Resin composition and method of forming resist pattern
A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.
1. A method of forming a resist pattern, comprising:
applying a photoresist composition on a substrate to form a resist film on the substrate;
applying a resin composition on the resist film to form a liquid immersion upper layer film on the resist film;
performing liquid immersion exposure on the resist film on which the liquid immersion upper layer film is formed; and
developing the resist film after the liquid immersion exposure,
wherein the resin composition comprises:
a resin A that comprises a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A, the resin A having a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A;
a resin C that comprises a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A; and
a solvent,
wherein a content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass, and
wherein a content of the resin A in a total mass of resin solid components of the resin composition is 0.1 mass % or more and less than 5 mass %.
2. The method according to claim 1 , wherein a content of the resin C in the total mass of resin solid components of the resin composition is 10 mass % or more and 98 mass % or less.
3. The method according to claim 1 , wherein
an amount of a fluorine atom in the resin A with respect to a total mass of the resin A is 0 mass % or more and less than 30 mass %, and
an amount of a fluorine atom in the resin C with respect to a total mass of the resin C exceeds 40 mass %.
4. The method according to claim 3 , wherein the resin A does not contain a fluorine atom.
5. The method according to claim 1 , wherein the resin composition further comprises a resin B that comprises a sulfonic-acid-group-containing structural unit in an amount exceeding 0 mol % and being 5 mol % or less with respect to total structural units included in the resin B, the resin B having a content of a fluorine atom per unit mass smaller than the content of a fluorine atom per unit mass in the resin C.
6. The method according to claim 5 , wherein the sulfonic-acid-group-containing structural unit in one or both of the resin A and the resin B is represented by formula (1):
wherein in the formula (1), Ra is a hydrogen atom or a methyl group, and Rb is a single bond or a divalent organic group.
7. The method according to claim 1 , wherein the resin C does not contain a sulfonic-acid-group-containing structural unit.
8. The method according to claim 1 , wherein the resin A further comprises a carboxyl-group-containing structural unit.
9. The method according to claim 1 , wherein a receding contact angle of a film formed from the resin composition, with respect to water, is 80° or more.
10. The method according to claim 1 , wherein the sulfonic-acid-group-containing structural unit in the resin A is represented by formula (1):
wherein in the formula (1), Ra is a hydrogen atom or a methyl group, and Rb is a single bond or a divalent organic group.
11. A method of forming a resist pattern, comprising:
applying a photoresist composition on a substrate to form a resist film on the substrate;
exposing the resist film; and
developing the exposed resist film with an alkali development liquid,
the method further comprising applying a resin composition on a surface of the resist film after the resist film is formed and before the exposed resist film is developed,
wherein the resin composition comprises:
a resin A that comprises a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A, the resin A having a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A;
a resin C that comprises a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A; and
a solvent,
wherein a content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass, and
wherein a content of the resin A in a total mass of resin solid components of the resin composition is 0.1 mass % or more and less than 5 mass %.
12. The method according to claim 11 , wherein the exposing of the resist film is carried out with an extreme ultraviolet ray.
13. The method according to claim 11 , wherein the photoresist composition comprises a fluorine-atom-containing polymer.
14. The method according to claim 11 , wherein a content of the resin C in the total mass of resin solid components of the resin composition is 10 mass % or more and 98 mass % or less.
15. The method according to claim 11 , wherein
an amount of a fluorine atom in the resin A with respect to a total mass of the resin A is 0 mass % or more and less than 30 mass %, and
an amount of a fluorine atom in the resin C with respect to a total mass of the resin C exceeds 40 mass %.
16. The method according to claim 15 , wherein the resin A does not contain a fluorine atom.
17. The method according to claim 11 , wherein the resin composition further comprises a resin B that comprises a sulfonic-acid-group-containing structural unit in an amount exceeding 0 mol % and being 5 mol % or less with respect to total structural units included in the resin B, the resin B having a content of a fluorine atom per unit mass smaller than the content of a fluorine atom per unit mass in the resin C.
18. The method according to claim 17 , wherein the sulfonic-acid-group-containing structural unit in one or both of the resin A and the resin B is represented by formula (1):
wherein in the formula (1), Ra is a hydrogen atom or a methyl group, and Rb is a single bond or a divalent organic group.
19. The method according to claim 11 , wherein the resin C does not contain a sulfonic-acid-group-containing structural unit.
20. The method according to claim 11 , wherein the resin A further comprises a carboxyl-group-containing structural unit.
21. The method according to claim 11 , wherein a receding contact angle of a film formed from the resin composition, with respect to water, is 80° or more.
22. The method according to claim 11 , wherein the sulfonic-acid-group-containing structural unit in the resin A is represented by formula (1):
wherein in the formula (1), Ra is a hydrogen atom or a methyl group, and Rb is a single bond or a divalent organic group.