LONG CHANNELS FOR TRANSISTORS
A semiconductor device includes a first nanosheet stack, a second nanosheet stack, and a third nanosheet stack arranged on a substrate. The semiconductor device includes a gate arranged on the first nanosheet stack, the second nanosheet stack, and the third nanosheet stack. The semiconductor device includes a channel extending through the gate and from the first nanosheet stack, the second nanosheet stack, and to the third nanosheet stack in a serpentine fashion. The semiconductor device includes a first source/drain and a second source/drain arranged on opposing sides of the gate.
1 . A semiconductor device, comprising:
a first nanosheet stack, a second nanosheet stack, and a third nanosheet stack arranged on a substrate;
a gate arranged on the first nanosheet stack, the second nanosheet stack, and the third nanosheet stack;
a channel extending through the gate and from the first nanosheet stack, the second nanosheet stack, and to the third nanosheet stack in a serpentine fashion; and
a first source/drain and a second source/drain arranged on opposing sides of the gate.
2 . The semiconductor device of claim 1 , wherein the channel extends through the gate in three areas.
3 . The semiconductor device of claim 1 , wherein the first nanosheet stack and the second nanosheet stack are coupled on one side of the gate.
4 . The semiconductor device of claim 3 , wherein the second nanosheet stack and the third nanosheet stack are coupled on another side of the gate.
5 . The semiconductor device of claim 1 , wherein the first nanosheet stack and the second nanosheet stack are coupled by overlapping epitaxial growth.
6 . The semiconductor device of claim 5 , wherein the second nanosheet stack and the third nanosheet stack are coupled by overlapping epitaxial growth.
7 . The semiconductor device of claim 1 , wherein the first nanosheet stack and the second nanosheet stack are coupled by a metal-filled trench.
8 . The semiconductor device of claim 7 , wherein the second nanosheet stack and the third nanosheet stack are coupled by a metal-filled trench.
9 . The semiconductor device of claim 1 , wherein the first nanosheet stack, the second nanosheet stack, and the third nanosheet stack each comprise an epitaxial growth.
10 . A semiconductor device, comprising:
a first nanosheet stack, a second nanosheet stack, and a third nanosheet stack arranged on a substrate;
a gate arranged on the first nanosheet stack, the second nanosheet stack, and the third nanosheet stack;
a channel extending through the gate and from the first nanosheet stack, the second nanosheet stack, and to the third nanosheet stack in a serpentine fashion, the channel comprising a length greater than 100 nanometers (nm); and
a first source/drain and a second source/drain arranged on opposing sides of the gate.
11 . The semiconductor device of claim 10 , wherein the channel extends through the gate in three areas.
12 . The semiconductor device of claim 10 , wherein the first nanosheet stack and the second nanosheet stack are coupled on one side of the gate.
13 . The semiconductor device of claim 12 , wherein the second nanosheet stack and the third nanosheet stack are coupled on another side of the gate.
14 . The semiconductor device of claim 12 , wherein the first nanosheet stack and the second nanosheet stack are coupled by overlapping epitaxial growth.
15 . The semiconductor device of claim 14 , wherein the second nanosheet stack and the third nanosheet stack are coupled by overlapping epitaxial growth.
16 . The semiconductor device of claim 10 , wherein the first nanosheet stack and the second nanosheet stack are coupled by a metal-filled trench.
17 . The semiconductor device of claim 16 , wherein the second nanosheet stack and the third nanosheet stack are coupled by a metal-filled trench.
18 . The semiconductor device of claim 10 , wherein the first nanosheet stack, the second nanosheet stack, and the third nanosheet stack each comprise an epitaxial growth.
19 . A semiconductor device, comprising:
a first nanosheet stack, a second nanosheet stack, and a third nanosheet stack arranged on a substrate; and
a channel extending through the gate and from the first nanosheet stack, the second nanosheet stack, and to the third nanosheet stack in a serpentine fashion.
20 . The semiconductor device of claim 19 , wherein the channel extends through the gate in three areas.