Methods and structures for forming uniform fins when using hardmask patterns
A method for manufacturing a semiconductor device includes forming a hardmask layer on a substrate, patterning the hardmask layer to form a plurality of patterned hardmask portions on the substrate, depositing a dummy hardmask layer on the substrate, patterning the dummy hardmask layer to form a plurality of patterned dummy hardmask portions on the substrate, wherein each of the plurality of patterned dummy hardmask portions is positioned adjacent respective outermost patterned hardmask portions of the plurality of patterned hardmask portions, and transferring a pattern of the plurality of patterned hardmask portions and the plurality of patterned dummy hardmask portions to the substrate to form a plurality of fins and a plurality of dummy fins from the substrate.
1. A semiconductor device comprising:
a plurality of fins on a substrate, wherein each of the plurality of fins has the same or substantially the same critical dimension in an active fin region;
a dielectric layer formed on the substrate and on and around each of the plurality of fins in a region below the active fin region; and
a plurality of dummy fins formed on the substrate;
wherein each of the plurality of dummy fins is positioned adjacent respective outermost fins of the plurality of fins, and is covered by the dielectric layer in the region below the active fin region; and
wherein the respective outermost fins each comprise a different critical dimension from an adjacent inner fin in the region below the active fin region.
2. The semiconductor device according to claim 1 , wherein a height of each of the plurality of dummy fins is less than a height of the dielectric layer.
3. The semiconductor device according to claim 1 , wherein a critical dimension of each of the plurality of dummy fins is less than the critical dimensions of each of the plurality of fins in the active fin region.
4. The semiconductor device according to claim 1 , wherein a critical dimension of each of the plurality of dummy fins is less than the critical dimensions of each of the plurality of fins in the region below the active fin region.
5. The semiconductor device according to claim 1 , wherein a critical dimension of each of the respective outermost fins of the plurality of fins in the active fin region is different than a critical dimension of each of the respective outermost fins of the plurality of fins in the region below the active fin region.
6. The semiconductor device according to claim 5 , wherein the critical dimension of each of the respective outermost fins of the plurality of fins in the active fin region is less than the critical dimension of each of the respective outermost fins of the plurality of fins in the region below the active fin region.
7. The semiconductor device according to claim 5 , wherein the adjacent inner fin is positioned between the respective outermost fins of the plurality of fins and has the same critical dimension in the active fin region and in the region below the active fin region.
8. The semiconductor device according to claim 1 , further comprising a gate structure disposed on and around the plurality of fins.
9. The semiconductor device according to claim 8 , wherein the gate structure is disposed on the dielectric layer.
10. The semiconductor device according to claim 8 , wherein the gate structure comprises a dielectric layer and at least one conductive material.
11. A semiconductor device comprising:
a plurality of fins on a substrate, wherein each of the plurality of tins has the same or substantially the same critical dimension in an active fin region;
a dielectric layer formed on the substrate and on and around each of the plurality of fins in a region below the active fin region; and
a plurality of dummy fins formed on the substrate;
wherein each of the plurality of dummy fins is positioned adjacent respective outermost fins of the plurality of fins, and is covered by the dielectric layer in the region below the active fin region; and
wherein a critical dimension of each of the respective outermost fins of the plurality of fins in the active fin region is different than a critical dimension of each of the respective outermost fins of the plurality of fins in the region below the active fin region.
12. The semiconductor device according to claim 11 , wherein a height of each of the plurality of dummy fins is less than a height of the dielectric layer.
13. The semiconductor device according to claim 11 , wherein a critical dimension of each of the plurality of dummy fins is less than the critical dimensions of each of the plurality of fins in the active fin region.
14. The semiconductor device according to claim 11 , wherein a critical dimension of each of the plurality of dummy fins is less than critical dimensions of each of the plurality of fins in the region below the active fin region.
15. The semiconductor device according to claim 11 , wherein the critical dimension of each of the respective outermost fins of the plurality of fins in the active fin region is less than the critical dimension of each of the respective outermost fins of the plurality of fins in the region below the active fin region.
16. The semiconductor device according to claim 11 , wherein a fin of the plurality fins positioned between the respective outermost fins of the plurality of fins has the same critical dimension in the active fin region and in the region below the active fin region.
17. The semiconductor device according to claim 11 , further comprising a gate structure disposed on and around the plurality of fins.
18. The semiconductor device according to claim 17 , wherein the gate structure is disposed on the dielectric layer.
19. The semiconductor device according to claim 17 , wherein the gate structure comprises a dielectric layer and at least one conductive material.
20. The semiconductor device according to claim 11 , wherein the respective outermost fins each comprise a greater critical dimension than a critical dimension of an adjacent inner fin in the region below the active fin region.