Reducing RRAM relaxation in crossbar arrays for low current applications
View Patent ↗Systems and methods for reducing RRAM relaxation in crossbar array circuits for low current applications are provided. In some implementations, an apparatus comprises: a first row wire; a first column wire; an RRAM device; an access control device, wherein the RRAM device and the access control device serially connected and connecting between the first row wire and the first column wire, and wherein the RRAM device comprises: a first electrode; a first switching layer formed on the first electrode; and a second electrode formed on the first switching layer, wherein the first switching layer is doped with a first oxide material comprising SiO 2 , or Al 2 O 3 . The first electrode and the second electrode are, in some implementations, made of one of the following materials: Pt, Pd, Ta, Ti, Hf, W, TiN, and TaN.
1. An apparatus comprising:
a first row wire;
a first column wire;
an RRAM device;
an access control device, wherein the RRAM device and the access control device serially connected and connecting between the first row wire and the first column wire, and wherein the RRAM device comprises:
a first electrode;
a first switching layer formed on the first electrode, wherein a material of the first switching layer comprises ZrO 2 , HfO 2 , TiO 2 , or Ta 2 O 5 ;
a second electrode formed on the first switching layer, wherein the first switching layer is doped with a first oxide material comprising SiO 2 , or Al 2 O 3 ; and
a first thin layer formed between the first electrode and the first switching layer, and the first thin layer is made of one of the following materials: ZrSi x O y , HfSi x O y , TaSi x O y , and TiSi x O y , wherein the material of the first thin layer has thermodynamically stable ternary phase and the first thin layer has a lower dielectric constant than that of the first switching laver.
2. The apparatus as claimed in claim 1 , further comprising:
a second switching layer formed between the first switching layer and the second electrode, wherein the second switching layer is made of one of the following materials: CeO x , HfO x , TaO x , and TiO x .
3. The apparatus as claimed in claim 2 , wherein the second switching layer is doped with a second oxide material comprising SiO 2 , or Al 2 O 3 .
4. The apparatus as claimed in claim 3 , wherein the RRAM device further comprises:
a second thin layer formed between the second electrode and the second switching layer, and the second thin layer is made of one of the following materials: ZrSi x O y , HfSi x O y , TaSi x O y , and TiSi x O y , wherein the material of the second thin layer has thermodynamically stable ternary phase and the second thin layer has a lower dielectric constant than that of the second switching layer.
5. The apparatus as claimed in claim 3 , wherein the RRAM device further comprises:
a third thin layer formed between the first switching layer and the second switching layer, and the third thin layer is made of one of the following materials: ZrSi x O y , HfSi x O y , TaSi x O y , and TiSi x O y , wherein the material of the third thin layer has thermodynamically stable ternary phase and the third thin layer has a lower dielectric constant than that of the first switching layer and the second switching layer.
6. The apparatus as claimed in claim 1 , further comprising:
an interlayer formed between the first switching layer and the second electrode; wherein a material of the interlayer comprises SiO 2 , Al 2 O 3 or Si.
7. The apparatus as claimed in claim 6 , wherein the RRAM device further comprises:
a fourth thin layer formed between the first switching layer and the interlayer, and the fourth thin layer is made of one of the following materials: ZrSi x O y , HfSi x O y , TaSi x O y , and TiSi x O y , wherein the material of the fourth thin layer has thermodynamically stable ternary phase and the fourth thin layer has a lower dielectric constant than that of the first switching layer.
8. The apparatus as claimed in claim 1 , wherein the access control device comprises a transistor or a selector.
9. The apparatus as claimed in claim 1 , wherein the first electrode is made of one of the following materials: Pt, Pd, Ta, Ti, Hf, W, TiN, and TaN.
10. The apparatus as claimed in claim 1 , wherein the second electrode is made of one of the following materials: Pt, Pd, Ta, Ti, Hf, W, TiN, and TaN.
11. The apparatus as claimed in claim 1 , wherein the first thin layer is made of one of the following materials: ZrSiO 4 , HfSiO 4 , TaSiO 4 , and TiSiO 4 .
12. An apparatus comprising:
a first row wire; a first column wire; an RRAM device;
an access control device, wherein the RRAM device and the access control device serially connected and connecting between the first row wire and the first column wire, and wherein the RRAM device comprises:
a first electrode;
a first switching layer formed on the first electrode;
a second electrode formed on the first switching layer; and
a thin layer formed between the first electrode and the first switching layer, wherein the first switching layer is made of one of the following materials: ZrO 2 and Ta 2 O 5 ; and
the thin layer is made of one of the following materials: ZrSiO 4 and TaSiO 4 .
13. An apparatus comprising:
a first row wire;
a first column wire;
an RRAM device;
an access control device, wherein the RRAM device and the access control device serially connected and connecting between the first row wire and the first column wire, and wherein the RRAM device comprises:
a first electrode;
a first switching layer formed on the first electrode;
a second switching layer formed on the first switching layer;
a second electrode formed on the second switching layer; and
a thin layer formed between the first switching layer and the second switching layer,
wherein the first switching layer is made of one of the following materials: ZrO 2 , and Ta 2 O 5 ;
the second switching layer is made of one of the following materials: CeO x , HfO x , TaO x , and TiO x ; and
the thin layer is made of one of the following materials: ZrSiO 4 and TaSiO 4 .