Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device
A method of producing semiconductor nanoparticles, semiconductor nanoparticles, and a light-emitting device are provided. The method includes heat-treating a mixture containing a salt of Ag, a salt containing at least one of In and Ga, an Se supply source, and an organic solvent at a temperature in the range of above 200° C. to 370° C. In the method, the ratio of the number of Ag atoms to the total number of In and Ga atoms in the mixture is above 0.43 to 2.5. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. The light-emitting device includes a light conversion member containing the semiconductor nanoparticles and a semiconductor light-emitting element.
1. A method of producing semiconductor nanoparticles, the method comprising:
heat-treating a mixture containing a salt of Ag, a salt containing at least one of In and Ga, an Se supply source, and an organic solvent at a temperature in a range of above 200° C. to 370° C. to obtain the semiconductor nanoparticles,
wherein
a ratio of a number of Ag atoms to a total number of In and Ga atoms in the mixture is above 0.43 to 2.5, and
wherein the method further comprises pre-heating the mixture at a temperature in a range of 30° C. to 190° C. for 1 min to 15 min before heat-treating the mixture at a temperature in the range of above 200° C. to 370° C.
2. The method of producing semiconductor nanoparticles according to claim 1 , wherein
the mixture further contains a salt of an alkali metal, and
a ratio of a number of atoms of the alkali metal to a total number of atoms of the alkali metal and Ag in the mixture is 0.85 or less.
3. The method of producing semiconductor nanoparticles according to claim 2 , wherein
the mixture further contains an S supply source, and a ratio of a number of S atoms to a total number of Se atoms and S atoms in the mixture is 0.95 or less.
4. The method of producing semiconductor nanoparticles according to claim 1 , wherein
the mixture further contains an S supply source, and a ratio of a number of S atoms to a total number of Se atoms and S atoms in the mixture is 0.95 or less.