Substrate processing apparatus and substrate processing method
A substrate processing apparatus removes foreign substances from a substrate at high removal efficiency. The substrate processing apparatus includes: a scrubber to perform surface processing of the substrate by bringing a scrubbing member into sliding contact with a first surface of the substrate, a hydrostatic support mechanism for supporting a second surface of the substrate via fluid pressure without contacting the substrate, the second surface being an opposite surface of the first surface, a cleaner to clean the processed substrate, and a dryer to dry the cleaned substrate. The scrubber brings the scrubbing member into sliding contact with the first surface while rotating the scrubbing member about a central axis of the scrubber.
1. A substrate processing method for processing a substrate having a first surface and a second surface, the second surface being an opposite side of the first surface, comprising:
performing surface processing of the substrate by bringing at least one scrubbing tape into sliding contact with the first surface of the substrate while supporting the second surface of the substrate by a surface of a support stage via fluid pressure without contacting the substrate;
cleaning the substrate that has been subjected to the surface processing; and
drying the cleaned substrate.
2. The substrate processing method according to claim 1 , wherein the surface processing, the cleaning, and the drying are performed in a common processing chamber.
3. The substrate processing method according to claim 1 , wherein cleaning the substrate comprises:
supporting the second surface of the substrate by the surface of the support stage via the fluid pressure without contacting the substrate.
4. The substrate processing method according to claim 1 , wherein the first surface is a surface with no devices formed thereon, and the second surface is a surface with a device formed thereon.
5. The substrate processing method according to claim 1 , wherein the first surface is a surface with devices formed thereon, and the second surface is a surface with no devices formed thereon.
6. The substrate processing method according to claim 1 , wherein a material forming the first surface comprises silicon, a silicon compound, gallium, a gallium compound, metal, a metal compound, or an organic compound.
7. The substrate processing method according to claim 1 , wherein the at least one scrubbing tape comprises a material softer than a material forming the first surface, a material containing abrasive grains, or a polishing tape.
8. The substrate processing method according to claim 1 , wherein performing surface processing comprises:
bringing the at least one scrubbing tape into sliding contact with the first surface while supplying a processing liquid onto the first surface,
the processing liquid containing at least one of a component capable of dissolving a material forming the first surface, abrasive grains, or a component for preventing reattachment of the material removed by the at least one scrubbing tape or reaction products.
9. The substrate processing method according to claim 8 , wherein the abrasive grains comprise silicon dioxide, silicon carbide, silicon nitride, aluminum oxide, diamond, or a mixture of selected ones of these materials.
10. The substrate processing method according to claim 8 , wherein the processing liquid is neutral or alkaline.
11. The substrate processing method according to claim 8 , wherein the processing liquid is acidic.
12. The substrate processing method according to claim 1 , wherein:
cleaning the substrate comprises supplying a cleaning liquid onto the first surface of the substrate and cleaning the first surface with a contact type or non-contact type cleaning technique; and
the cleaning liquid comprises a solution having a predetermined pH, a solution containing a component for preventing reattachment of a material once removed by the at least one scrubbing tape, or pure water.
13. The substrate processing method according to claim 12 , wherein the cleaning liquid is neutral or alkaline.
14. The substrate processing method according to claim 12 , wherein the cleaning liquid is acidic.
15. The substrate processing method according to claim 1 , wherein drying the cleaned substrate comprises:
rotating the substrate at a high speed, supplying a gas to the first surface, or supplying a low-vapor-pressure solvent to the first surface.
16. The substrate processing method according to claim 1 , wherein drying the cleaned substrate comprises:
holding the substrate by chucks which contact a peripheral edge of the substrate.
17. The substrate processing method according to claim 1 , wherein performing surface processing comprises:
performing surface processing until the first surface has a surface roughness of 5 μm or smaller.
18. The substrate processing method according to claim 1 , wherein said bringing the at least one scrubbing tape into sliding contact with the first surface of the substrate comprises rotating the at least one scrubbing tape on the first surface of the substrate.
19. The substrate processing method according to claim 1 , wherein the at least one scrubbing tape comprises a plurality of scrubbing tapes.
20. The substrate processing method according to claim 19 , wherein said bringing the at least one scrubbing tape into sliding contact with the first surface of the substrate comprises rotating the plurality of scrubbing tapes on the first surface of the substrate around a common axis.