Memory device with low density thermal barrier
Methods, systems, and devices related to a memory device with a thermal barrier are described. The thermal barrier (e.g., a low density thermal barrier) may be positioned between an access line (e.g., a digit line or a word line) and a cell component. The thermal barrier may be formed on the surface of a barrier material by applying a plasma treatment to the barrier material. The thermal barrier may have a lower density than the barrier material and may be configured to thermally insulate the cell component from thermal energy generated in the memory device, among other benefits.
1. A method, comprising:
forming a cell material configured to store data;
forming a barrier material having a first density;
applying plasma to the barrier material to form a portion of the barrier material having a second density different than the first density, the portion of the barrier material configured to thermally insulate the cell material; and
forming an access line configured to communicate with the cell material through the barrier material, wherein the barrier material is positioned between the cell material and the access line.
2. The method of claim 1 , further comprising:
forming a first conductive material positioned between the cell material and the barrier material, wherein the barrier material is configured to isolate the first conductive material from a material of the access line.
3. The method of claim 2 , wherein the barrier material comprises a diffusion barrier material configured to limit diffusion between the first conductive material and the material of the access line.
4. The method of claim 2 , wherein:
the first conductive material is in contact with the portion of the barrier material that comprises the second density; and
the access line comprises a word line.
5. The method of claim 1 , wherein the second density is less than the first density.
6. The method of claim 1 , wherein the access line is in contact with the portion of the barrier material and comprises a digit line.
7. The method of claim 1 , further comprising:
exposing the barrier material to air before applying the plasma to the barrier material.
8. The method of claim 1 , wherein the barrier material comprises tungsten silicon nitride.
9. The method of claim 8 , further comprising:
determining a proportion of silicon, tungsten, nitrogen, or any combination thereof in the portion of the barrier material;
determining an amount of dinitrogen in the plasma based at least in part on the proportion; and
applying the plasma to the barrier material based at least in part on determining the amount of dinitrogen or a resistivity of the barrier material.
10. The method of claim 1 , wherein a gas associated with the plasma comprises dinitrogen.
11. The method of claim 10 , wherein the gas further comprises helium.