Methods, apparatuses and systems for substrate processing for lowering contact resistance
Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.
1. A method of substrate processing for lowering contact resistance of contact pads, comprising:
circulating a cooling fluid in at least one channel of a pedestal;
exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius; and
flowing a hydrogen gas over a topside of the substrate after the cooling of the substrate to maximize a cleaning effect of the hydrogen gas.
2. The method of claim 1 , wherein the hydrogen gas comprises a hydrogen gas combination.
3. The method of claim 1 , wherein the hydrogen gas is flowed during a pre-clean process.
4. The method of claim 1 , wherein the hydrogen gas is flowed after a pre-clean process.
5. The method of claim 1 , wherein the hydrogen gas is flowed in combination with argon gas.
6. The method of claim 1 , wherein the cooling gas comprises helium gas.
7. The method of claim 1 , wherein the cooling gas comprises a hydrogen/helium gas combination.
8. The method of claim 1 , further comprising chucking the substrate to the pedestal using an electrostatic chuck.
9. The method of claim 1 , further comprising:
heating at least one of the cooling fluid or the cooling gas to assist in maintaining a temperature of the substrate.
10. The method of claim 1 , further comprising:
monitoring a contact resistance of at least one contact pad on the substrate during the hydrogen flow.
11. The method of claim 10 , wherein if the contact resistance increases during the hydrogen flow, the flow of hydrogen is decreased.
12. The method of claim 10 , wherein if the contact resistance decreases during the hydrogen flow, the flow of hydrogen is increased.
13. The method of claim 1 , wherein a flow rate of at least one of the cooling fluid or the cooling gas is controlled to maintain a temperature of the substrate.