Heat-insulating shield member and single crystal manufacturing apparatus having the same
The present invention provides a heat-insulating shield member, wherein the heat-insulating shield member is arranged and used between a SiC source housing ( 3 ) and a substrate support ( 4 ) in a single crystal manufacturing apparatus ( 10 ), wherein the single crystal manufacturing apparatus ( 10 ) comprises a crystal growth container ( 2 ) and a heating member ( 5 ) arranged on an outer periphery of the crystal growth container ( 2 ), wherein the crystal growth container ( 2 ) includes the SiC source housing ( 3 ) disposed at a lower portion of the apparatus, and the substrate support ( 4 ) which is arranged above the SiC source housing ( 3 ) and supports a substrate (S) used for crystal growth so as to face the SiC source housing ( 3 ), and wherein the single crystal manufacturing apparatus ( 10 ) is configured to grow a single crystal (W) from a SiC source (M) on the substrate (S) by sublimating the SiC source (M) from the SiC source housing ( 3 ).
1. A heat-insulating shield member, wherein
the heat-insulating shield member is arranged and used between a SiC source housing and a substrate support in a single crystal manufacturing apparatus,
wherein the single crystal manufacturing apparatus comprises
a crystal growth container and
a heating member arranged on an outer periphery of the crystal growth container,
wherein the crystal growth container includes
the SiC source housing, wherein the SiC source housing is disposed at a lower portion of the apparatus,
the substrate support, wherein the substrate support is arranged above the SiC source housing and supports a substrate so as to face the SiC source housing,
the heat-insulating shield member which is arranged and used between the SiC source housing and the substrate support, and
a supporting rod which supports a center of the heat-insulating shield member from a lower side,
wherein the single crystal manufacturing apparatus is configured to grow a single crystal from a SiC source on the substrate by sublimating the SiC source from the SiC source housing,
wherein the heat-insulating shield member contains a low thermally conductive carbon material having thermal conductivity lower than graphite,
the low thermally conductive carbon material consists of carbon,
a diameter of the heat-insulating shield member is smaller than an inner diameter of the crystal growth container, and
the heat-insulating shield member is made of a heat-insulating material having thermal conductivity of 1 to 3.25 W/m·K in at least a thickness direction at room temperature.
2. The heat-insulating shield member according to claim 1 , wherein the low thermally conductive carbon material is either a carbon fiber material or expanded graphite.
3. The heat-insulating shield member according to claim 1 , wherein the low thermally conductive carbon material is a graphite material having thermal anisotropy.
4. The heat-insulating shield member according to claim 1 , wherein the heat-insulating shield member has a structure in which a heat-insulating material is surrounded by a graphite material.
5. The heat-insulating shield member according to claim 1 , wherein the heat-insulating shield member has a surface which is coated by a metal carbide layer.
6. A single crystal manufacturing apparatus comprising:
a crystal growth container and
a heating member arranged on an outer periphery of the crystal growth container,
wherein the crystal growth container includes
a SiC source housing disposed at a lower portion of the apparatus,
a substrate support which is arranged above the SiC source housing and supports a substrate so as to face the SiC source housing,
a heat-insulating shield member which is arranged and used between the SiC source housing and the substrate support, and
a supporting rod which supports a center of the heat-insulating shield member from a lower side,
wherein the heat-insulating shield member contains a low thermally conductive carbon material having thermal conductivity lower than graphite,
wherein the low thermally conductive carbon material consists of carbon, and a diameter of the heat-insulating shield member is smaller than an inner diameter of the crystal growth container,
wherein the single crystal manufacturing apparatus is configured to grow a single crystal from a SiC source on the substrate by sublimating the SiC source from the SiC source housing, and
the heat-insulating shield member is made of a heat-insulating material having thermal conductivity of 1 to 3.25 W/m·K in at least a thickness direction at room temperature.
7. The heat-insulating shield member according to claim 1 , wherein
the heat-insulating shield member is made of the low thermally conductive carbon material.
8. The heat-insulating shield member according to claim 1 , wherein the heat-insulating shield member is made of porous carbon.
9. The heat-insulating shield member according to claim 1 , wherein the heat-insulating shield member is made of a graphite material in which thermal conductivity thereof is anisotropic in the thickness direction and a direction orthogonal to the thickness direction, and is formed by pressing expanded graphite into a compacted sheet shape.
10. The single crystal manufacturing apparatus according to claim 6 , wherein
the heat-insulating shield member is arranged between the SiC source housing and the substrate support in a single crystal manufacturing apparatus.
11. The single crystal manufacturing apparatus according to claim 6 , wherein
the heat-insulating shield member is made of the low thermally conductive carbon material.
12. The single crystal manufacturing apparatus according to claim 6 , wherein
the heat-insulating shield member is made of porous carbon.
13. The single crystal manufacturing apparatus according to claim 6 , wherein
the heat-insulating shield member is made of a graphite material in which thermal conductivity thereof is anisotropic in the thickness direction and a direction orthogonal to the thickness direction, and is formed by pressing expanded graphite into a compacted sheet shape.
14. The heat-insulating shield member according to claim 1 , wherein the heat-insulating shield member has a circular flat plate shape, and the crystal growth container has a columnar crucible shape.
15. The heat-insulating shield member according to claim 1 , wherein the heat-insulating shield member consists of the low thermally conductive carbon material.
16. The single crystal manufacturing apparatus according to claim 6 , wherein the heat-insulating shield member has a circular flat plate shape, and the crystal growth container has a columnar crucible shape.
17. The single crystal manufacturing apparatus according to claim 6 , wherein the heat-insulating shield member consists of the low thermally conductive carbon material.
18. The single crystal manufacturing apparatus according to claim 6 , wherein the heat-insulating shield member satisfies at least one selected from the following characteristics (i) to (iv):
(i) the low thermally conductive carbon material consists of a carbon fiber material,
(ii) the low thermally conductive carbon material consists of expanded graphite,
(iii) the low thermally conductive carbon material consists of a graphite material having thermal anisotropy,
(iv) the heat-insulating shield member has a structure in which a heat-insulating material is surrounded by a graphite material, and
(v) the heat-insulating shield member has a surface which is coated by a metal carbide layer.
19. The heat-insulating shield member according to claim 1 , wherein the thermal conductivity of the heat-insulating shield member in the thickness direction is smaller than the thermal conductivity of the heat-insulating shield member in the plane direction.
20. The single crystal manufacturing apparatus according to claim 6 , wherein the thermal conductivity of the heat-insulating shield member in the thickness direction is smaller than the thermal conductivity of the heat-insulating shield member in the plane direction.