SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR

1 . A semiconductor device comprising:

a substrate including a plurality of fins;

a plurality of gate electrodes intersecting the plurality of fins;

an active contact electrically connected to the plurality of fins;

a plurality of vias comprising a first via and a second via; and

a plurality of interconnection lines disposed on the plurality of vias,

wherein the plurality of interconnection lines comprise a first interconnection line disposed on both the first via and the second via,

wherein the first interconnection line is electrically connected to the active contact through the first via,

wherein each of the plurality of vias includes a via body portion and a via barrier portion covering a bottom surface and sidewalls of the via body portion, and

wherein each of the plurality of interconnection lines includes an interconnection line body portion and an interconnection line barrier portion covering a bottom surface and sidewalls of the interconnection line body portion.

2 . The semiconductor device of claim 1 , further comprising:

an interlayer insulating layer covering the active contact,

wherein the plurality of vias are disposed on the interlayer insulating layer, and

wherein a top surface of the interlayer insulating layer covers a bottom surface of the second via.

3 . The semiconductor device of claim 1 , further comprising:

a connection structure disposed between the active contact and the first via,

wherein the second via is spaced apart from the connection structure.

4 . The semiconductor device of claim 1 , further comprising:

a gate contact electrically connected to at least one of the plurality of gate electrodes,

wherein the plurality of vias further comprise:

a third via electrically connected to the gate contact; and

a fourth via overlapping one of the plurality of gate electrodes,

wherein the fourth via is spaced apart from the one gate electrode with an interlayer insulating layer interposed therebetween.

5 . The semiconductor device of claim 1 , wherein the barrier portion of the first interconnection line is disposed between the via body portion of the second via and the interconnection line body portion of the first interconnection line.

6 . The semiconductor device of claim 1 , wherein the active contact includes an active contact body portion and an active contact barrier portion covering a bottom surface and sidewalls of the active contact body portion, and

wherein the active contact body portion of the active contact includes a conductive material different from that of the via body portion of each of the plurality of vias.

7 . The semiconductor device of claim 1 , wherein the first interconnection line has an extension extending in a direction parallel with an extending direction of the gate electrodes, and

wherein the second via is disposed under the extension.

8 . The semiconductor device of claim 1 , wherein the first interconnection line has an extension extending in a direction parallel with an extending direction of the gate electrodes,

wherein the extension overlaps with a portion of the active contact, and

wherein the first via is disposed between the extension and the active contact.

9 . The semiconductor device of claim 1 , wherein the first via is a regular via, and

wherein the second via is a dummy via.

10 . The semiconductor device of claim 1 , wherein each of the plurality of fins comprises: a first fin disposed on a PMOSFET region; and a second fin disposed on an NMOSFET region,

wherein the first and second fins each extend in a first direction, and

wherein each of the plurality of gate electrodes extend in a second direction intersecting the first direction.

11 . A semiconductor device comprising:

a substrate;

a plurality of transistors disposed on the substrate;

a first interlayer insulating layer covering the plurality of transistors;

a second interlayer insulating layer disposed on the first interlayer insulating layer,

a third interlayer insulating layer disposed on the second interlayer insulating layer,

a first via disposed in the second interlayer insulating layer, and

an interconnection line disposed on the third interlayer insulating layer,

wherein the first interlayer insulating layer covers a bottom surface of the first via,

wherein the first via includes a via body portion and a via barrier portion covering a bottom surface and sidewalls of the via body portion,

wherein the interconnection line includes an interconnection line body portion and an interconnection line barrier portion covering a bottom surface and sidewalls of the interconnection line body portion, and

wherein the interconnection line barrier portion of the interconnection line is disposed between the body portion of the first via and the body portion of the interconnection line.

12 . The semiconductor device of claim 11 , further comprising:

a contact disposed in the first interlayer insulating layer, the contact electrically connected to the plurality of transistors,

wherein the first via is spaced apart from the contact.

13 . The semiconductor device of claim 1 , further comprising:

a second via disposed in the second interlayer insulating layer,

wherein the second via electrically connects the interconnection line to the plurality of transistors.

14 . The semiconductor device of claim 13 , wherein the first via is a dummy via, and

wherein the second via is a regular via.

15 . The semiconductor device of claim 11 , wherein the plurality of transistors comprises:

a plurality of first fins disposed on a PMOSFET region of the substrate;

a plurality of second fins disposed on an NMOSFET region of the substrate; and

a plurality of gate electrodes intersecting the plurality of first fins and the plurality of second fins.

16 . A semiconductor device comprising:

a substrate;

a first interlayer insulating layer disposed on the substrate;

a second interlayer insulating layer disposed on the first interlayer insulating layer;

a third interlayer insulating layer disposed on the second interlayer insulating layer,

a connection structure disposed in the first interlayer insulating layer;

a plurality of vias disposed in the second interlayer insulating layer, the plurality of vias comprising a first via and a second via; and

an interconnection line disposed in the third interlayer insulating layer,

wherein the first via is disposed between the interconnection line and the connection structure and electrically connects the interconnection line to the connection structure,

wherein a level of a bottom surface of the second via is substantially the same as a level of a top surface of the connection structure, and

wherein the second via is spaced apart from the connection structure, such that a top surface of the first interlayer insulating layer covers a bottom surface of the second via.

17 . The semiconductor device of claim 16 , wherein the second via is disposed under the interconnection line and is in contact with the interconnection line.

18 . The semiconductor device of claim 16 , further comprising:

a fin disposed on the substrate;

a gate electrode disposed on the substrate; and

a dummy connection structure disposed in the first interlayer insulating layer and insulated from both the fin and the gate electrode,

wherein the second via is disposed on the dummy connection structure.

19 . The semiconductor device of claim 16 , wherein the second via is spaced apart from the interconnection line, and

wherein a bottom surface of the third interlayer insulating layer covers a top surface of the second via.

20 . The semiconductor device of claim 16 , wherein the first via is a regular via, and

wherein the second via is a dummy via.