IP Library Granted Patent US 11,396,081
Granted Patent B2
US 11,396,081 · App. 16/415,464 · Granted Jul 26, 2022

Chemical mechanical polishing pad

Inventors: Bainian Qian (Newark, DE); Marty W. DeGroot (Middletown, DE)
Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
B24B37/24H01L21/30625H01L21/31053
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Quick Facts
Patent No.
US 11,396,081
App. No.
16/415,464
Granted
Jul 26, 2022
Kind
B2
Abstract

A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.

Claims (10)

1. A chemical mechanical polishing pad adapted for polishing a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate, comprising:

a polishing layer adapted for polishing a substrate selected from the group consisting of at least one of a magnetic substrate, an optical substrate and a semiconductor substrate having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, comprising:

an isocyanate terminated urethane prepolymer having 8.75 to 9.25 wt % unreacted NCO groups; and,

a curative system consisting essentially of:

20 to 30 wt % of a high molecular weight polyol curative, wherein the high molecular weight polyol curative has a number average molecular weight, Mn, of 10,000 to 12,000; and wherein the high molecular weight polyol curative has an average of 6 hydroxyl groups per molecule; and,

70 to 80 wt % of a 4,4′-methylene-bis-(2-chloroaniline) (MbOCA) difunctional curative wherein the polishing layer exhibits a density of greater than 0.6 g/cm 3 ; a Shore D hardness of 40 to 60; an elongation to break of 125 to 300%; a G′ 30/90 ratio of 1.5 to 4; a tensile modulus of 100 to 300 (MPa); a wet cut rate of 4 to 10 μm/min; and, a 300 mm TEOS removal rate to Shore D hardness ratio (TEOS 300-RR /Shore D hardness) of ≥28.

2. The chemical mechanical polishing pad of claim 1 , wherein the curative system has a plurality of reactive hydrogen groups and the isocyanate terminated urethane prepolymer has a plurality of unreacted NCO groups; and, wherein a stoichiometric ratio of the reactive hydrogen groups to the unreacted NCO groups is 0.85 to 1.15.

3. The chemical mechanical polishing pad of claim 1 , wherein the isocyanate terminated urethane prepolymer has 8.95 to 9.25 unreacted NCO groups.

4. The chemical mechanical polishing pad of claim 1 , wherein the polishing surface has a spiral groove pattern formed therein.

5. The chemical mechanical polishing pad of claim 1 , wherein the MN of the high molecular weight polyol curative is about 11,400.

Assignments (4)
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 073515/0243 →
SECURITY INTEREST Recorded Nov 3, 2025
From: QNITY ELECTRONICS, INC.
To: U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 073517/0298 →
CHANGE OF NAME Recorded Jun 27, 2025
From: ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC.
To: DUPONT ELECTRONIC MATERIALS HOLDING, INC.
Reel/Frame 071765/0928 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 12, 2019
From: QIAN, BAINIAN; DEGROOT, MARTY W.
To: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.; DOW GLOBAL TECHNOLGIES LLC
Reel/Frame 049734/0812 →