Optoelectronic semiconductor device and method for manufacturing an optoelectronic semiconductor device
An optoelectronic semiconductor device and a method for manufacturing an optoelectronic semiconductor device are disclosed. In an embodiment, an optoelectronic semiconductor device includes a semiconductor body having an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction, and a wavelength conversion element having conversion regions, the conversion regions optically separated from one another by metallic separators, wherein the wavelength conversion element is arranged downstream of the semiconductor body in the main radiation direction of the active region, wherein the active region comprises a plurality of independently controllable emission regions, and wherein the emission regions are at least partially aligned with the conversion regions and explicitly assigned to the conversion regions.
1. An optoelectronic semiconductor device comprising:
a one-piece semiconductor body comprising an active region configured to generate electromagnetic radiation and a coupling-out surface along a main radiation direction; and
a wavelength conversion element having conversion regions, the conversion regions optically separated from one another by metallic separators,
wherein the wavelength conversion element is arranged downstream of the semiconductor body in the main radiation direction of the active region,
wherein the active region comprises a plurality of independently controllable emission regions, and
wherein the emission regions are at least partially aligned with the conversion regions and assigned to the conversion regions.
2. The optoelectronic semiconductor device according to claim 1 , wherein each emission region is assigned to exactly one conversion region.
3. The optoelectronic semiconductor device according to claim 1 , wherein different converter materials are arranged in different conversion regions.
4. The optoelectronic semiconductor device according to claim 3 , wherein the different conversion regions comprise a first region configured to emit electromagnetic radiation in a green spectral range, a second region configured to emit electromagnetic radiation in a red spectral range, and a third region configured to emit electromagnetic radiation in a blue spectral range.
5. The optoelectronic semiconductor device according to claim 1 , wherein the emission regions and the conversion regions have an extension in a direction transverse to the main radiation direction in a range of 200 μm to 300 μm.
6. The optoelectronic semiconductor device according to claim 1 , wherein the wavelength conversion element has an extension in the main radiation direction in a range of 5 μm to 20 μm.
7. The optoelectronic semiconductor device according to claim 6 , wherein the metallic separators comprise a reflective layer.
8. The optoelectronic semiconductor device according to claim 7 , wherein the reflective layer of the metallic separators is a dielectric mirror with a multilayer structure.
9. The optoelectronic semiconductor device according to claim 1 , wherein the metallic separators form a grid, which divides the wavelength conversion element into the conversion regions.
10. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor body is divided into the emission regions by an insulating grid embedded within the semiconductor body.
11. The optoelectronic semiconductor device according to claim 10 , wherein the metallic separators completely penetrate the wavelength conversion element on a side facing away from the semiconductor body.
12. The optoelectronic semiconductor device according to claim 1 , wherein the wavelength conversion element comprises a matrix material comprising silicone, and wherein the matrix material is filled with particles of a converter material.
13. The optoelectronic semiconductor device according to claim 1 , wherein the wavelength conversion element comprises a matrix material comprising silicone, epoxy and a further polymer, and wherein the matrix material is filled with particles of a converter material.
14. The optoelectronic semiconductor device according to claim 1 , wherein the wavelength conversion element comprises a matrix material comprising an inorganic sol-gel material, and wherein the matrix material is filled with particles of a converter material.
15. The optoelectronic semiconductor device according to claim 14 , wherein the inorganic sol-gel material comprises silicon oxide, titanium oxide, zinc oxide, aluminum oxide, hafnium oxide or zirconium oxide.
16. The optoelectronic semiconductor device according to claim 1 , wherein the wavelength conversion element is a ceramic wavelength conversion element.
17. The optoelectronic semiconductor device according to claim 1 , wherein the wavelength conversion element comprises a matrix material comprising epoxy, and wherein the matrix material is filled with particles of a converter material.