Methods and apparatus for high reflectivity aluminum layers
Methods and apparatus for increasing reflectivity of an aluminum layer on a substrate. In some embodiments, a method of depositing an aluminum layer on a substrate comprises depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on the substrate with a chemical vapor deposition (CVD) process, pre-treating the layer of cobalt or cobalt alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius if a top surface of the layer of cobalt or cobalt alloy is compromised, and depositing a layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a CVD process at a temperature of approximately 120 degrees Celsius. Pre-treatment of the layer of cobalt or cobalt alloy may be accomplished for a duration of approximately 60 seconds to approximately 120 seconds.
1. A method of depositing an aluminum layer on a substrate, comprising:
depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on a feature on the substrate;
pre-treating the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a thermal hydrogen anneal before depositing a layer of aluminum;
conformally depositing the layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy on the feature on the substrate at a temperature of approximately 60 degrees Celsius to approximately 250 degrees Celsius, wherein the layer of aluminum has a reflectivity of at least 85% for wavelengths between approximately 250 nm and approximately 900 nm and a thickness of approximately 300 angstroms to approximately 1,000 angstroms; and
annealing the feature after conformally depositing the layer of aluminum, wherein the layer of aluminum maintains the reflectivity of at least 85% after annealing of the feature.
2. The method of claim 1 , further comprising:
pre-treating the layer of cobalt or cobalt alloy at a temperature of approximately 300 degrees Celsius to approximately 400 degrees Celsius.
3. The method of claim 1 , further comprising:
pre-treating the layer of cobalt or cobalt alloy for a duration of approximately 60 seconds to approximately 120 seconds.
4. The method of claim 1 , further comprising:
depositing the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy to a thickness of approximately 20 angstroms to approximately 30 angstroms.
5. The method of claim 1 , further comprising:
depositing the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a chemical vapor deposition (CVD) process, a metal-organic chemical vapor deposition (MOCVD) process or a physical vapor deposition (PVD) process.
6. The method of claim 1 , wherein the layer of cobalt or cobalt alloy includes cobalt or cobalt silicon and wherein the layer of titanium or titanium alloy includes titanium, titanium silicon, or titanium aluminum.
7. The method of claim 1 ,
wherein the temperature during conformally depositing the layer of aluminum increases an interface nucleation when aluminum is deposited on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy and increases smoothness, continuity, and reflectivity of the layer of aluminum.
8. The method of claim 1 , further comprising:
depositing the layer of aluminum using a hydrogen gas, an ammonia gas, a hydrazine compound gas, a hydrogen and ammonia mixed gas, or a hydrogen and hydrazine compound gas as a reactant gas.
9. The method of claim 1 , further comprising:
depositing the layer of aluminum using an alane precursor or an alkyl precursor.
10. The method of claim 9 , wherein the alane precursor includes trimethylamine-alane borane (TMAAB), methyl pyridine aluminum, or dimethylethylamine-alane.
11. The method of claim 9 , wherein the alkyl precursor includes dimethylaluminum hydride (DMAH).
12. The method of claim 1 , further comprising:
depositing the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy on a layer of titanium nitride deposited on the substrate.
13. A method of depositing an aluminum layer on a substrate, comprising:
depositing a layer of cobalt or cobalt alloy or a layer of titanium or titanium alloy on a feature of an image sensor on the substrate with a chemical vapor deposition (CVD) process to a thickness of approximately 20 angstroms to approximately 30 angstroms; and
pre-treating the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy with a thermal hydrogen anneal at a temperature of approximately 400 degrees Celsius before depositing a layer of aluminum; and
conformally depositing the layer of aluminum on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy on the feature on the substrate with a CVD process at a temperature of approximately 120 degrees Celsius and to a thickness of approximately 300 angstroms to approximately 1,000 angstroms, wherein the layer of aluminum has a reflectivity of at least 85% for wavelengths between approximately 250 nm and approximately 900 nm; and
annealing the feature after conformally depositing the layer of aluminum, wherein the layer of aluminum maintains the reflectivity of at least 85% after annealing of the feature.
14. The method of claim 13 ,
wherein the temperature during conformally depositing the layer of aluminum increases an interface nucleation when aluminum is deposited on the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy and increases smoothness, continuity, and reflectivity of the layer of aluminum.
15. The method of claim 13 , further comprising:
depositing the layer of cobalt or cobalt alloy or the layer of titanium or titanium alloy on a layer of titanium nitride deposited on the substrate.