Method for creating a dielectric filled nanostructured silica substrate for flat optical devices

1. A method for creating a flat optical structure, comprising:

etching a first trench in a substrate, the first trench spaced from a second trench by a separation distance;

placing a dielectric material in the first trench in the substrate; and

encapsulating a top of the substrate with a film, the film having a refractive index lower than a refractive index of the dielectric material;

wherein lateral dimensions of the first and second trenches are varied from a first magnitude to a second larger magnitude so that a normalized phase change of a selected light wavelength through the dielectric material is equal to one at the first magnitude of the lateral dimension and zero at the second magnitude of the lateral dimension.

2. The method according to claim 1 , wherein a width of the first trench is a maximum of one half a wavelength of operation of the flat optical structure.

3. The method according to claim 2 , wherein the substrate is made of silicon dioxide.

4. The method according to claim 2 , wherein placing the dielectric material in the first trench in the substrate is through one of a spinning process, a chemical vapor deposition and a material deposition process.

5. The method according to claim 2 , wherein encapsulating the top of the substrate with the film is through use of a SiO2 film.

6. The method according to claim 2 , wherein the placing the dielectric material in the first trench in the substrate includes providing an overfill dielectric layer.

7. The method of claim 1 , comprising:

wherein the substrate has at least one flat surface, wherein the substrate is a silicon dioxide substrate, wherein the dielectric material is placed in the first trench in the at least one flat surface of the silicon dioxide substrate, and wherein the encapsulating includes encapsulating the dielectric material in the first trench in the at least one flat surface of the silicon dioxide substrate with the film.

8. The method according to claim 7 , wherein the encapsulating is performed using a spin-on process.

9. The method according to claim 8 , wherein the spin-on process uses one of titanium dioxide, GaP, aSi, cSi and Si3N4.

10. The method according to claim 8 , wherein the dielectric material has a refractive index greater than 1.8 and absorption coefficient less than 0.01.

11. A method for creating a flat optical structure, comprising:

depositing a first material on to a first face of a substrate, the first material having a refractive index greater than a refractive index of the substrate;

etching at least one trench in the first material, thereby creating a pillar of the first material, the pillar including a square cross-sectional shape in a plan view; and

encapsulating each side and a top of the pillar with a second material.

12. The method according to claim 11 , wherein a width of the at least one trench is a maximum of one half a wavelength of operation of the flat optical structure.

13. The method according to claim 12 , wherein the substrate is made of SiO2.

14. The method according to claim 12 , wherein the second material is SiO2.

15. The method according to claim 12 , wherein the second material has a refractive index lower than the refractive index of the first material.