Integrated photobiomodulation device
Embodiments of the disclosed subject matter may provide a display device or display surface including at least one emissive layer and a near-infrared (NIR) emissive layer disposed in a stack arrangement between a first electrode and a second electrode, where NIR light is emitted from the NIR emissive layer through the at least one emissive layer, or visible light is emitted from the at least one emissive layer through the NIR emissive layer, and where the NIR light output by the NIR emissive layer has a peak wavelength of 740 nm-1000 nm. Embodiments of the disclosed subject matter may provide a near infrared (NIR) light source disposed behind or in front of an active-matrix organic light emitting diode (AMOLED), where the NIR light source has an area greater than 25% of an active area of the display device or display surface.
1. A device comprising:
an emissive organic light emitting diode (OLED) device, comprising:
a first electrode;
a second electrode;
a display device or display surface including at least one emissive layer and a near-infrared (NIR) emissive layer disposed in a stack arrangement between the first electrode and the second electrode, wherein the NIR emissive layer includes a plurality of segments for emitting a NIR light; and
control circuitry configured to control a duty cycle of the display device or the display surface to pulse the NIR light output by the plurality of segments of the NIR emissive layer, wherein at least one of the plurality of segments emits the NIR light during the duty cycle and the NIR light is emitted in sequence from different segments at different times,
wherein the NIR light is emitted from the NIR emissive layer through the at least one emissive layer, or visible light is emitted from the at least one emissive layer through the NIR emissive layer,
wherein the NIR light output by the NIR emissive layer has a peak wavelength of 740 nm-1000 nm, and
wherein an average power density of the display device or the display surface for the NIR emissive layer is between 50-200 mW/cm 2 .
2. The device of claim 1 , wherein more than 50% of energy output of the NIR emissive layer has a wavelength greater than 750 nm.
3. The device of claim 1 , further comprising at least one charge generation layer disposed between the at least one emissive layer and the NIR emissive layer, or disposed between each of the emissive layers when the at least one emissive layer includes two or more emissive layers.
4. The device of claim 1 , further comprising:
at least one additional electrode disposed between the first electrode and the second electrode,
wherein the NIR emissive layer is separately controllable from the at least one emissive layer.
5. The device of claim 1 , further comprising:
a third electrode; and
a fourth electrode,
wherein the third electrode and the fourth electrode are disposed between the first electrode and the second electrode, and
wherein an insulator is disposed between the NIR layer of the stack arrangement and the at least one emissive layer.
6. The device of claim 1 , wherein the at least one emissive layer is an organic emissive layer, and the near-infrared (NIR) emissive layer is an organic emissive layer.