Variable resistance memory device and method of manufacturing the same
A method of manufacturing a variable resistance memory device may include: forming a memory cell including a variable resistance pattern on a substrate; performing a first process to deposit a first protective layer covering the memory cell; and performing a second process to deposit a second protective layer on the first protective layer. The first process and the second process may use the same source material and the same nitrogen reaction material, and a nitrogen content in the first protective layer may be less than a nitrogen content in the second protective layer.
1. A variable resistance memory device comprising:
a first conductive line provided on a substrate;
a second conductive line intersecting the first conductive line on the first conductive line;
a memory cell comprising a variable resistance pattern and provided at an intersection point of the first conductive line and the second conductive line; and
a protective layer sealing the memory cell on the substrate and comprising silicon nitride (SiNx),
wherein a nitrogen content in the protective layer increases as a distance from an interface between the protective layer and the memory cell increases, and
wherein the nitrogen content in the protective layer continuously changes as the distance from the interface between the protective layer and the memory cell.
2. The variable resistance memory device of claim 1 , wherein a density of the protective layer increases as the distance from the interface between the protective layer and the memory cell increases.
3. The variable resistance memory device of claim 1 , wherein the protective layer comprises undoped silicon nitride (undoped-SiNx).
4. The variable resistance memory device of claim 1 , wherein the protective layer is in contact with a sidewall of the memory cell.
5. The variable resistance memory device of claim 1 , wherein the memory cell further comprises a switching pattern, and
wherein the variable resistance pattern and the switching pattern are connected in series to each other.
6. The variable resistance memory device of claim 1 , further comprising a contact penetrating the protective layer to connect the memory cell and the second conductive line.
7. The variable resistance memory device of claim 1 , wherein the nitrogen content in the protective layer continuously changes as the distance from the interface between the protective layer and the memory cell.
8. The variable resistance memory device of claim 1 , the protective layer comprising:
a first protective layer covering at least a portion of the memory cell; and
a second protective layer formed on the first protective layer,
wherein a nitrogen content in the first protective layer is less than a nitrogen content in the second protective layer.
9. The variable resistance memory device of claim 8 , wherein the first protective layer is provided along a surface of the variable resistance pattern, and
wherein the second protective layer is spaced apart from the variable resistance pattern by the first protective layer.
10. The variable resistance memory device of claim 1 , further comprising an insulating layer covering the variable resistance pattern disposed in a lower portion of the memory cell,
wherein the protective layer covers a sidewall of an upper portion of the memory cell and a top surface of the insulating layer.
11. The variable resistance memory device of claim 1 , wherein the protective layer is interposed between the variable resistance pattern and the second conductive line.
12. The variable resistance memory device of claim 1 , further comprising a top electrode on the variable resistance pattern,
wherein the protective layer is disposed on side surfaces of the top electrode between the variable resistance pattern and the second conductive line.