Photodetector
A sensor includes a first substrate including at least a first pixel. The first pixel includes an avalanche photodiode to convert incident light into electric charge and includes an anode and a cathode. The cathode is in a well region of the first substrate. The first pixel includes an isolation region that isolates the well region from at least a second pixel that is adjacent to the first pixel. The first pixel includes a hole accumulation region between the isolation region and the well region. The hole accumulation region is electrically connected to the anode.
1. A sensor, comprising:
a first semiconductor layer, including:
a pixel region including a plurality of avalanche photodiodes, the pixel region including:
a first avalanche photodiode including a first cathode and a first anode; and
a second avalanche photodiode including a second cathode and a second anode;
a first isolation region disposed adjacent to the first avalanche photodiode;
a second isolation region disposed between the first avalanche photodiode and the second avalanche photodiode; and
a peripheral region disposed outside of the pixel region, the peripheral region including:
a first region electrically connected to a first wiring through a first via; and
a first trench disposed between the first isolation region and the first region; and
a first wiring layer stacked on the first semiconductor layer and including the first wiring and the first via.
2. The sensor according to claim 1 , wherein the first isolation region extends from a light incident side of the first semiconductor layer to a side of the first semiconductor layer opposite the light incident side.
3. The sensor according to claim 1 , wherein the first region is connected to a ground.
4. The sensor according to claim 1 , wherein the peripheral region comprises a second trench between the first isolation region and the first trench.
5. The sensor according to claim 1 , further comprising at least one of an oxide film, a nitride film, a metal film or a conductive material film disposed in the first trench.
6. The sensor according to claim 1 , further comprising a second wiring layer and a vertical hole extending from a light incident side of the first semiconductor layer to a metal pad disposed in the second wiring layer.
7. The sensor according to claim 1 , further comprising:
a first substrate, including:
the first semiconductor layer; and
the first wiring layer, wherein the first wiring layer includes:
a second wiring;
a first via, wherein the first cathode is electrically connected to the second wiring through the first via;
a third wiring; and
a second via, wherein the first anode is electrically connected to the third wiring through the second via; and
a second substrate stacked on the first substrate, the second substrate including:
a second wiring layer, including:
a fourth wiring directly bonded to the second wiring; and
a fifth wiring directly bonded to the third wiring.
8. The sensor according to claim 1 ,
wherein the first isolation region includes:
a second trench including a first portion disposed at a light incident side of the first semiconductor layer and a second portion disposed at an opposite side of the light incident side;
a first metal film disposed in the second trench; and
a void in the first metal film, and
wherein a line width of the second trench on a light incidence side of the first substrate is greater than a line width of the second trench on a side of the first semiconductor layer opposite to the light incident side.
9. The sensor according to claim 1 , further comprising a first light-shielding film extending from an inside of the first isolation region toward the first region,
wherein a part of the first light-shielding film is attached to the first region, and wherein the first light-shielding film includes at least one of tungsten, aluminum, copper or polysilicon.
10. The sensor according to claim 1 , further comprising:
an on-chip lens disposed on the first semiconductor layer;
a first film disposed on the second isolation region; and
a second film disposed on the on-chip lens and attached to the first film.
11. A sensor, comprising:
a first semiconductor layer, including:
a first avalanche photodiode including a first cathode and a first anode;
a second avalanche photodiode including a second cathode and a second anode; and
a first isolation region disposed between the first avalanche photodiode and the second avalanche photodiode, the first isolation region including:
a first trench including a first portion disposed at a light incident side of
the first semiconductor layer and a second portion disposed at a side of the first semiconductor layer opposite to the light incident side;
a first metal film disposed in the first trench; and
a void disposed in the first metal film,
an on-chip lens disposed on the first semiconductor layer;
a first film disposed on the first isolation region; and
a second film disposed on the on-chip lens and attached to the first film,
wherein a first width of the first portion is greater than a second width of the second portion and the first metal film is attached to the first film.
12. The sensor according to claim 11 , wherein the first isolation region extends from the light incident side of the first semiconductor layer to the side of the first semiconductor layer opposite to the light incident side.
13. The sensor according to claim 11 , further comprising a first wiring layer and a vertical hole extending from the light incident side of the first semiconductor layer to a metal pad disposed in the first wiring layer.
14. The sensor according to claim 11 , further comprising:
a first substrate, including:
the first semiconductor layer; and
a first wiring layer, wherein the first wiring layer includes:
a first wiring;
a first via, wherein the first cathode is electrically connected to the first wiring through the first via;
a second wiring; and
a second via, wherein the first anode is electrically connected to the second wiring through the second via; and
a second substrate stacked on the first substrate, the second substrate including:
a second wiring layer, the second wiring layer including:
a third wiring directly bonded to the first wiring; and
a fourth wiring directly bonded to the second wiring.
15. The sensor according to claim 11 , further comprising a first light-shielding film extending from an inside of a second isolation region toward a first region, wherein a part of the first light-shielding film is attached to the first region and the first light-shielding film includes at least one of tungsten, aluminum, copper or polysilicon.
16. The sensor according to claim 11 , further comprising a conductive film between the first isolation region and the second avalanche photodiode.
17. The sensor according to claim 11 , further comprising:
a first light shielding film on a same surface of the first substrate as the on-chip lens;
a first via electrically connected to the first light shielding film; and
a second via electrically connected to the first isolation region.
18. A sensor, comprising:
a first substrate, including:
a first semiconductor layer, including:
a first avalanche photodiode including a first cathode and a first anode;
a second avalanche photodiode including a second cathode and a second anode; and
a first isolation region disposed between the first avalanche photodiode; and the second avalanche photodiode; and
a first wiring layer, including:
a first wiring;
a first via, wherein the first cathode is electrically connected to the first wiring through the first via;
a second wiring; and
a second via, wherein the first anode is electrically connected to the second wiring through the second via,
a second substrate stacked on the first substrate, the second substrate including:
a second wiring layer, including:
a third wiring directly bonded to the first wiring; and
a fourth wiring directly bonded to the second wiring; and
a second semiconductor layer;
an on-chip lens disposed on the first substrate;
a first film disposed on the first isolation region; and
a second film disposed on the on-chip lens and attached to the first film.
19. The sensor according to claim 18 , wherein the first isolation region extends from a light incident side of the first semiconductor layer to a side of the first semiconductor substrate opposite to the light incident side.
20. The sensor according to claim 18 , further comprising a vertical hole extending from a light incident side of the first semiconductor layer to a metal pad disposed in the first wiring layer.
21. The sensor according to claim 18 , further comprising a first light-shielding film extending from an inside of a second isolation region toward a first region,
wherein a part of the first light-shielding film is attached to the first region and the first light-shielding film includes at least one of tungsten, aluminum, copper or polysilicon.
22. The sensor according to claim 18 , further comprising a conductive film between the first isolation region and the second avalanche photodiode.
23. The sensor according to claim 18 , further comprising:
a first light shielding film on a same surface of the first substrate as the on-chip lens;
a first via electrically connected to the first light shielding film; and
a second via electrically connected to the first isolation region.
24. A sensor, comprising:
a first substrate, including:
a first semiconductor layer, including:
a first avalanche photodiode including a first cathode and a first anode;
a second avalanche photodiode including a second cathode and a second anode; and
a first isolation region disposed between the first avalanche photodiode and the second avalanche photodiode, the first isolation region including:
a trench including a first portion disposed at a light incident side of the first semiconductor layer and a second portion disposed at a side of the first semiconductor layer opposite to the light incident side;
a first metal film disposed in the trench; and
a void disposed in the first metal film, and
a first wiring layer, including:
a first wiring;
a first via, wherein the first cathode is electrically connected to the first wiring through the first via;
a second wiring; and
a second via, the first anode electrically connected to the second wiring through the second via; and
a second substrate stacked on the first substrate, the second substrate including:
a second wiring layer, including:
a third wiring directly bonded to the first wiring; and
a fourth wiring directly bonded to the second wiring; and
a second semiconductor layer,
wherein a first width of a first portion of the trench is greater than a second width of a second portion of the trench.
25. The sensor according to claim 24 , wherein the first isolation region extends from a light incident side of the first semiconductor layer to a side of the first semiconductor layer opposite to the light incident side and is disposed through the first semiconductor layer.
26. The sensor according to claim 24 , further comprising a vertical hole extending from a light incident side of the first semiconductor layer to a metal pad disposed in the first wiring layer.
27. The sensor according to claim 24 , further comprising a first light-shielding film extending from an inside of a second isolation region toward a first region,
wherein a part of the first light-shielding film is attached to the first region and the first light-shielding film includes at least one of tungsten, aluminum, copper or polysilicon.
28. The sensor according to claim 24 , further comprising a conductive film between the first isolation region and the second avalanche photodiode.
29. The sensor according to claim 24 , further comprising:
an on-chip lens disposed on the first semiconductor layer;
a first light shielding film on a same surface of the first substrate as the on-chip lens;
a third via electrically connected to the first light shielding film; and
a fourth via electrically connected to the first isolation region.