STRUCTURE AND METHOD TO SUPPRESS WORK FUNCTION EFFECT BY PATTERNING BOUNDARY PROXIMITY IN REPLACEMENT METAL GATE
A semiconductor device includes a first transistor formed on a substrate, the first transistor including a channel region positioned on the substrate; a second transistor formed on the substrate, the second transistor including a channel region positioned on the substrate; a high-k dielectric layer disposed on the channel region of the first transistor and the channel region of the second transistor; a first transistor metal gate positioned in contact with the high-k dielectric on the first transistor; a second transistor metal gate positioned in contact with the high-k dielectric on the second transistor; an oxygen absorbing barrier disposed in contact with the high-k dielectric between the first transistor and the second transistor; and a conductive electrode material disposed on the first transistor, the second transistor, and the oxygen absorbing barrier.
1 . A semiconductor device, comprising:
a first transistor formed on a substrate, the first transistor comprising a channel region positioned on the substrate;
a second transistor formed on the substrate, the second transistor comprising a channel region positioned on the substrate;
a high-k dielectric layer disposed on the channel region of the first transistor and the channel region of the second transistor;
a first transistor metal gate positioned in contact with the high-k dielectric on the first transistor;
a second transistor metal gate positioned in contact with the high-k dielectric on the second transistor, the first transistor metal gate also positioned on an in contact with the first transistor metal gate;
an oxygen absorbing barrier disposed in contact with the high-k dielectric between the first transistor and the second transistor; and
a conductive electrode material disposed on the first transistor metal gate on the first transistor and the second transistor.
2 . The semiconductor device of claim 1 , wherein the first transistor is an nFET.
3 . The semiconductor device of claim 2 , wherein the second transistor is a pFET.
4 . The semiconductor device of claim 1 , wherein the first transistor metal gate is TiN, TiC, and TiN, TiAl, Al, Ti, or a combination thereof.
5 . The semiconductor device of claim 1 , wherein the first transistor metal gate is a high oxygen absorbing metal.
6 . The semiconductor of claim 1 , wherein the first transistor metal gate comprises an oxygen absorbing material.
7 . The semiconductor device of claim 1 , wherein the second transistor metal gate comprises an oxygen providing material.
8 . The semiconductor device of claim 1 , wherein the oxygen absorbing barrier comprises a metal.
9 . The semiconductor device of claim 1 , wherein the oxygen absorbing barrier comprises an alkaline earth metal.
10 . The semiconductor device of claim 9 , wherein the oxygen absorbing barrier comprises a transition metal.
11 . A semiconductor device, comprising:
a first transistor formed on a substrate, the first transistor comprising a channel region positioned on the substrate;
a second transistor formed on the substrate, the second transistor comprising a channel region positioned on the substrate;
a high-k dielectric layer disposed on the channel region of the first transistor and the channel region of the second transistor, the high-k dielectric layer extending continuously over the channel region of the first transistor and the channel region of the second transistor;
a first transistor metal gate positioned in contact with the high-k dielectric on the first transistor;
a second transistor metal gate positioned in contact with the high-k dielectric on the second transistor, the first transistor metal gate also positioned on an in contact with the first transistor metal gate;
an oxygen absorbing barrier disposed in contact with the high-k dielectric between the first transistor and the second transistor; and
a conductive electrode material disposed on the first transistor metal gate on the first transistor and the second transistor.
12 . The semiconductor device of claim 11 , wherein the first transistor is an nFET.
13 . The semiconductor device of claim 12 , wherein the second transistor is a pFET.
14 . The semiconductor device of claim 11 , wherein the first transistor metal gate is TiN, TiC, and TiN, TiAl, Al, Ti, or a combination thereof.
15 . The semiconductor device of claim 11 , wherein the first transistor metal gate is a high oxygen absorbing metal.
16 . The semiconductor of claim 11 , wherein the first transistor metal gate comprises an oxygen absorbing material.
17 . The semiconductor device of claim 11 , wherein the second transistor metal gate comprises an oxygen providing material.
18 . The semiconductor device of claim 11 , wherein the oxygen absorbing barrier comprises a metal.
19 . The semiconductor device of claim 11 , wherein the oxygen absorbing barrier comprises an alkaline earth metal.
20 . The semiconductor device of claim 19 , wherein the oxygen absorbing barrier comprises a transition metal.