Semiconductor package and method of fabricating semiconductor package
A method of fabricating a semiconductor package includes providing a substrate having at least one contact and forming a redistribution layer on the substrate. The formation of the redistribution layer includes forming a dielectric material layer over the substrate and performing a double exposure process to the dielectric material layer. A development process is then performed and a dual damascene opening is formed in the dielectric material layer. A seed metallic layer is formed over the dual damascene opening and over the dielectric material layer. A metal layer is formed over the seed metallic layer. A redistribution pattern is formed in the first dual damascene opening and is electrically connected with the at least one contact.
1. A method of forming a semiconductor structure, comprising
providing a substrate having at least one contact therein and a dielectric material layer thereon;
performing a double exposure process to the dielectric material layer including sequentially performing a first exposure process to form first exposure portions in the dielectric material layer and performing a second exposure process to form second exposure portions in the dielectric material layer;
performing a development process to dissolve the first and second exposure portions and over-develop the dielectric material layer to form a dual damascene opening with a via opening wider than the first exposure portions and a trench opening wider than the second exposure portion;
forming a seed metallic layer over the dual damascene opening and over the dielectric material layer; and
forming a metallic pattern filled in the dual damascene opening and electrically connected with the at least one contact.
2. The method as claimed in claim 1 , wherein the first exposure portions are formed with a first depth in the dielectric material layer and the second exposure portions are formed with a second depth in the dielectric material layer, and the first depth is larger than the second depth.
3. The method as claimed in claim 2 , wherein locations of the first exposure portions are overlapped with locations of the second exposure portions.
4. The method as claimed in claim 1 , wherein the first exposure process is performed with a first energy dose and the second exposure process is performed with a second energy dose, and the first energy dose is larger than the second energy dose.
5. The method as claimed in claim 1 , wherein the via opening exposes the at least one contact and the trench opening is connected with the at least one via opening.
6. The method as claimed in claim 5 , wherein forming a metallic pattern in the dual damascene opening includes forming a via portion located within the via opening and forming a routing portion located within the trench opening.
7. The method as claimed in claim 1 , wherein forming a metallic pattern comprises forming a metallic layer filling the dual damascene opening, and performing a planarization process to remove the metallic layer and the seed metallic layer outside the dual damascene opening.
8. A method of forming an interconnection structure, comprising:
providing a substrate having contacts and a dielectric material layer covering the contacts;
performing a first exposure process with a first energy dose to form first exposure portions in the dielectric material layer;
performing a second exposure process with a second energy dose to form second exposure portions in the dielectric material layer, wherein the first energy dose is larger than the second energy dose;
performing a development process dissolving the first exposure portions and the second exposure portions of the dielectric material layer and over-developing the dielectric material layer in the same development process to form via openings larger than the first exposure portions and the trench openings larger than the second exposure portions;
forming a seed metallic layer over the dielectric material layer and covering the via openings and trench openings; and
forming metal patterns on the seed metallic layer and filled within the via openings and the trench openings.
9. The method as claimed in claim 8 , wherein performing the development process further comprises performing a curing process.
10. The method as claimed in claim 8 , wherein the seed metallic layer is formed conformally covering the via openings and the trench openings.
11. The method as claimed in claim 10 , wherein the seed metallic layer including titanium and copper is formed by sputtering.
12. The method as claimed in claim 10 , wherein the seed metallic layer is formed to cover the contacts exposed by the via openings.
13. The method as claimed in claim 8 , wherein forming metal patterns comprises forming a metal layer filling the via openings and the trench openings, and performing a planarization process to remove the metal layer and the seed metallic layer outside the dual damascene opening.
14. The method as claimed in claim 13 , wherein the metal layer including copper is formed by electroplating.
15. The method as claimed in claim 8 , wherein the first exposure portions are formed at locations overlapped with locations of the second exposure portions.