Storage node shaping
Methods, apparatuses, and systems related to shaping a storage node material are described. An example method includes forming a pillar with a pattern of materials. The method further includes depositing a storage node material on a side of the pillar. The method further includes etching sacrificial materials within the pillar. The method further includes etching the storage node material in a direction from the pillar into the storage node.
1. A method to shape a storage node material, comprising:
forming a pillar with a pattern of materials comprising sacrificial materials;
depositing a storage node material on a side of the pillar;
etching the sacrificial materials within the pillar; and
selectively etching the storage node material in a direction from the pillar into a center of the storage node material.
2. The method of claim 1 , wherein etching the storage node material comprises etching a sacrificial liner portion of the storage node material.
3. The method of claim 1 , further comprising etching the storage node material using a hydrofluoric acid.
4. The method of claim 1 , further comprising etching the storage node material, wherein the storage node material comprises of two materials.
5. The method of claim 4 , further comprising depositing a bottom electrode, wherein the bottom electrode comprises a first material formed from titanium nitride (TiN) material.
6. The method of claim 1 , wherein depositing the storage node material comprises depositing a bottom electrode.
7. The method of claim 6 , wherein depositing the bottom electrode comprises depositing a nitride material.
8. The method of claim 1 , further comprising depositing a dielectric fill over the storage node material.
9. A method to shape a storage node, comprising:
depositing a pattern of materials comprising sacrificial materials;
forming an opening in the pattern of materials;
depositing a storage node material within the opening;
recessing the sacrificial materials within the pillars; and
selectively recessing the storage node material in a direction from the pillars into the storage node.
10. The method of claim 9 , further comprising forming the pattern of materials from sacrificial oxide materials separated by nitride lattices.
11. The method of claim 9 , wherein depositing the storage node material comprises depositing an oxide material.
12. The method of claim 11 , wherein depositing the storage node material comprises depositing a ruthenium oxide (RuO) material.
13. The method of claim 9 , further comprising increasing a width of the pillars by a range between 0.2-5 nanometers (nm).
14. The method of claim 9 , wherein depositing the storage node material comprises depositing a first material formed from boron doped titanium nitride (TiBN) material.
15. A method to shape a storage node, comprising:
depositing a pattern of materials comprising sacrificial materials;
forming an opening in the pattern of materials;
etching sides of the pillars to remove a tapering of the opening;
depositing a titanium nitride (TiN) material on the sides of the pillars;
depositing a titanium silicon nitride (TiSiN) material on the sides of the pillars;
etching the sacrificial materials within the pillars;
etching the TiN in a direction from the opening into the storage node;
etching the TiN in a direction from the pillars into the storage node; and
depositing a dielectric fill over the etched TiN; and
depositing a top electrode over the dielectric fill.
16. The method of claim 15 , further comprising depositing the TiSiN material to etch away a diameter of the pillars.
17. The method of claim 16 , further comprising reducing a diameter of the opening by a range between 2-40 angstroms.
18. The method of claim 16 , further comprising doping the TiSiN material to have a silicon concentration of a range between 10 to 40%.
19. The method of claim 16 , further comprising etching the TiSiN using a hydrofluoric acid solution (HF).
20. The method of claim 18 , wherein depositing the TiSiN comprises varying silicon within the TiSiN material by controlling an etch rate of the TiSiN.