Methods for processing a wide band gap semiconductor wafer, methods for forming a plurality of thin wide band gap semiconductor wafers, and wide band gap semiconductor wafers

1. A method for processing a wide band gap semiconductor wafer, the method comprising:

depositing a non-monocrystalline support layer comprising semiconductor material at a back side of a wide band gap semiconductor wafer, the wide band gap semiconductor wafer having a band gap larger than the band gap of silicon;

depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer; and

splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer comprising at least a part of the epitaxial layer, and a remaining wafer comprising the non-monocrystalline support layer.

2. The method of claim 1 , wherein a thermal expansion coefficient of the non-monocrystalline support layer differs from a thermal expansion coefficient of the wide band gap semiconductor wafer by at most 10% of the thermal expansion coefficient of the wide band gap semiconductor wafer.

3. The method of claim 1 , wherein the non-monocrystalline support layer is deposited at a deposition rate of at least 50 μm/hour.

4. The method of claim 1 , wherein the non-monocrystalline support layer is a poly-silicon carbide layer or a molybdenum layer.

5. The method of claim 1 , wherein a total thickness of the remaining wafer including the non-monocrystalline support layer is at least 200 μm and at most 1500 μm.

6. The method of claim 1 , wherein a protective layer is located at the front side of the wide band gap semiconductor wafer during the depositing of the non-monocrystalline support layer.

7. The method of claim 1 , further comprising:

depositing a further non-monocrystalline support layer on the non-monocrystalline support layer of the remaining wafer.

8. The method of claim 7 , wherein a material of the further non-monocrystalline support layer differs from a material of the non-monocrystalline support layer.

9. The method of claim 7 , wherein a thickness of the remaining wafer including the non-monocrystalline support layer and the further non-monocrystalline support layer differs by at most 300 μm from a thickness of the wide band gap semiconductor wafer before the splitting of the wide band gap semiconductor wafer.

10. The method of claim 7 , wherein the further non-monocrystalline support layer has a thickness of at least 90% and of at most 110% of the total thickness of the further device wafer.

11. The method of claim 1 , further comprising:

depositing a further epitaxial layer at a front side of the remaining wafer; and

splitting the remaining wafer along a further splitting region to obtain a further device wafer comprising the further epitaxial layer and a further remaining wafer comprising the non-monocrystalline support layer.

12. The method of claim 1 , further comprising:

forming a doping region of a wide band gap semiconductor device in the wide band gap semiconductor wafer after the depositing of the non-monocrystalline support layer.

13. The method of claim 1 , further comprising:

forming a metallization structure of the wide band gap semiconductor device at the front side of the wide band gap semiconductor wafer after the depositing of the non-monocrystalline support layer.

14. The method of claim 1 , wherein at least one of a gate trench and a gate electrode of a transistor is formed at the front side of the wide band gap semiconductor wafer before the splitting.

15. The method of claim 1 , wherein the device wafer is processed at temperatures of at most 1000° C. after the splitting.

16. The method of claim 1 , wherein the wide band gap semiconductor wafer is a silicon carbide wafer.

17. A method for forming a plurality of thin wide band gap semiconductor wafers, the method comprising:

depositing a first non-monocrystalline support layer comprising semiconductor material on a wide band gap semiconductor boule, the wide band gap semiconductor boule having a band gap larger than the band gap of silicon;

separating the wide band gap semiconductor boule along a first separating region to obtain a first thin wide band gap semiconductor wafer and a first remaining wide band gap semiconductor boule, the first thin wide band gap semiconductor wafer comprising the first non-monocrystalline support layer and a thin wide band gap semiconductor layer, a thickness of the wide band gap semiconductor boule being at least 2 times a thickness of the thin wide band gap semiconductor layer;

depositing a second non-monocrystalline support layer on the first remaining wide band gap semiconductor boule; and

separating the first remaining wide band gap semiconductor boule along a second separating region to obtain a second thin wide band gap semiconductor wafer and a second remaining wide band gap semiconductor boule, the second thin wide band gap semiconductor wafer comprising the second non-monocrystalline support layer and a thin wide band gap semiconductor layer.

18. The method of claim 17 , further comprising:

depositing a third non-monocrystalline support layer on the second remaining wide band gap semiconductor boule; and

separating the second remaining wide band gap semiconductor boule along a third separating region to obtain a third thin wide band gap semiconductor wafer and a third remaining wide band gap semiconductor boule, the third thin wide band gap semiconductor wafer comprising the third non-monocrystalline support layer and a thin wide band gap semiconductor layer.

19. The method of claim 17 , wherein the separating comprises at least one of splitting and sawing.