IP Library Granted Patent US 10,822,719
Granted Patent B2
US 10,822,719 · App. 16/406,417 · Granted Nov 3, 2020

Diamond materials comprising multiple CVD grown, small grain diamonds, in a single crystal diamond matrix

Inventor: Yarden Tsach (Rockville, MD)
Assignee: M7D Corporation
C30B29/04C30B25/183C30B25/20
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Quick Facts
Patent No.
US 10,822,719
App. No.
16/406,417
Granted
Nov 3, 2020
Kind
B2
Abstract

The present technology relates to diamond materials and structures created using chemical vapor deposition techniques (i.e., creation of synthetic diamond). The chemical vapor deposited diamond includes a multiphase material comprising (a) a single crystalline matrix phase and (b) plurality of diamond grains, each of the plurality of diamond grains being crystallographically distinct from the single crystalline matrix phase.

Claims (28)

1. A diamond material comprising:

a single crystal diamond substrate including at least one purposely created defect at least partially located on an exterior surface of the single crystal substrate, the at least one purposely created defect defined by a surface that has a different lattice orientation as the single crystal diamond substrate; and

a CVD grown diamond portion tangent to the at least one purposely created defect and comprising a first phase including a plurality of diamond grains which are distinct from the single crystal diamond substrate and a second phase forming a matrix for the first phase and consisting of single crystal diamond having the same lattice orientation as the single crystal diamond substrate.

2. The diamond material of claim 1 , further comprising:

a CVD grown diamond layer including a high fault density deposited between the at least one purposely created defect and the CVD grown diamond portion.

3. The diamond material of claim 1 , further comprising:

a CVD grown single crystal section consisting of single crystal diamond having the same lattice orientation as the single crystal diamond substrate.

4. The diamond material of claim 3 , wherein the CVD grown single crystal section at least partially surrounds one or more islands consisting of the CVD grown diamond portion.

5. The diamond material of claim 3 , wherein the CVD grown single crystal section fully surrounds one or more islands consisting of the CVD grown diamond portion.

6. The diamond material of claim 2 , wherein the CVD grown diamond portion forms one or more island structures bounded by the CVD grown diamond layer.

7. The diamond material of claim 2 , wherein scattered grains of the CVD grown diamond portion grow from the CVD grown diamond layer.

8. The diamond material of claim 2 , wherein scattered grains of the CVD grown diamond portion grown from the CVD grown diamond layer grow along a pathway.

9. The diamond material of claim 2 , wherein scattered grains of the CVD grown diamond portion grown from the CVD grown diamond layer grow along a linear pathway.

10. A diamond material comprising:

a single crystal diamond substrate;

a CVD grown diamond layer including a plurality of faults; and a CVD grown diamond portion in contact with the CVD grown diamond layer; the CVD grown diamond portion comprising a first phase including a plurality of diamond grains which are distinct from the single crystal diamond substrate and a second phase forming a matrix for the first phase and consisting of single crystal diamond having the same lattice orientation as the single crystal diamond substrate.

11. The diamond material of claim 10 , further comprising a CVD grown single crystal section consisting of single crystal diamond having the same lattice orientation as the single crystal diamond substrate.

12. The diamond material of claim 11 , wherein the CVD grown diamond portion forms one or more island structures bounded by the CVD grown diamond layer and the CVD grown single crystal section at least partially surrounds the one or more islands.

13. The diamond material of claim 12 , wherein the CVD grown single crystal section fully surrounds the one or more islands.

14. The diamond material of claim 10 , wherein scattered grains of the CVD grown diamond portion grow from the CVD grown diamond layer.

15. The diamond material of claim 10 , wherein scattered grains of the CVD grown diamond portion grown from the CVD grown diamond layer grow along a pathway.

16. The diamond material of claim 10 , wherein scattered grains of the CVD grown diamond portion grown from the CVD grown diamond layer grow along a linear pathway.

17. A diamond material comprising:

a single crystal diamond substrate having a conditioned exterior surface characterized by a plurality of defects, wherein each defect in the plurality of defects is defined by a surface that has a different lattice orientation than the single crystal diamond substrate;

a CVD grown diamond portion deposited on the conditioned exterior surface of the single crystal diamond substrate; the CVD diamond portion comprising a first phase including a plurality of diamond grains which are distinct from the single crystal diamond substrate and a second phase forming a matrix for the first phase and consisting of single crystal diamond having the same lattice orientation as the single crystal diamond substrate.

18. The diamond material of claim 17 , wherein scattered grains of the CVD grown diamond portion grow from the CVD grown diamond layer.

19. The diamond material of claim 17 , wherein scattered grains of the CVD grown diamond portion grown from the CVD grown diamond layer grow along a pathway.

20. The diamond material of claim 17 , wherein scattered grains of the CVD grown diamond portion grown from the CVD grown diamond layer grow along a linear pathway.

Assignments (2)
SECURITY INTEREST Recorded Oct 10, 2023
From: WD ADVANCED MATERIALS, LLC
To: TREE LINE CAPITAL PARTNERS, LLC, AS COLLATERAL AGENT
Reel/Frame 065175/0286 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 24, 2020
From: TSACH, YARDEN
To: M7D CORPORATION
Reel/Frame 053872/0321 →
Continuity (2)
Provisional Application 62668410 · May 8, 2018
Related Publication 20190352797A1 · Nov 21, 2019