Display substrate, method of manufacturing the same, and display device

1. A display substrate comprising:

a base substrate comprising an emission area and a transmission area;

an electroluminescent device on the base substrate, the electroluminescent device comprising a first electrode in the emission area;

a thin film transistor for controlling the electroluminescent device, the thin film transistor comprising an active layer; and

a conductive member on the base substrate,

wherein the conductive member electrically connects the first electrode of the electroluminescent device with the active layer, the conductive member comprises a contact portion in contact with the active layer, and the contact portion is located in the transmission area, and

wherein the active layer comprises a channel portion, a first conductor portion and a second conductor portion, the first conductor portion and the second conductor portion are respectively positioned on opposite sides of the channel portion, an orthographic projection of each of the first conductor portion and the channel portion on the base substrate falls into the emission area, and an orthographic projection of a part of the second conductor portion proximal to the channel portion on the base substrate falls into the emission area, an orthographic projection of a part of the second conductor portion distal to the channel portion on the base substrate falls into the transmission area, and the conductive member is in contact with the part of the second conductor portion distal to the channel portion.

2. The display substrate of claim 1 , further comprising a pixel defining structure, wherein the pixel defining structure covers the contact portion.

3. The display substrate of claim 2 , wherein the electroluminescent device further comprises:

a light-emitting layer on a side of the first electrode away from the base substrate; and

a second electrode on a side of the light-emitting layer away from the first electrode,

wherein the conductive member comprises a conductive layer between the first electrode and the light-emitting layer.

4. The display substrate of claim 3 , wherein an orthographic projection of at least one of the light-emitting layer and the second electrode on the base substrate covers an orthographic projection of the conductive member on the base substrate.

5. The display substrate of claim 3 , wherein an orthographic projection of at least one of the light-emitting layer and the second electrode on the base substrate covers both the emission area and the transmission area.

6. The display substrate of claim 3 , wherein an orthographic projection of at least one of the light-emitting layer and the second electrode on the base substrate covers an orthographic projection of the pixel defining structure on the base substrate.

7. The display substrate of claim 1 , wherein an orthographic projection of the conductive member on the base substrate covers an orthographic projection of each of the first electrode and the thin film transistor on the base substrate.

8. The display substrate of claim 1 , wherein the thin film transistor further comprises:

a gate insulating layer on a side of the active layer away from the base substrate;

a gate electrode on a side of the gate insulating layer away from the active layer;

an interlayer dielectric layer on a side of the gate electrode away from the gate insulating layer; and

a source electrode located on a side of the interlayer dielectric layer away from the gate electrode and electrically connected to the first conductor portion of the active layer,

wherein an orthographic projection of each of the gate insulating layer, the gate electrode, the interlayer dielectric layer and the source electrode on the base substrate falls outside the transmission area.

9. The display substrate of claim 8 , wherein the display substrate further comprises an insulating layer between the source electrode and the first electrode, wherein an orthographic projection of the insulating layer on the base substrate falls outside the transmission area.

10. The display substrate of claim 9 , wherein an area of an overlapped region between the orthographic projection of the insulating layer on the base substrate and an orthographic projection of a pixel defining layer on the base substrate is smaller than an area of an overlapped region between an orthographic projection of the interlayer dielectric layer on the base substrate and the orthographic projection of the pixel defining layer on the base substrate, and the area of the overlapped region between the orthographic projection of the interlayer dielectric layer on the base substrate and the orthographic projection of the pixel defining layer on the base substrate is smaller than an area of an overlapped region between an orthographic projection of the active layer on the base substrate and the orthographic projection of the pixel defining layer on the base substrate.

11. The display substrate of claim 8 , further comprising a capacitor electrode, wherein the capacitor electrode is located in the same layer as the source electrode and spaced apart from the source electrode, and an orthographic projection of the capacitor electrode on the base substrate overlaps an orthographic projection of the second conductor portion on the base substrate.

12. The display substrate of claim 1 , wherein the conductive member comprises transparent conductive material.

13. The display substrate of claim 1 , further comprising a buffer layer between the base substrate and the active layer, wherein an orthographic projection of the buffer layer on the base substrate covers both the emission area and the transmission area.

14. A display device comprising the display substrate of claim 1 .

15. A method of manufacturing a display substrate comprising:

providing a base substrate comprising an emission area and a transmission area;

forming a thin film transistor on the base substrate, the thin film transistor comprising an active layer;

forming a first electrode of an electroluminescent device in the emission area and on a side of the thin film transistor away from the base substrate; and

forming a conductive member on the base substrate in such a way that the conductive member electrically connects the first electrode of the electroluminescent device with the active layer,

wherein the conductive member comprises a contact portion in contact with the active layer, and the contact portion is located in the transmission area

wherein forming the thin film transistor on the base substrate comprises: forming the active layer of the thin film transistor on the base substrate, and

wherein the active layer comprises a channel portion, a first conductor portion and a second conductor portion, the first conductor portion and the second conductor portion positioned on opposite sides of the channel portion, an orthographic projection of each of the first conductor portion and the channel portion on the base substrate falls into the emission area, and an orthographic projection of a part of the second conductor portion proximal to the channel portion on the base substrate falls into the emission area, an orthographic projection of a part of the second conductor portion distal to the channel portion on the base substrate falls into the transmission area, and the conductive member is in contact with the part of the second conductor portion distal to the channel portion.

16. The method of claim 15 , further comprising: forming a pixel defining structure on the base substrate in such a way that the pixel defining structure covers the contact portion.

17. The method of claim 15 , further comprising:

forming a light-emitting layer on a side of the conductive member away from the base substrate; and

forming a second electrode on a side of the light-emitting layer away from the first electrode,

wherein an orthographic projection of at least one of the light-emitting layer and the second electrode on the base substrate covers both the emission area and the transmission area.

18. The method of claim 15 , wherein forming the thin film transistor on the base substrate further comprises:

forming a gate insulating layer on a side of the active layer away from the base substrate;

forming a gate electrode on a side of the gate insulating layer away from the active layer;

forming an interlayer dielectric layer on a side of the gate electrode away from the gate insulating layer; and

depositing a metal layer on a side of the interlayer dielectric layer away from the gate electrode, and forming a source electrode and a capacitor electrode through a patterning process,

wherein an orthographic projection of each of the gate insulating layer, the gate electrode, the interlayer dielectric layer, the source electrode and the capacitor electrode on the base substrate falls outside the transmission area.