Three-dimensional co-axial linear photonic switch
Techniques, systems, and devices are disclosed that relate to coaxial photoconductive switch modules. The coaxial photoconductive switch may include an outer conductor, an inner conductor, and a photoconductive material positioned between the inner conductor and the outer conductor. The inner conductor, the outer conductor, and the photoconductive material have a predetermined height. A bias voltage may be applied between the inner conductor and the outer conductor. When light of a predetermined wavelength and a predetermined intensity is incident on the photoconductive material, the photoconductive material may break down allowing a current to flow through the photoconductive material between the inner conductor and the outer conductor.
1. A method for forming a high-voltage photoconductive switch module, comprising:
selecting a height value for a coaxial structure;
forming, based on the height value, the coaxial structure that includes:
a cylindrically symmetric outer conductor, and
a cylindrically symmetric inner conductor;
determining a thickness of a photoconductive material based on an inner radius of the outer conductor and an outer radius of the inner conductor; and
forming the photoconductive material into a coaxial shape having the determined thickness and the height value, wherein the height value allows the photoconductive material to absorb light at a predetermined absorption efficiency at a predetermined wavelength, and
forming the coaxial structure includes placing the coaxial photoconductive material between the cylindrically symmetric inner conductor and the cylindrically symmetric outer conductor, wherein the coaxial photoconductive material is configured to absorb light of the predetermined wavelength at the predetermined absorption efficiency and become electronically conductive between the inner conductor and the outer conductor at a breakdown voltage that is determined based on the thickness of the coaxial photoconductive material and separately from the predetermined absorption efficiency, and wherein the cylindrically symmetric inner conductor, the cylindrically symmetric outer conductor, and the coaxial photoconductive material are configured as a photoconductive switch.
2. The method of claim 1 , wherein the forming the coaxial photoconductive material comprises laser cutting or etching.
3. The method of claim 1 , wherein forming the coaxial structure includes forming the cylindrically symmetric outer conductor and the cylindrically symmetric inner conductor using one or more of e-beam deposition, sputtering, chemical vapor deposition, or electrodeposition.
4. The method of claim 1 , wherein the cylindrically symmetric inner conductor and the cylindrically symmetric outer conductor are formed from a material that includes one or more of the following metals: titanium, gold, aluminum, silver, platinum, chromium, or copper, or one or more conductive ceramics including indium tin oxide (ITO), aluminum doped zinc oxide (AZO), or fluorine doped tine oxide (FTO).
5. The method of claim 1 , wherein the photoconductive material includes one of silicon, germanium, silicon carbide, diamond, gallium nitride, gallium arsenide, gallium phosphide, aluminum nitride, boron nitride, zinc oxide, or cadmium telluride.
6. The method of claim 1 , wherein forming the coaxial structure comprises:
forming-the cylindrically symmetric inner conductor as a solid cylinder.
7. The method of claim 1 , wherein selecting the height value of the coaxial structure comprises:
determining the height value based on the predetermined absorption efficiency of the predetermined wavelength.
8. The method of claim 1 , wherein the outer conductor, the inner conductor, and the photoconductive material are each shaped to have a same height.
9. The method of claim 1 , wherein the thickness of the photoconductive material is equal to a difference between an outer radius of the inner conductor and an inner radius of the outer conductor.