SiC single crystal growth apparatus containing movable heat-insulating material and growth method of SiC single crystal using the same
A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.
1. A SiC single crystal growth apparatus, comprising:
a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material;
a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member;
a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member, and
a lift-type driving member which is configured to support the heat-insulating material from a lower side of the heat-insulating material and to move the heat-insulating material.
2. The SiC single crystal growth apparatus according to claim 1 , further comprising:
a support which supports the guide member at an end thereof on a raw material side,
wherein the support has a structure which suppresses entry of a raw material gas into the outside of the guide member.
3. A growth method of a SiC single crystal using the SiC single crystal growth apparatus according to claim 1 , comprising:
a crystal growth step of growing a single crystal from a seed crystal installed in the seed crystal installation part,
wherein a positional relationship between an end surface of a raw material side of the heat-insulating material and a surface of the single crystal is controlled in a process of the crystal growth step using the lift-type driving member which is configured to move the heat-insulating material.
4. The growth method of a SiC single crystal according to claim 3 , wherein the end surface of the raw material side of the heat-insulating material is controlled to locate within 20 mm from the surface of the single crystal in the process of crystal growth.
5. The growth method of a SiC single crystal according to claim 3 , wherein the end surface of the raw material side of the heat-insulating material is controlled to be closer to the seed crystal installation part than the surface of the single crystal in the process of crystal growth.
6. The growth method of a SiC single crystal according to claim 3 , wherein a thickness of the heat-insulating material is half or less of a growth amount of the SiC single crystal which is manufactured at 0.2 mm or more.
7. The growth method of a SiC single crystal according to claim 3 , wherein the positional relationship between the end surface of the raw material side of the heat-insulating material and the surface of the single crystal is controlled at the start of crystal growth.
8. The SiC single crystal growth apparatus according to claim 1 , wherein the guide member extends vertically in the vertical direction.
9. The SiC single crystal growth apparatus according to claim 8 , wherein a lower end of the guide member is supported by a support which closes a space between the lower end of the guide member and the crucible.
10. A SiC single crystal growth apparatus, comprising:
a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material;
a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member;
a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member, and
a driving member, which extends to an outside of the crucible through a notch or opening which is provided in part of a side surface of the crucible and is configured to move the heat-insulating material by raising and lowering the driving member.
11. The SiC single crystal growth apparatus according to claim 10 , further comprising:
a support which supports the guide member at an end thereof on a raw material side,
wherein the support has a structure which suppresses entry of a raw material gas into the outside of the guide member.
12. A growth method of a SiC single crystal using the SiC single crystal growth apparatus according to claim 10 , comprising:
a crystal growth step of growing a single crystal from a seed crystal installed in the seed crystal installation part,
wherein a positional relationship between an end surface of a raw material side of the heat-insulating material and a surface of the single crystal is controlled in a process of the crystal growth step using the driving member which is configured to move the heat-insulating material.
13. The growth method of a SiC single crystal according to claim 12 , wherein the end surface of the raw material side of the heat-insulating material is controlled to locate within 20 mm from the surface of the single crystal in the process of crystal growth.
14. The growth method of a SiC single crystal according to claim 12 , wherein the end surface of the raw material side of the heat-insulating material is controlled to be closer to the seed crystal installation part than the surface of the single crystal in the process of crystal growth.
15. The growth method of a SiC single crystal according to claim 12 , wherein a thickness of the heat-insulating material is half or less of a growth amount of the SiC single crystal which is manufactured at 0.2 mm or more.
16. The growth method of a SiC single crystal according to claim 12 , wherein the positional relationship between the end surface of the raw material side of the heat-insulating material and the surface of the single crystal is controlled at the start of crystal growth.
17. The SiC single crystal growth apparatus according to claim 10 , wherein the guide member extends vertically in the vertical direction.
18. The SiC single crystal growth apparatus according to claim 17 , wherein a lower end of the guide member is supported by a support which closes a space between the lower end of the guide member and the crucible.