Display devices

1. A display device, comprising:

a substrate having a surface comprising a display area;

a plurality of light-emitting diodes disposed on the display area of the substrate, wherein at least one of the plurality of light-emitting diodes comprises a contact electrode;

a conductive element disposed between the substrate and the at least one of the plurality of light-emitting diodes;

a plurality of first matrix elements disposed on the substrate;

an insulating layer covering at least part of the at least one of the plurality of light-emitting diodes; and

a plurality of bonding pads disposed on the substrate,

wherein the insulating layer has a cross-sectional sidewall profile, and at least a part of the cross-sectional sidewall profile of the insulating layer is in a shape of a curve, and one of the plurality of first matrix elements is disposed between adjacent two of the plurality of bonding pads,

wherein the at least one of the plurality of light-emitting diodes comprises a N-type semiconductor layer and a P-type semiconductor layer,

wherein the at least one of the plurality of light-emitting diodes comprises a lower electrode, and

wherein the lower electrode has a cross-sectional sidewall profile, and at least a part of the cross-sectional sidewall profile of the lower electrode is in a shape of a curve.

2. The display device as claimed in claim 1 , wherein the conductive element is a bump or an anisotropic conductive layer.

3. The display device as claimed in claim 1 , wherein one of the plurality of bonding pads is disposed between the conductive element and the substrate.

4. The display device as claimed in claim 3 , wherein the anisotropic conductive layer comprises a plurality of the conductive particles.

5. The display device as claimed in claim 4 , wherein a diameter of one of the plurality of the conductive particles between the contact electrode and the one of the plurality of bonding pads is smaller than a diameter of one of the plurality of the conductive particles not between the contact electrode and the plurality of bonding pads.

6. The display device as claimed in claim 2 , wherein the anisotropic conductive layer is configured to reduce a mixing of light.

7. The display device as claimed in claim 6 , wherein the anisotropic conductive layer is black.

8. The display device as claimed in claim 2 , wherein a height of one of the plurality of first matrix elements is greater than a maximum height of the anisotropic conductive layer.

9. The display device as claimed in claim 1 , wherein a maximum width of one of the plurality of second matrix elements is greater than a maximum width of one of the plurality of first matrix elements.

10. The display device as claimed in claim 1 , wherein the one of the plurality of first matrix elements is not overlapped with the plurality of light-emitting diodes in view of a normal direction of the surface.

11. The display device as claimed in claim 1 , wherein one of the plurality of second matrix elements overlaps the one of the plurality of first matrix elements.

12. The display device as claimed in claim 1 , further comprising a patterned phosphor layer disposed on the light-emitting diodes, wherein one of the plurality of second matrix elements is disposed in the patterned phosphor layer.

13. The display device as claimed in claim 12 , wherein the patterned phosphor layer comprises an opening corresponding to one of the plurality of light-emitting diodes.

14. The display device as claimed in claim 1 , wherein the first matrix elements or second matrix elements are black matrices.

15. The display device as claimed in claim 2 , wherein the anisotropic conductive layer has a cross-sectional sidewall profile and an angle between the surface of the substrate and the cross-sectional sidewall profile of the anisotropic conductive layer is less than 90 degrees.

16. The display device as claimed in claim 15 , wherein the angle between the surface of the substrate and the cross-sectional sidewall profile of the anisotropic conductive layer is greater than or equal to 30 degrees.

17. The display device as claimed in claim 1 , wherein the P-type semiconductor layer is formed between the contact electrode and the N-type semiconductor layer.

18. The display device as claimed in claim 1 , wherein the lower electrode is formed between the insulating layer and the N-type semiconductor layer.