Thin semiconductor package and related methods
Implementations of a method of forming a semiconductor package may include forming a plurality of notches into a first side of a wafer, the first side of the wafer including a plurality of electrical contacts. The method may also include coating the first side of the wafer and an interior of the plurality of notches with a molding compound, grinding a second side of the wafer to thin the wafer to a desired thickness, forming a back metal on a second side of the wafer, exposing the plurality of electrical contacts through grinding a first side of the molding compound, and singulating the wafer at the plurality of notches to form a plurality of semiconductor packages.
1. A method of forming a semiconductor package comprising:
forming a plurality of notches into a first side of a wafer, the first side of the wafer comprising a plurality of electrical contacts;
coating the first side of the wafer and an interior of the plurality of notches with a molding compound;
thinning a second side of the wafer to thin the wafer to a desired thickness; and
singulating the wafer at the plurality of notches to form a plurality of semiconductor packages.
2. The method of claim 1 , further comprising forming a back metal on the second side of the wafer, forming a groove through the back metal, coating the second side of the wafer and the back metal with a second molding compound, and grinding the second molding compound to a desired thickness.
3. The method of claim 1 , wherein each notch in the plurality of notches is a stepwise notch.
4. The method of claim 1 , wherein the second side of the wafer is thinned to a depth of the plurality of notches.
5. The method of claim 2 , wherein a portion of the wafer separates the back metal and the plurality of notches.
6. The method of claim 1 , further comprising exposing the plurality of electrical contacts through thinning a first side of the molding compound.
7. The method of claim 1 , wherein substantially 90 percent of a back portion of the wafer is removed during thinning the second side of the wafer.
8. The method of claim 1 , wherein the molding compound is cured between 100 and 200 degrees Celsius with a pressure of substantially 5 psi applied to the second side of the wafer.
9. A method of forming a semiconductor package comprising:
forming a plurality of notches into a first side of a wafer, the first side of the wafer comprising a plurality of electrical contacts;
coating the first side of the wafer and an interior of the plurality of notches with a molding compound;
forming a back metal on a second side of the wafer;
exposing the plurality of electrical contacts through thinning a first side of the molding compound; and
singulating the wafer at the plurality of notches to form a plurality of semiconductor packages.
10. The method of claim 9 , further comprising thinning the second side of the wafer to a desired thickness.
11. The method of claim 10 , wherein substantially 90 percent of a back portion of the wafer is removed during thinning the second side of the wafer.
12. The method of claim 9 , further comprising forming a groove through the back metal on the second side of the wafer, coating the second side of the wafer and the back metal with a second molding compound, and grinding the second molding compound to a desired thickness.
13. The method of claim 9 , wherein each notch in the plurality of notches is a stepwise notch.
14. The method of claim 9 , wherein the second side is thinned to a depth of the plurality of notches.
15. The method of claim 9 , wherein a portion of the wafer separates the back metal and the plurality of notches.
16. A method of forming a semiconductor package comprising:
forming a plurality of notches into a second side of a wafer opposite a first side of a wafer, the first side of the wafer comprising a plurality of electrical contacts;
coating the first side of the wafer with a first molding compound;
coating the second side of the wafer with a second molding compound;
exposing the plurality of electrical contacts through thinning a first side of the first molding compound; and
singulating the wafer along the plurality of notches forming a plurality of semiconductor packages.
17. The method of claim 16 , wherein the first molding compound is thinned using one of a mechanical polishing and a chemical etching technique.
18. The method of claim 16 , further comprising thinning the second molding compound to a desired thickness.
19. The method of claim 16 , further comprising thinning the second side of the wafer to a desired thickness.
20. The method of claim 16 , further comprising forming a metal layer over the second molding compound and the second side of the wafer.