formation, the third gate including a third gate contact configured to receive a third gate voltage; and

a fourth gate disposed on the another lateral surface of the second pillar formation, the fourth gate including a fourth gate contact configured to receive the third gate voltage or a fourth gate voltage, wherein:

exposed portions of the substrate form light absorbing regions configured to generate electron-hole pairs in the substrate.

6. The dynamic photodiode of claim 5 , further comprising a third doped region disposed on the major surface, the third doped region including a third contact that is grounded.

7. A dynamic photodiode, comprising:

a substrate including a major surface;

a first hedge formation extruding perpendicularly from the major surface;

a second hedge formation extruding perpendicularly from the major surface and substantially parallel to the first hedge formation;

a first gate disposed on a top surface and lateral surfaces of the first hedge formation, the first gate including a first gate contact configured to receive a first gate voltage;

a second gate disposed on the top surface and the lateral surfaces of the first hedge formation, the second gate including a second gate contact configured to receive the first gate voltage or a second gate voltage;

a first doped region disposed on the top surface of the first hedge formation between the first gate and the second gate, the first doped region including a first contact configured to receive a first voltage; and

a second doped region disposed on a top surface of the second hedge formation, the second doped region including a second contact configured to receive a second voltage, wherein:

exposed portions of the substrate form light absorbing regions configured to generate electron-hole pairs in the substrate.

8. The dynamic photodiode of claim 7 , further comprising:

a third gate disposed on the top surface and lateral surfaces of the second hedge formation, the third gate including a third gate contact configured to receive a third gate voltage; and

a fourth gate disposed on the top surface and the lateral surfaces of the second hedge formation, the fourth gate including a fourth gate contact configured to receive the third gate voltage or a fourth gate voltage, wherein:

the second doped region is disposed between the third gate and the fourth gate.

9. A dynamic photodiode, comprising:

a substrate including a major surface;

a first hedge formation extruding perpendicularly from the major surface;

a second hedge formation extruding perpendicularly from the major surface and substantially parallel to the first hedge formation;

a first resettable region disposed on a top surface the first hedge formation;

a second resettable region disposed on the top surface of the first hedge formation;

a first doped region disposed on the top surface of the first hedge formation between the first resettable region and the second resettable region, the first doped region including a first contact configured to receive a first voltage; and

a second doped region disposed on a top surface of the second hedge formation, the second doped region including a second contact configured to receive a second voltage, wherein:

exposed portions of the substrate form light absorbing regions configured to generate electron-hole pairs in the substrate.

10. The dynamic photodiode of claim 9 , wherein:

the first resettable region is an n+ doped region and includes a first resettable contact configured to receive a reset voltage; and

the second resettable region is an n+ doped region and includes a second resettable contact configured to receive the reset voltage or another reset voltage.

11. A dynamic photodiode, comprising:

a substrate including a major surface;

a hedge formation extruding perpendicularly from the major surface;

a first resettable region disposed on a top surface the hedge formation;

a second resettable region disposed on the top surface of the hedge formation;

a first doped region disposed on the top surface of the hedge formation between the first resettable region and the second resettable region, the first doped region including a first contact configured to receive a first voltage; and

a second doped region disposed on a top surface of the hedge formation, the second doped region including a second contact configured to receive a second voltage, wherein:

exposed portions of the substrate form light absorbing regions configured to generate electron-hole pairs in the substrate.

12. The dynamic photodiode of claim 11 , wherein:

the first resettable region is an n+ doped region and includes a first resettable contact configured to receive a reset voltage; and

the second resettable region is an n+ doped region and includes a second resettable contact configured to receive the reset voltage or another reset voltage.

13. A dynamic photodiode, comprising:

a substrate including a major surface;

a hedge formation extruding perpendicularly from the major surface;

a first gate disposed on a top surface and lateral surfaces of the hedge formation, the first gate including a first gate contact configured to receive a first gate voltage;

a second gate disposed on the top surface and the lateral surfaces of the hedge formation, the second gate including a second gate contact configured to receive the first gate voltage or a second gate voltage;

a first doped region disposed on the top surface of the hedge formation between the first gate and the second gate, the first doped region including a first contact configured to receive a first voltage; and

a second doped region disposed on a top surface of the hedge formation, the second doped region including a second contact configured to receive a second voltage, wherein:

exposed portions of the substrate form light absorbing regions configured to generate electron-hole pairs in the substrate.

14. The dynamic photodiode of claim 13 , further comprising:

a third gate disposed on the top surface and lateral surfaces of the hedge formation, the third gate including a third gate contact configured to receive a third gate voltage; and

a fourth gate disposed on the top surface and the lateral surfaces of the hedge formation, the fourth gate including a fourth gate contact configured to receive the third gate voltage or a fourth gate voltage, wherein:

the second doped region is disposed between the third gate and the fourth gate.