Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device
An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor body comprising a first region of a first conductive type, an active region, a second region of a second conductive type and a coupling-out surface, wherein the first region, the active region and the second region are arranged along a stacking direction, wherein the active region extends from a rear surface opposite the coupling-out surface to the coupling-out surface along a longitudinal direction transverse to or perpendicular to the stacking direction, wherein the coupling-out surface is arranged plane-parallel to the rear surface, and wherein the coupling-out surface and the rear surface of the semiconductor body are produced by an etching process.
1. A method for manufacturing an optoelectronic semiconductor device, the method comprising:
providing a semiconductor body comprising a first region of a first conductive type, an active region designed to generate electromagnetic radiation and a second region of a second conductive type along a stacking direction, the active region extending between the first region and the second region along a longitudinal direction transverse or perpendicular to the stacking direction;
forming a first trench at least in places along the stacking direction and transversely to the longitudinal direction by a first etching process completely penetrating the first region and the active region, a coupling-out surface being provided for coupling-out electromagnetic radiation on a side face of the first trench facing the semiconductor body;
forming a second trench at a side of the semiconductor body opposite the first trench at least in places along the stacking direction of the semiconductor body and transverse to the longitudinal direction by the first etching process completely penetrating the first region and the active region, wherein a rear surface is formed on a side surface of the second trench facing the semiconductor body; and
smoothing the coupling-out surface and the rear surface by a second etching process,
wherein the coupling-out surface and the rear surface run parallel to an m-plane of a crystal of the semiconductor body, and
wherein providing the semiconductor body, forming the first trench, forming the second trench and smoothing the coupling-out surface and the rear surface are performed on optoelectronic devices in a wafer composite before separating the wafer composite.
2. The method according to claim 1 , wherein an etchant of the second etching process comprises KOH, NaOH, NH 4 OH, LiOH, TMAH, or NMP.
3. The method according to claim 1 , further comprising cleaning the coupling-out surface and the rear surface by ion cleaning.
4. The method according to claim 3 , further comprising coating the coupling-out surface and the rear surface with a semi-crystalline material.
5. The method according to claim 4 , wherein the coupling-out surface and the rear surface are coated with a dielectric material.
6. The method according to claim 4 , wherein the coupling-out surface and the rear surface are coated with a metal.
7. The method according to claim 1 , further comprising structuring a step of the first region via the coupling-out surface in the longitudinal direction by an etching process.
8. A method for manufacturing an optoelectronic semiconductor device, the method comprising:
providing a semiconductor body comprising a first region of a first conductive type, an active region designed to generate electromagnetic radiation and a second region of a second conductive type along a stacking direction, the active region extending between the first region and the second region along a longitudinal direction transverse or perpendicular to the stacking direction;
forming a first trench at least in places along the stacking direction and transversely to the longitudinal direction by a first etching process completely penetrating the first region and the active region, a coupling-out surface being provided for coupling-out electromagnetic radiation on a side face of the first trench facing the semiconductor body;
forming a second trench at a side of the semiconductor body opposite the first trench at least in places along the stacking direction of the semiconductor body and transverse to the longitudinal direction by the first etching process completely penetrating the first region and the active region, wherein a rear surface is formed on a side surface of the second trench facing the semiconductor body; and
smoothing the coupling-out surface and the rear surface by a second etching process, wherein the second etching process is a wet chemical etching process,
wherein the semiconductor body is based on a nitride compound semiconductor material, and
wherein providing the semiconductor body, forming the first trench, forming the second trench and smoothing the coupling-out surface and the rear surface are performed on optoelectronic devices in a wafer composite before separating the wafer composite.
9. The method according to claim 8 , further comprising cleaning the coupling-out surface and the rear surface by ion cleaning.
10. The method according to claim 9 , further comprising coating the coupling-out surface and the rear surface with a semi-crystalline material.
11. The method according to claim 10 , wherein the coupling-out surface and the rear surface are coated with a dielectric material.
12. The method according to claim 10 , wherein the coupling-out surface and the rear surface are coated with a metal.
13. The method according to claim 8 , further comprising structuring a step of the first region via the coupling-out surface in the longitudinal direction by an etching process.