Integrated circuit including standard cell and method of fabricating the integrated circuit

1. An integrated circuit comprising a standard cell, the integrated circuit comprising:

a plurality of first wells extending in a first horizontal direction, the plurality of first wells having a first width and a first conductivity type; and

a plurality of second wells extending in the first horizontal direction, the plurality of second wells having a second width and a second conductivity type,

wherein the plurality of first wells and the plurality of second wells are alternately arranged in a second horizontal direction that is orthogonal to the first horizontal direction, and

wherein the standard cell has a length in the second horizontal direction, the length being equal to a sum of m times a half of the first width and n times a half of the second width, wherein m and n are integers equal to or greater than 3.

2. The integrated circuit of claim 1 , wherein a boundary of the standard cell, which is parallel to the first horizontal direction, overlaps a boundary between a first well and a second well or overlaps a center line of a first well or a second well, which extends in the first horizontal direction.

3. The integrated circuit of claim 1 , further comprising:

a plurality of first power lines extending in the first horizontal direction on the plurality of first wells, the plurality of first power lines being configured such that a first supply voltage is applied thereto; and

a plurality of second power lines extending in the first horizontal direction on the plurality of second wells, the plurality of second power lines being configured such that a second supply voltage is applied thereto.

4. The integrated circuit of claim 3 , wherein the standard cell is configured to receive the first supply voltage from at least two first power lines or receive the second supply voltage from at least two second power lines.

5. The integrated circuit of claim 1 , wherein the standard cell comprises:

a plurality of first fins extending in the first horizontal direction on two or more first wells; and

a first gate line extending in the second horizontal direction, the first gate line forming transistors with the plurality of first fins.

6. The integrated circuit of claim 5 , wherein the standard cell further comprises:

a plurality of second fins extending in the first horizontal direction on two or more second wells; and

a second gate line extending in the second horizontal direction, the second gate line forming transistors with the plurality of second fins.

7. The integrated circuit of claim 1 , wherein the standard cell further comprises:

at least one first fin extending in the first horizontal direction on a first well; and

at least one second fin extending in the first horizontal direction on a second well, and

the at least one first fin and the at least one second fin are terminated by a diffusion break on a boundary of the standard cell.

8. The integrated circuit of claim 7 , wherein the first conductivity type is n-type and the second conductivity type is p-type,

the at least one first fin is terminated by a single diffusion break (SDB), and

the at least one second fin is terminated by a double diffusion break (DDB).

9. The integrated circuit of claim 1 , wherein the standard cell further comprises:

a plurality of first fins extending in the first horizontal direction on at least one first well; and

a plurality of second fins extending in the first horizontal direction on at least one second well, and

the number of the plurality of first fins differs from the number of the plurality of second fins.

10. The integrated circuit of claim 1 , wherein the first width is the same as the second width.