Systems and devices for molecule sensing and method of manufacturing thereof
View Patent ↗Embodiments of the disclosure are directed to a device for molecule sensing. In some embodiments, the device includes a first electrode separated from a second electrode by a dielectric layer. The first electrode comprises a large area electrode and the second electrode comprises a small area electrode. At least one opening (e.g., trench) cut or otherwise created into the dielectric layer exposes a tunnel junction therebetween whereby target molecules in solution can bind across the tunnel junction.
1. A method for manufacturing a device for detecting one or more target molecules, the method comprising:
depositing a first bottom electrode onto a solid supporting layer wherein the first electrode includes a first area;
depositing a dielectric layer over the first electrode;
depositing a second top electrode over the dielectric layer, wherein the second electrode includes a second area which is substantially less than the first area; and
cutting or etching at least one trench through at least the second electrode and the dielectric layer, such that the bottom of the trench exposes the first electrode and exposes a tunnel junction between the first and second electrodes.
2. The method of claim 1 , further comprising depositing at least one adhesion layer arranged beneath at least one of the first and second electrodes.
3. The method of claim 1 , wherein the dielectric layer is deposited such that it covers substantially all of the first electrode except for a contact area for the first electrode, the contact area configured for connection to a contact pad at the edge of the device.
4. The method of claim 1 , further comprising depositing a passivating layer between about 20 nm and about 500 nm covering a substantial portion of the surface of at least one of the electrodes.
5. The method of claim device according to claim 4 , further comprising establishing at least one opening in the passivating layer arranged to correspond to the at least one trench.
6. The method of claim 1 , wherein the at least one trench comprises a plurality of trenches.
7. The method of claim 1 , wherein the second electrode is arranged in a cross or “T” configuration relative to the first electrode so as to separate one or more junctions therebetween.
8. The method according to claim 6 , wherein the plurality of trenches comprise a first trench and a second trench, wherein a longitudinal axis of the first trench is at an angle to the longitudinal axis of the second trench.
9. The method of claim 1 , wherein the second electrode is substantially smaller than the first electrode.
10. The method of claim 1 , wherein the at least one trench is established using reactive ions.
11. The method of claim 1 , wherein the at least one trench is established using a focused beam of He ions or low-energy argon ions.
12. A method for manufacturing a device for identifying one or more target molecules comprising:
depositing a first bottom electrode onto a solid supporting layer, wherein the first electrode includes a first area;
depositing a dielectric layer over the first electrode;
depositing a second top electrode over the dielectric layer, wherein the second electrode includes a second area which is substantially less than the first area;
establishing at least one trench through at least the second electrode and the dielectric layer, such that the bottom of the trench exposes a tunnel junction between the first and second electrodes;
substantially covering the device with a first passivating layer; and
establishing an opening in the passivating layer adjacent the at least one trench.
13. The method of claim 12 , wherein the opening in the first passivating layer comprises ion-etching using a mask, wherein the mask covers comprise at least one of Ta and Ni, in a layer between about 10 nm and about 500 nm provided over the first passivating layer.
14. The method of claim 13 , further comprising depositing a second passivating layer over the mask.
15. The method of claim 14 , wherein exposing an opening in the second passivating layer via optical lithography to expose the mask.
16. The method of claim 15 , further comprising etching the mask to remove an area of the mask corresponding to the opening in the second passivating layer.
17. The method of claim 16 , wherein etching is accomplishing using at least one of a nitric, acetic, and sulfuric acid, and/or a ferric chloride solution.
18. The method of claim 16 , wherein the first passivating layer is removed using an argon plasma or a solvent.
19. The method of claim 12 , further comprising exposing the assembly to chlorine ions to etch the second electrode to expose the dielectric layer, and thereafter, etching the dielectric layer by exposing the dielectric layer to boron trichloride ions.
20. A method for identifying one or more target molecules comprising:
providing a device comprising a first bottom electrode having a first thickness, the first electrode deposited onto a solid supporting layer,
a dielectric layer substantially covering the first electrode;
a second top electrode having a second thickness, the second electrode being separated from the first electrode by the dielectric layer, wherein the surface area of the second electrode is less than the surface area of the first electrode;
and
at least one trench cut or etched through at least the second electrode and dielectric layer such that at least the bottom of the opening exposes the first electrode, the trench configured to expose a tunnel junction between the electrodes to facilitate communication of one or more target molecules with the first and second electrodes;
functionalizing at least a portion of at least one of the electrodes with first molecules, the first molecules configured for forming non-covalent bonds with one or more target molecules;
flowing a solution containing one or more target molecules past the electrodes; and
detecting the one or more target molecules upon the one or more target molecules forming a non-covalent bond with the first molecules.