IP Library Granted Patent US 10,930,701
Granted Patent B2
US 10,930,701 · App. 16/390,899 · Granted Feb 23, 2021

Light-emitting element having a plurality of light-emitting structures

Inventors: Chen Ou (Hsinchu, TW); Chun-Wei Chang (Hsinchu, TW); Chih-Wei Wu (Hsinchu, TW); Sheng-Chih Wang (Hsinchu, TW); Hsin-Mei Tsai (Hsinchu, TW); Chia-Chen Tsai (Hsinchu, TW); Chuan-Cheng Chang (Hsinchu, TW)
Assignee: EPISTAR CORPORATION
H01L27/15H01L33/08H01L33/20H01L33/38
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Quick Facts
Patent No.
US 10,930,701
App. No.
16/390,899
Granted
Feb 23, 2021
Kind
B2
Abstract

A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.

Claims (22)

1. A light-emitting device, comprising:

a first semiconductor layer having an uppermost surface and a bottommost surface opposite to the uppermost surface;

a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous, wherein each of the first light emitting structure and the second light emitting structure comprises an active layer on the first semiconductor layer and a second semiconductor layer on the active layer;

a first trench formed between the first light-emitting structure and the second light-emitting structure, comprising a bottom portion exposing a first surface of the first semiconductor layer;

a first electrode formed on and electrically connecting to the first semiconductor layer; and

a second electrode formed on the first light-emitting structure and the second light-emitting structure, electrically connecting the second semiconductor layer of each of the first light-emitting structure and the second light-emitting structure and comprising a second pad and a plurality of second extending parts extending from the second pad;

wherein the second pad is formed between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first light-emitting structure and the second light-emitting structure, respectively;

wherein the first trench passes through the uppermost surface of the first semiconductor layer but does not extend to the bottommost surface of the first semiconductor layer;

wherein a width of entire of the first trench between the first light-emitting structure and the second light-emitting structure is consistent; and

wherein the first electrode is not formed in the first trench.

2. The light-emitting device of claim 1 , further comprising an exposing part surrounding the first light emitting structure and the second light emitting structure.

3. The light-emitting device of claim 1 , wherein the first trench is devoid of the second extending part formed therein.

4. The light-emitting device of claim 1 , wherein in the top view, the first electrode comprises an extending direction parallel to the first trench.

5. The light-emitting device of claim 1 , further comprising a third light-emitting structure and a fourth light-emitting structure formed on the first semiconductor layer, wherein a third trench is formed between the third light-emitting structure and the fourth light-emitting structure.

6. The light-emitting device of claim 1 , further comprising a first bridging part between the first light-emitting structure and the second light-emitting structure, and the second pad is formed on the first bridging part.

7. The light-emitting device of claim 5 , further comprising a second bridging part between the first light-emitting structure and the third light-emitting structure.

8. The light-emitting device of claim 7 , further comprising a third bridging part between the second light-emitting structure and the fourth light-emitting structure.

9. The light-emitting device of claim 5 , wherein the plurality of second extending parts extend on the third light-emitting structure and the fourth light-emitting structure, respectively.

10. The light-emitting device of claim 1 , wherein each of the first light emitting structure and the second light emitting structure further comprises:

a transparent conductive layer on the second semiconductor layer.

11. The light-emitting device of claim 1 , wherein the first light-emitting structure and the second light-emitting structure comprise a same pattern from the top view.

12. The light-emitting device of claim 1 , wherein the first electrode comprises a first pad and a first extending part.

Assignments (2)
CHANGE OF NAME Recorded Feb 26, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075152/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 23, 2019
From: OU, CHEN; CHANG, CHUN-WEI; WU, CHIH-WEI; WANG, SHENG-CHIH; TSAI, HSIN-MEI; TSAI, CHIA-CHEN; CHANG, CHUAN-CHENG
To: EPISTAR CORPORATION
Reel/Frame 048970/0827 →
Priority Claims (1)
TW 102130742 · Aug 27, 2013 · national
Continuity (3)
Division 15675351 · Aug 11, 2017
Continuation 14470396 · Aug 27, 2014
Related Publication 20190252459A1 · Aug 15, 2019