Hard mask for MTJ patterning

1. A method of forming an integrated chip, comprising:

forming magnetic tunnel junction (MTJ) layers over a bottom electrode layer;

forming a sacrificial dielectric layer over the MTJ layers;

patterning the sacrificial dielectric layer to define a cavity;

forming a glue layer within the cavity and a top electrode material onto an upper surface and interior sidewalls of the glue layer and within the cavity, wherein the top electrode material has outer sidewalls arranged at a first angle with respect to a bottom surface of the top electrode material, and wherein the first angle is an obtuse angle;

removing the sacrificial dielectric layer;

forming a masking layer over the top electrode material, the top electrode material and the glue layer extending from directly below the masking layer to laterally past opposing outermost sidewalls of the masking layer;

patterning the MTJ layers according to the top electrode material and the glue layer to define an MTJ stack after removing the sacrificial dielectric layer, wherein top surfaces of the top electrode material and the glue layer are exposed to an etchant used to pattern the MTJ layers and define the MTJ stack, and wherein the MTJ stack has sidewalls arranged at a second angle with respect to a bottom surface of the MTJ stack, and wherein the second angle is an acute angle; and

wherein the etchant that is used to pattern the MTJ layers etches the top electrode material and the glue layer with the masking layer in place, the etchant removing parts of the top electrode material and the glue layer.

2. The method of claim 1 , wherein the etchant used to pattern the MTJ layers reduces a height of the glue layer and causes the top electrode material to protrude outward from a top of the glue layer.

3. The method of claim 1 ,

wherein before patterning the MTJ layers the top surfaces of the top electrode material and the glue layer are substantially co-planar; and

wherein patterning the MTJ layers causes the top surfaces of the top electrode material and the glue layer to become vertically offset.

4. The method of claim 1 , further comprising:

forming sidewall spacers along opposing outermost sidewalls of the glue layer after defining the MTJ stack, the sidewall spacers extending below a bottom surface of the glue layer.

5. The method of claim 1 , further comprising:

forming an additional top electrode material within the cavity and directly between sidewalls of the top electrode material, wherein the additional top electrode material comprises a different material than the top electrode material, and wherein a bottommost surface of the additional top electrode material is arranged below a topmost surface of the sacrificial dielectric layer.

6. The method of claim 1 , wherein the glue layer is directly and vertically between the MTJ stack and a sidewall spacer arranged along an outermost sidewall of the glue layer.

7. The method of claim 1 , wherein the etchant used to pattern the MTJ layers causes the top electrode material to have a maximum width at a vertical height that is separated from a top and a bottom of the top electrode material by non-zero distances.

8. The method of claim 1 ,

wherein before patterning the MTJ layers the glue layer continuously extends from directly below the top electrode material to a top surface of the top electrode material; and

wherein patterning the MTJ layers causes the top surfaces of the top electrode material and the glue layer to become vertically offset.

9. The method of claim 1 , further comprising:

forming one or more sidewall spacers along opposing outermost sidewalls of the glue layer after defining the MTJ stack, the one or more sidewall spacers extending from a top surface that is below a top of the glue layer to a bottom surface that is below a bottom surface of the glue layer and the top of the glue layer being below a top of the top electrode material.

10. A method of forming an integrated chip, comprising:

forming magnetic tunnel junction (MTJ) layers over a bottom electrode layer;

depositing a sacrificial layer over the MTJ layers;

etching the sacrificial layer to form a cavity defined by sidewalls of the sacrificial layer;

depositing a glue layer onto and between the sidewalls of the sacrificial layer defining the cavity;

forming a conductive material over the glue layer and within the cavity, wherein the glue layer contacts sidewalls and a bottom surface of the conductive material;

removing the sacrificial layer;

forming a masking layer over the conductive material, the conductive material and the glue layer extending from directly below the masking layer to laterally past opposing outermost sidewalls of the masking layer;

patterning the MTJ layers according to the conductive material and the glue layer to define a magnetic tunnel junction (MTJ) stack, wherein a patterning process used to define the MTJ stack reduces a height of the glue layer and causes the conductive material to protrude outward from a top of the glue layer; and

wherein the patterning process etches the conductive material and the glue layer with the masking layer in place and removes parts of the conductive material and the glue layer.

11. The method of claim 10 , wherein the patterning process used to define the MTJ stack causes the glue layer and the conductive material, which have substantially equal heights prior to the patterning process, to have different heights.

12. The method of claim 10 ,

wherein the glue layer has a first height measured from the bottom surface of the conductive material to a top surface of the glue layer, after removing the sacrificial layer, which is substantially equal to a second height of the conductive material; and

wherein after patterning the MTJ layers, the glue layer has a third height measured from the bottom surface of the conductive material to the top surface of the glue layer that is less than the second height.

13. The method of claim 10 , wherein the conductive material has sidewalls arranged at a first angle with respect to the bottom surface of the conductive material, wherein the first angle is an obtuse angle.

14. The method of claim 10 , further comprising:

depositing a sidewall spacer layer over the conductive material;

patterning the sidewall spacer layer to form a sidewall spacer surrounding the MTJ stack, wherein patterning the sidewall spacer layer exposes a top surface of the conductive material and a top surface of the bottom electrode layer; and

etching the bottom electrode layer using the conductive material and the sidewall spacer as a mask, wherein the sidewall spacer continuously extends from the conductive material to the top surface of the bottom electrode layer after the etching of the bottom electrode layer.

15. The method of claim 10 ,

wherein after forming the conductive material within the cavity, a top surface of the conductive material meets a sidewall of the conductive material at an angled corner; and

wherein after patterning of the MTJ layers according to the conductive material, the top surface of the conductive material meets the sidewall of the conductive material at a rounded corner.

16. The method of claim 10 , wherein the patterning of the MTJ layers comprises using an etchant to remove portions of the MTJ layers, and wherein a top surface of the glue layer is exposed to the etchant.

17. A method comprising:

forming magnetic tunnel junction (MTJ) layers over a bottom electrode layer;

forming a sacrificial dielectric layer over the MTJ layers;

patterning the sacrificial dielectric layer to form a cavity within the sacrificial dielectric layer;

forming a top electrode material within the cavity of the sacrificial dielectric layer;

performing a planarization process to remove portions of the top electrode material arranged above a topmost surface of the sacrificial dielectric layer;

removing the sacrificial dielectric layer;

forming a mask over the top electrode material, the top electrode material extending from directly below the mask to laterally past opposing outermost sidewalls of the mask;

performing a removal process to remove portions of the MTJ layers according to the top electrode material to define a MTJ stack, wherein an etchant, which is used in the removal process, removes more of the top electrode material along outer edges of the top electrode material than in a central region of the top electrode material so as to give the top electrode material a sloped profile and wherein the etchant used in the removal process etches an uppermost surface of the top electrode material with the mask in place and removes parts of the top electrode material;

forming a sidewall spacer layer over the bottom electrode layer, the MTJ stack, and the top electrode material;

performing a first removal process to remove substantially horizontal portions of the sidewall spacer layer to form sidewall spacers surrounding outer sidewalls of the MTJ stack and the top electrode material; and

performing a second removal process to remove peripheral portions of the bottom electrode layer according to the sidewall spacers and the top electrode material.

18. The method of claim 17 , further comprising:

forming a glue layer on surfaces of the sacrificial dielectric layer defining the cavity, wherein the top electrode material is formed on the glue layer;

forming the mask over the top electrode material, the top electrode material and the glue layer extending from directly below the mask to laterally past the opposing outermost sidewalls of the mask; and

wherein the etchant that is used in the removal process etches the top electrode material and the glue layer with the mask in place, the etchant removing the parts of the top electrode material and parts of the glue layer.

19. The method of claim 17 , further comprising:

forming a dielectric structure around and over the MTJ stack and the top electrode material; and

forming an interconnect layer that extends through the dielectric structure and is arranged over and coupled to the top electrode material.

20. The method of claim 17 , wherein the sidewall spacers have a first inner sidewall that is arranged laterally beside the top electrode material, wherein the sidewall spacers have a second inner sidewall that is arranged laterally beside the MTJ stack and below the first inner sidewall, and wherein the first inner sidewall meets the second inner sidewall at an obtuse angle.