Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device
An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body having a first region of a first conductivity type, an active region configured to generate electromagnetic radiation and a second region of a second conductivity type in a stacking direction, an electrical contact metallization arranged on a side of the second region facing away from the active region and being opaque to the electromagnetic radiation, a radiation coupling-out region surrounding the electrical contact metallization at an edge side and an absorber layer structure arranged between the electrical contact metallization and the second region.
1. An optoelectronic semiconductor device comprising:
a semiconductor body comprising a first region of a first conductivity type, an active region configured to generate electromagnetic radiation and a second region of a second conductivity type in a stacking direction;
an electrical contact metallization arranged on a side of the second region facing away from the active region and being opaque to the electromagnetic radiation;
a radiation coupling-out region surrounding the electrical contact metallization at an edge side;
an absorber layer structure arranged between the electrical contact metallization and the second region; and
an adhesive layer arranged between the absorber layer structure and the electrical contact metallization,
wherein at least one layer of the absorber layer structure comprises gold, and
wherein at least one layer of the absorber layer structure comprises palladium and/or nickel.
2. The optoelectronic semiconductor device according to claim 1 , wherein the layer comprising the gold has a thickness of at most 500 nm.
3. The optoelectronic semiconductor device according to claim 1 , wherein the layer comprising the palladium and/or nickel has a thickness ranging from 0.5 nm to 100 nm.
4. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor body is based on a nitride compound semiconductor material.
5. The optoelectronic semiconductor device according to claim 1 , wherein the electrical contact metallization occupies an area portion of at least 20% of an area of the semiconductor body.
6. The optoelectronic semiconductor device according to claim 1 , wherein a distance of the absorber layer structure to a side surface of the semiconductor body lies within a range of 0.1 μm to 15 μm.
7. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor body comprises a trench formed in the second region, and wherein the trench at least partially surrounds the radiation coupling-out region.
8. The optoelectronic semiconductor device according to claim 7 , wherein the trench penetrates at least half of the semiconductor body in the stacking direction.
9. The optoelectronic semiconductor device according to claim 7 , wherein the trench completely penetrates the semiconductor body in the stacking direction.
10. The optoelectronic semiconductor device according to claim 7 , wherein the trench is at least partially filled with a light-absorbing material.
11. The optoelectronic semiconductor device according to claim 7 , wherein the trench comprises a plurality of sections.
12. The optoelectronic semiconductor device according to claim 7 , wherein a length of the trench comprises at least 10% of a circumference of the radiation coupling-out region.
13. The optoelectronic semiconductor device according to claim 7 , wherein the trench has side flanks including a flank angle of less than 70° with a major extension plane of the semiconductor body.