Pre-molded substrate, method of manufacturing pre-molded substrate, and hollow type semiconductor device
A hollow type semiconductor device has a pre-molded substrate ( 15 ) in which an element mounting portion, top surfaces of inner leads ( 2 ), and a top surface of frame-shaped wiring ( 7 ) are exposed on a first surface of a resin sealing body ( 6 ), and back surfaces of outer leads ( 3 ) and a back surface of a first frame-shaped wall ( 8 ) are exposed on a back surface of the resin sealing body ( 6 ). A hollow sealing body ( 14 ) including a second frame-shaped wall ( 9 ) and a sealing plate ( 4 ) is provided on the pre-molded substrate ( 15 ). The second frame-shaped wall ( 9 ) and the sealing plate ( 4 ) enclose a hollow portion ( 13 ) in which a semiconductor element ( 1 ) is kept.
1. A pre-molded substrate, comprising:
an element mounting portion;
an inner lead provided around the element mounting portion;
a frame-shaped wiring provided around the element mounting portion and the inner lead;
an outer lead provided in contact with a back surface of the inner lead;
a first frame-shaped wall provided in contact with a back surface of the frame-shaped wiring; and
a resin sealing body provided between the inner lead and the frame-shaped wiring and between the outer lead and the first frame-shaped wall,
the element mounting portion, a top surface of the inner lead, and a top surface of the frame-shaped wiring being exposed on a first surface of the resin sealing body, and
a back surface of the outer lead and a back surface of the first frame-shaped wall being exposed on a second surface which is a surface opposite from the first surface.
2. The pre-molded substrate according to claim 1 , wherein the inner lead is larger in size than the outer lead in plan view.
3. The pre-molded substrate according to claim 1 , wherein the frame-shaped wiring is larger in size than the first frame-shaped wall in plan view.
4. The pre-molded substrate according to claim 1 , wherein the outer lead and the first frame-shaped wall are each formed from one of a single-layer material having a layer of one of metals that is selected from the group consisting of gold, silver, copper, nickel, aluminum, tin, and palladium; a multi-layer metal material in which a plurality of materials selected from the metals are layered; and an alloy of a plurality of materials selected from the metals.
5. A hollow type semiconductor device, comprising:
a semiconductor element;
an element mounting portion supporting the semiconductor element;
an inner lead provided around the element mounting portion, and electrically connected to the semiconductor element;
a frame-shaped wiring provided around the element mounting portion and the inner lead;
an outer lead provided in contact with a back surface of the inner lead;
a first frame-shaped wall provided in contact with a back surface of the frame-shaped wiring;
a resin sealing body provided between the inner lead and the frame-shaped wiring, and between the outer lead and the first frame-shaped wall;
a second frame-shaped wall provided in contact with a surface of the frame-shaped wiring opposite from the back surface of the frame-shaped wiring; and
a sealing plate provided in contact with a surface of the second frame-shaped wall opposite from a surface on which the second frame-shaped wall is in contact with the frame-shaped wiring,
the element mounting portion, the inner lead, and the frame-shaped wiring being exposed on a first surface of the resin sealing body, and the outer lead and the first frame-shaped wall being exposed on a second surface which is a surface opposite from the first surface.
6. The hollow type semiconductor device according to claim 5 , wherein the sealing plate has an outer edge portion, and inner side surfaces of the outer edge portion are in contact with outer side surfaces of the second frame-shaped wall.
7. The hollow type semiconductor device according to claim 5 , further comprising a second resin sealing body provided to cover outer surfaces of the sealing plate and outer surfaces of the second frame-shaped wall.
8. The hollow type semiconductor device according to claim 6 , further comprising a second resin sealing body provided to cover outer surfaces of the sealing plate and outer surfaces of the second frame-shaped wall.
9. The hollow type semiconductor device according to claim 5 , wherein the second frame-shaped wall is formed from one of a single-layer material having a layer of one of metals that is selected from the group consisting of gold, silver, copper, nickel, aluminum, tin, and palladium; a multi-layer metal material in which a plurality of materials selected from the metals are layered; and an alloy of a plurality of materials selected from the metals.
10. The hollow type semiconductor device according to claim 6 , wherein the second frame-shaped wall is formed from one of a single-layer material having a layer of one of metals that is selected from the group consisting of gold, silver, copper, nickel, aluminum, tin, and palladium; a multi-layer metal material in which a plurality of materials selected from the metals are layered; and an alloy of a plurality of materials selected from the metals.
11. The hollow type semiconductor device according to claim 7 , wherein the second frame-shaped wall is formed from one of a single-layer material having a layer of one of metals that is selected from the group consisting of gold, silver, copper, nickel, aluminum, tin, and palladium; a multi-layer metal material in which a plurality of materials selected from the metals are layered; and an alloy of a plurality of materials selected from the metals.
12. The hollow type semiconductor device according to claim 8 , wherein the second frame-shaped wall is formed from one of a single-layer material having a layer of one of metals that is selected from the group consisting of gold, silver, copper, nickel, aluminum, tin, and palladium; a multi-layer metal material in which a plurality of materials selected from the metals are layered; and an alloy of a plurality of materials selected from the metals.
13. The hollow type semiconductor device according to claim 5 , wherein the sealing plate is formed from one of a single material that is one of an inorganic material including a metal material and glass and an organic material including resin; and a multi-layer material in which a plurality of materials selected from the materials of the single material are layered.
14. The hollow type semiconductor device according to claim 6 , wherein the sealing plate is formed from one of a single material that is one of an inorganic material including a metal material and glass and an organic material including resin; and a multi-layer material in which a plurality of materials selected from the materials of the single material are layered.
15. The hollow type semiconductor device according to claim 7 , wherein the sealing plate is formed from one of a single material that is one of an inorganic material including a metal material and glass and an organic material including resin; and a multi-layer material in which a plurality of materials selected from the materials of the single material are layered.
16. The hollow type semiconductor device according to claim 8 , wherein the sealing plate is formed from one of a single material that is one of an inorganic material including a metal material and glass and an organic material including resin; and a multi-layer material in which a plurality of materials selected from the materials of the single material are layered.