Magnetic memory device with balancing synthetic anti-ferromagnetic layer
View Patent ↗In some embodiments, the present application provides a magnetic memory device. The magnetic memory device comprises a bottom electrode, and a first synthetic anti-ferromagnetic (SyAF) layer including a first pinning layer and a second pinning layer disposed over the bottom electrode and having opposite magnetization directions and separated by a first spacer layer. The magnetic memory device further comprises a reference layer disposed over the first pair of pinning layers and a free layer disposed over the reference layer and separated from the reference layer by a tunneling barrier layer. The magnetic memory device further comprises a second synthetic anti-ferromagnetic (SyAF) layer including a third pinning layer and a fourth pinning layer disposed over the free layer and having opposite magnetization directions and separated by a second spacer layer.
1. A magnetic memory device, comprising:
a bottom electrode;
a first synthetic anti-ferromagnetic (SyAF) layer including a first pinning layer and a second pinning layer disposed over the bottom electrode and having opposite magnetization directions and separated by a first spacer layer, with the second pinning layer being the one closer to the bottom electrode;
a reference layer disposed over the first SyAF layer;
a free layer disposed over the reference layer and separated from the reference layer by a tunneling barrier layer; and
a second synthetic anti-ferromagnetic (SyAF) layer including a third pinning layer and a fourth pinning layer disposed over the free layer and having opposite magnetization directions and separated by a second spacer layer, with the third pinning layer being the one closer to the free layer.
2. The magnetic memory device of claim 1 , wherein the third pinning layer has a magnetization direction aligned and anti-parallel with a magnetization direction of the reference layer.
3. The magnetic memory device of claim 2 , wherein the fourth pinning layer has a magnetization direction aligned and parallel with the magnetization direction of the reference layer.
4. The magnetic memory device of claim 1 , further comprising:
a first transition layer disposed between the reference layer and the first pinning layer; and
a second transition layer disposed between the free layer and the third pinning layer;
wherein the first transition layer and the second transition layer respectively comprises non-magnetic metals.
5. The magnetic memory device of claim 4 , wherein the first transition layer and the second transition layer respectively comprises tantalum (Ta), tungsten (W), molybdenum (Mo), Hafnium (Hf), or CoFeW.
6. The magnetic memory device of claim 1 , wherein the first spacer layer and the second spacer layer respectively comprises ruthenium (Ru) or iridium (Ir).
7. The magnetic memory device of claim 1 , wherein the first synthetic anti-ferromagnetic (SyAF) layer, the second synthetic anti-ferromagnetic (SyAF) layer, and the reference layer are configured to colletively generate a zero net stray field on the free layer.
8. The magnetic memory device of claim 1 , wherein the first synthetic anti-ferromagnetic (SyAF) layer and the second synthetic anti-ferromagnetic (SyAF) layer are configured to generate a net stray field that points in a magnetization direction of the reference layer.
9. A magnetic memory device, comprising:
a free layer;
a reference layer disposed on a first side of the free layer and separated from the free layer by a tunneling barrier layer; and
a balancing synthetic anti-ferromagnetic (SyAF) layer disposed on a second side of the free layer opposite to the first side, the balancing synthetic anti-ferromagnetic (SyAF) layer including a pair of pinning layers having opposite magnetization directions and separated by a spacer layer.
10. The magnetic memory device of claim 9 , wherein the magnetization directions of the pair of pinning layers are aligned with a magnetization direction of the reference layer.
11. The magnetic memory device of claim 9 , further comprising:
a first spacer layer disposed on one side of the reference layer opposite to the free layer; and
a first pinning layer disposed on one side of the first spacer layer opposite to the reference layer.
12. The magnetic memory device of claim 11 , wherein the first pinning layer, the balancing synthetic anti-ferromagnetic (SyAF) layer, and the reference layer are configured to collectively generate a zero net stray field on the free layer.
13. The magnetic memory device of claim 11 , wherein the first pinning layer, the balancing synthetic anti-ferromagnetic (SyAF) layer, and the free layer are configured to collectively generate a positive net stray field on the reference layer.
14. The magnetic memory device of claim 11 , wherein the first pinning layer has a magnetization direction aligned and anti-parallel with a magnetization direction of the reference layer.
15. The magnetic memory device of claim 11 , wherein the spacer layer and the first spacer layer respectively comprises ruthenium (Ru) or iridium (Ir).
16. The magnetic memory device of claim 9 , further comprising
a first synthetic anti-ferromagnetic (SyAF) layer disposed on the first side of the free layer and separated from the free layer by the reference layer;
wherein the first synthetic anti-ferromagnetic (SyAF) layer includes a first pinning layer and a second pinning layer having opposite magnetization directions and separated by a first spacer layer.
17. The magnetic memory device of claim 16 , further comprising a first transition layer disposed between the reference layer and the first pinning layer.
18. The magnetic memory device of claim 17 , further comprising:
a second transition layer disposed between the free layer and the balancing synthetic anti-ferromagnetic (SyAF) layer;
wherein the first transition layer and the second transition layer respectively comprises non-magnetic metals.
19. The magnetic memory device of claim 18 , wherein the first transition layer and the second transition layer respectively comprises tantalum (Ta), tungsten (W), molybdenum (Mo), afnium (Hf), niobium (Nb), or CoFeW.
20. An integrated circuit, comprising:
a semiconductor substrate;
an interconnect structure disposed over the semiconductor substrate, and including a plurality of dielectric layers and a plurality of metal layers stacked over one another, wherein the plurality of metal layers include a lower metal layer and an upper metal layer disposed over the lower metal layer;
a magnetoresistive random access memory (MRAM) cell arranged over the upper metal layer, the MRAM cell comprising:
a bottom electrode disposed over and in electrical contact with the lower metal layer;
a top electrode disposed under and in electrical contact with the upper metal layer;
a free layer and a reference layer disposed between the bottom electrode and the top electrode, stacked, and separated by a tunneling barrier layer;
a first pinning layer on one side of the reference layer opposite to the free layer; and
a balancing synthetic anti-ferromagnetic (SyAF) layer disposed on a second side of the free layer opposite to the reference layer, the balancing synthetic anti-ferromagnetic (SyAF) layer including a pair of pinning layers having opposite magnetization directions and separated by a spacer layer.