Frequency-selective metasurface integrated uncooled microbolometers
View Patent ↗A metasurface integrated microbolometer having a sensing layer (e.g., Si x Ge y O 1-x-y ). The presence of the metasurface provides selectivity with respect to wavelength, polarization and angle-of-incidence. The presence of the metasurface into the microbolometer affects conversion of electromagnetic to thermal energy, thermal response, electrical integration of the microbolometer, and the tradeoff between resistivity and temperature coefficient of resistance, thereby allowing the ability to obtain a sensing with high temperature coefficient of resistance with lower resistivity values than that of films without the metasurface. The presence of the metasurface removes the need for a Fabry-Perot cavity.
1. A metasurface integrated uncooled microbolometer comprising:
a substrate;
a pixel that comprises:
an integrated metasurface-sensing layer that comprises:
a temperature-sensing layer that comprises a semiconductor having a Temperature Coefficient of Resistance (TCR) at 20° C. of at least 1%/K;
a metasurface on a surface of the temperature-sensing layer, wherein the metasurface comprises a layer of patterned metal elements configured for the direct absorption of incident infrared radiation and to convert the absorbed infrared radiation to thermal energy and conduct the thermal energy to the temperature-sensing layer;
wherein the integrated metasurface-layer has a resistivity at 20° C. that is less than that of an otherwise identical temperature-sensing layer at 20° C. without the metasurface thereon;
a ground layer; and
an insulator layer configured to electrically isolate the temperature-sensing layer from the ground layer; and
a support configured to electrically connect the temperature-sensing layer of the pixel to the substrate and to space the pixel from the substrate by a distance to thermally isolate the pixel from the substrate; and
wherein the metasurface integrated uncooled microbolometer has a 1/f noise coefficient (K f ) that is lower than an otherwise identical microbolometer without the metasurface.
2. The metasurface integrated uncooled microbolometer according to claim 1 , wherein the semiconductor of the temperature-sensing layer comprises silicon germanium oxide of the type Si x Ge y O 1-x-y , wherein x is in a range from about 0.02 to about 0.85, and y is in a range from about 0.05 to about 0.75.
3. The metasurface integrated uncooled microbolometer according to claim 1 , wherein the semiconductor of the temperature-sensing layer comprises amorphous silicon.
4. The metasurface integrated uncooled microbolometer according to claim 1 , wherein the semiconductor of the temperature-sensing layer comprises vanadium oxide.
5. The metasurface integrated uncooled microbolometer according to claim 1 , wherein the layer of patterned metal elements of the metasurface comprises a hexagonal close packed (HCP) array of metal disks of at least one diameter and of a least one periodicity.
6. The metasurface integrated uncooled microbolometer according to claim 5 , wherein:
each metal disk of the HCP array has a diameter selected from a multiplicity of diameters and the metal disks of multiple diameters are tessellated over the array with a single periodicity;
the metal of the disks is aluminum, titanium, or a combination thereof; and
the temperature-sensing layer has a thickness dependent upon said single periodicity;
in order to achieve broadband absorptance of the incident infrared radiation.
7. The metasurface integrated uncooled microbolometer according to claim 6 , wherein the broadband absorptance of the incident infrared radiation is characterized by more than 90% absorption of incident infrared radiation of wavelengths in a range of 8-14 μm.
8. The metasurface integrated uncooled microbolometer according to claim 5 , wherein:
the metal disks of the HCP array have a single diameter and a single periodicity;
the metal of the disks is gold; and
the temperature-sensing layer has a thickness dependent upon said single periodicity;
in order to achieve a narrowband absorptance of the incident infrared radiation.
9. The metasurface integrated uncooled microbolometer according to claim 8 , wherein the narrowband absorptance of the incident radiation is characterized by unity absorptance of the incident infrared radiation of a particular wavelength.
10. The metasurface integrated uncooled microbolometer according to claim 1 , wherein the layer of patterned metal elements of the metasurface comprises an array of discrete linear elements that provide a polarized response.
11. The metasurface integrated uncooled microbolometer according to claim 1 , wherein the support is underneath the sensing portion pixel.
12. The metasurface integrated uncooled microbolometer according to claim 1 comprises comprising a plurality of the pixels and corresponding supports configured in a focal plane array.
13. A method of fabricating a metasurface integrated uncooled microbolometer, the method comprising:
providing a substrate; and
forming a pixel, the forming of the pixel comprising:
forming an integrated metasurface-sensing layer, the forming of the integrated metasurface-sensing layer comprising:
forming a temperature-sensing layer that comprises a semiconductor having a Temperature Coefficient of Resistance (TCR) at 20° C. of at least 1%/K;
forming a metasurface on a surface of the temperature-sensing layer, wherein the metasurface comprises a layer of patterned metal elements configured for the direct absorption of incident infrared radiation and to convert the absorbed infrared radiation to thermal energy and conduct the thermal energy to the temperature-sensing layer;
wherein the integrated metasurface-layer has a resistivity at 20° C. that is less than that of an otherwise identical temperature-sensing layer at 20° C. without the metasurface thereon;
forming a ground layer; and
forming an insulator layer configured to electrically isolate the temperature-sensing layer from the ground layer; and
forming a support configured to electrically connect the temperature-sensing layer of the pixel to the substrate and to space the pixel from the substrate by a distance to thermally isolate the pixel from the substrate; and
wherein the metasurface integrated uncooled microbolometer has a 1/f noise coefficient (K f ) that is lower than an otherwise identical microbolometer without the metasurface.
14. The method according to claim 13 , wherein the semiconductor of the temperature-sensing layer comprises silicon germanium oxide of the type Si x Ge y O 1-x-y , wherein x is in a range from about 0.02 to about 0.85, and y is in a range from about 0.05 to about 0.75.
15. The method according to claim 13 , wherein the semiconductor of the temperature-sensing layer comprises amorphous silicon.
16. The method according to claim 13 , wherein the semiconductor of the temperature-sensing layer comprises vanadium oxide.
17. The method according to claim 13 , wherein the layer of patterned metal elements of the metasurface comprises a hexagonal close packed (HCP) array of metal disks of at least one diameter and of a least one periodicity.
18. The method according to claim 17 , wherein:
each metal disk of the HCP array has a diameter selected from a multiplicity of diameters and the metal disks of multiple diameters are tessellated over the array with a single periodicity;
the metal of the disks is aluminum, titanium, or a combination thereof; and
the temperature-sensing layer has a thickness dependent upon said single periodicity;
in order to achieve broadband absorptance of the incident infrared radiation.
19. The method according to claim 18 , wherein the broadband absorptance of the incident infrared radiation is characterized by more than 90% absorption of incident infrared radiation of wavelengths in a range of 8-14 μm.
20. The method according to claim 17 , wherein:
the metal disks of the HCP array have a single diameter and a single periodicity;
the metal of the disks is gold; and
the temperature-sensing layer has a thickness dependent upon said single periodicity;
in order to achieve a narrowband absorptance of the incident infrared radiation.
21. The method according to claim 20 , wherein the narrowband absorptance of the incident radiation is characterized by unity absorptance of the incident infrared radiation of a particular wavelength.
22. The method according to claim 13 , wherein the layer of patterned metal elements of the metasurface comprises an array of discrete linear elements that provide a polarized response.
23. The method according to claim 13 , wherein the support is underneath the pixel.
24. The method according to claim 13 , further comprising forming a plurality of the pixels and corresponding supports on the substrate configured in a focal plane array.