Semiconductor chip with reduced pitch conductive pillars
Various semiconductor chips and packages are disclosed. In one aspect, an apparatus is provided that includes a semiconductor chip that has a side, and plural conductive pillars on the side. Each of the conductive pillars includes a pillar portion that has an exposed shoulder facing away from the semiconductor chip. The shoulder provides a wetting surface to attract melted solder. The pillar portion has a first lateral dimension at the shoulder. A solder cap is positioned on the pillar portion. The solder cap has a second lateral dimension smaller than the first lateral dimension.
1. An apparatus, comprising:
a semiconductor chip having a side;
plural conductive pillars on the side, each of the conductive pillars including a pillar portion having an exposed shoulder facing away from the semiconductor chip, the shoulder providing a wetting surface to attract melted solder, the pillar portion having a first lateral dimension at the shoulder, the pillar portion including a pillar base portion and a pillar barrier layer positioned on the pillar base portion, the pillar barrier layer having a central portion and a ring portion separated from the central portion by a gap, the ring portion having the exposed shoulder, the gap providing a space to attract the melted solder; and
a solder cap positioned on the pillar barrier layer of each of the pillar portions, the solder cap having a second lateral dimension smaller than the first lateral dimension.
2. The apparatus of claim 1 , comprising an underbump metallization (UBM) seed layer positioned beneath each of the pillar base portions.
3. The apparatus of claim 2 , comprising a polymer layer positioned beneath each of the UBM seed layers.
4. The apparatus of claim 1 , wherein the side of the semiconductor chip includes a dielectric layer beneath each of the pillar base portions and having a dielectric constant of less than about 2.7.
5. The apparatus of claim 1 , wherein the pillar barrier layers comprise nickel or nickel-vanadium.
6. The apparatus of claim 1 , comprising a circuit board, the semiconductor chip being mounted on the circuit board.
7. An apparatus, comprising:
a package substrate having conductor structures; and
a semiconductor chip mounted on the package substrate, the semiconductor chip having plural conductive pillars electrically connected to the conductor structures, each of the conductive pillars including a pillar portion having an exposed shoulder facing away from the semiconductor chip, the shoulder providing a wetting surface to attract melted solder, the pillar portion having a first lateral dimension at the shoulder, the pillar portion including a pillar base portion and a pillar barrier layer positioned on the pillar base portion, the pillar barrier layer having a central portion and a ring portion separated from the central portion by a gap, the ring portion having the exposed shoulder, the gap providing a space to attract the melted solder, and a solder cap positioned on the pillar portion, the solder cap having a second lateral dimension smaller than the first lateral dimension.
8. The apparatus of claim 7 , comprising an underbump metallization (UBM) seed layer positioned beneath each of the pillar base portions.
9. The apparatus of claim 8 , comprising a polymer layer positioned beneath each of the UBM seed layers.
10. The apparatus of claim 7 , wherein the side of the semiconductor chip includes a dielectric layer beneath each of the pillar base portions and having a dielectric constant of less than about 2.7.
11. The apparatus of claim 7 , wherein the pillar barrier layers comprise nickel or nickel-vanadium.
12. The apparatus of claim 7 , wherein the conductive pillars have a circular, oval, square, rectangular or some other polygon footprint.
13. A method of manufacturing, comprising:
fabricating plural conductive pillars on a side of a semiconductor chip, each of the conductive pillars including a pillar portion having an exposed shoulder facing away from the semiconductor chip, the shoulder providing a wetting surface to attract melted solder, the pillar portion having a first lateral dimension at the shoulder, the pillar portion including a pillar base portion and a pillar barrier layer positioned on the pillar base portion, the pillar barrier layer having a central portion and a ring portion separated from the central portion by a gap, the ring portion having the exposed shoulder, the gap providing a space to attract the melted solder; and
placing a solder cap on each of the pillar barrier layers of each of the pillar portions, each of the solder caps having a second lateral dimension smaller than the first lateral dimension.
14. The method of claim 13 , wherein the pillar barrier layer is fabricated by applying a photoresist mask positioned on the pillar base portion, patterning the mask with a central opening over the pillar base portion and an annular opening over the pillar portion and surrounding the central opening and plating pillar barrier layer, the ring portion plating into the annular opening.
15. The method of claim 13 , comprising fabricating an underbump metallization (UBM) seed layer positioned beneath each of the pillar base portions.
16. The method of claim 13 , comprising a polymer layer positioned beneath each of the UBM seed layers.
17. The method of claim 13 , wherein the side of the semiconductor chip includes a dielectric layer beneath each of the pillar base portions and having a dielectric constant of less than about 2.7.
18. The method of claim 13 , wherein the pillar barrier layers comprise nickel or nickel-vanadium.
19. The method of claim 13 , comprising mounting the semiconductor chip on a circuit board.