Light-emitting device having self-cooled semiconductor laser
A light-emitting device having a self-cooled semiconductor laser having a laser cavity.
1. A light-emitting device comprising:
a self-cooled semiconductor laser, said self-cooled semiconductor laser comprising:
a laser resonator with a waveguide having a core and bound by a slab photonic-crystal structure that is defined in a cubic, hexagonal, or complex photonic-crystal lattice fabricated in the same structure as said semiconductor laser;
nanoemitters having anti-Stokes photoluminescence when excited by an internal laser emission, said nanoemitters are located in said core of said waveguide;
said waveguide made of a wider-bandgap semiconductor material than said nanoemitters; and
wherein said nanoemitters are quantum dots.
2. The light-emitting device of claim 1 , wherein said laser resonator is a Fabry-Perot cavity.
3. The light-emitting device of claim 1 , wherein said laser resonator is a distributed-feedback cavity.
4. The light-emitting device of claim 1 , wherein said laser resonator is a distributed Bragg reflector cavity.
5. The device of claim 1 , where said laser resonator is a ring cavity.
6. The light-emitting device of claim 1 , wherein said self-cooled semiconductor laser is an injection-lockable ring laser, comprising a ring laser, an injecting waveguide used to collect light from an external laser source and to deliver it to the ring laser, a waveguide directional output coupler proximate, in the lateral direction, to the cavity of the ring laser and used to collect its output; all monolithically integrated on the same substrate, and said ring laser has whistle geometry.
7. The light-emitting device of claim 1 , wherein said laser resonator and said slab photonic-crystal structure are monolithically integrated on a substrate made of III-V or II-VI semiconductor materials.
8. The light-emitting device of claim 1 , wherein said laser resonator and said slab photonic-crystal structure are monolithically integrated on a silicon-on-insulator substrate.
9. The device of claim 1 , wherein said spontaneous emission is further confined in the vertical direction by one-dimensional stacks of distributed-Bragg-reflectors fabricated below and above said slab photonic-crystal laser cavity.
10. The light-emitting device of claim 9 , wherein the peak reflectivity and bandwidth of the said distributed-Bragg-reflectors spectrally match the spontaneous emission circulating inside the photonic-crystal laser cavity.
11. A light-emitting device comprising:
a self-cooled semiconductor laser, said self-cooled semiconductor laser comprising;
a laser resonator with a waveguide having a core and bound by a slab photonic-crystal structure that is defined in a cubic, hexagonal, or complex photonic-crystal lattice fabricated in the same structure as said semiconductor laser;
nanoemitters having anti-Stokes photoluminescence when excited by an internal laser emission, said nanoemitters are located in said core of said waveguide;
said waveguide made of a wider-bandgap semiconductor material than said nanoemitters; and
wherein said nanoemitters are multiple quantum wells.
12. The light-emitting device of claim 11 , wherein said laser resonator is a Fabry-Perot cavity.
13. The light-emitting device of claim 11 , wherein said laser resonator is a distributed-feedback cavity.
14. The light-emitting device of claim 11 , wherein said laser resonator is a distributed Bragg reflector cavity.
15. The device of claim 11 , where said laser resonator is a ring cavity.
16. The light-emitting device of claim 11 , wherein said self-cooled semiconductor laser is an injection-lockable ring laser, comprising a ring laser, an injecting waveguide used to collect light from an external laser source and to deliver it to the ring laser, a waveguide directional output coupler proximate, in the lateral direction, to the cavity of the ring laser and used to collect its output; all monolithically integrated on the same substrate, and said ring laser has whistle geometry.
17. The light-emitting device of claim 11 , wherein said laser resonator and said slab photonic-crystal structure are monolithically integrated on a substrate made of III-V or II-VI semiconductor materials.
18. The light-emitting device of claim 11 , wherein said laser resonator and the slab photonic-crystal structure are monolithically integrated on a silicon-on-insulator substrate.
19. The device of claim 11 , wherein said spontaneous emission is further confined in the vertical direction by one-dimensional stacks of distributed-Bragg-reflectors fabricated below and above said slab photonic-crystal laser cavity.
20. The light-emitting device of claim 19 , wherein the peak reflectivity and bandwidth of the said distributed-Bragg-reflectors spectrally match the spontaneous emission circulating inside the photonic-crystal laser cavity.