Semiconductor device

1. A semiconductor device, comprising:

a semiconductor substrate including a chip region and an edge region around the chip region;

a lower dielectric layer on the semiconductor substrate;

a chip pad on the lower dielectric layer of the chip region;

a process monitoring structure on the edge region, the process monitoring structure including:

a plurality of dummy metal structures spaced apart from each other in the lower dielectric layer,

a dummy metal pattern covering the dummy metal structures, and

a redistribution alignment pattern penetrating the upper dielectric layer and contacting the dummy metal pattern;

an upper dielectric layer on the lower dielectric layer, the upper dielectric layer covering the process monitoring structure and having an opening spaced apart from the process monitoring structure and exposing a portion of the lower dielectric layer on the edge region;

a redistribution chip pad that penetrates the upper dielectric layer on the chip region and is connected the chip pad; and

a redistribution spacer on an inner wall of the opening, the redistribution spacer including the same metallic material as that of the redistribution chip pad and that of the redistribute alignment pattern.

2. The semiconductor device as claimed in claim 1 , wherein the plurality of dummy metal structures each include:

a plurality of stacked dummy metal lines that extend in one direction; and

a plurality of dummy metal vias that are connected between the dummy metal lines.

3. The semiconductor device as claimed in claim 1 , wherein, when viewed in plan, the dummy metal pattern overlaps the plurality of dummy metal structures.

4. The semiconductor device as claimed in claim 1 , wherein the dummy metal pattern has a plurality of alignment holes that are spaced apart from each other, the alignment holes being filled with the upper dielectric layer.

5. The semiconductor device as claimed in claim 1 , wherein

the lower dielectric layer has a first thickness on the chip region, and

the portion of the lower dielectric layer has a second thickness that is less than the first thickness, the portion of the lower dielectric layer being exposed to the second opening.

6. The semiconductor device as claimed in claim 1 , wherein:

the dummy metal structures include a first metallic material, and

the dummy metal pattern includes a second metallic material that is different from the first metallic material.

7. The semiconductor device as claimed in claim 1 , wherein:

the upper dielectric layer includes:

a first upper dielectric layer that covers the chip pad; and

a second upper dielectric layer and a third upper dielectric layer that are stacked on the first upper dielectric layer, and

the second upper dielectric layer includes a dielectric material that is different from dielectric materials of the first upper dielectric layer and the third upper dielectric layer.

8. The semiconductor device as claimed in claim 1 , further comprising:

a semiconductor integrated circuit on the semiconductor substrate of the chip region; and

a plurality of metal lines and a plurality of metal vias in the lower dielectric layers of the chip region, the metal lines and the metal vias connecting the semiconductor integrated circuit to the chip pad.

9. The semiconductor device as claimed in claim 1 , further comprising a passivation layer on the upper dielectric layer of the chip region and exposing a portion of the redistribution chip pad.

10. The semiconductor device as claimed in claim 9 , wherein the passivation layer extends toward the edge region and covers the process monitoring structure.

11. The semiconductor device as claimed in claim 1 , wherein:

the lower dielectric layer has a first dielectric constant, and

the upper dielectric layer has a second dielectric constant less than the first dielectric constant.

12. The semiconductor device as claimed in claim 1 , wherein the redistribution alignment pattern includes the same metallic material as that of the redistribution chip pad.

13. A semiconductor device, comprising:

a semiconductor substrate including a chip region and an edge region around the chip region;

a lower dielectric layer on the semiconductor substrate;

a chip pad on the lower dielectric layer of the chip region;

a process monitoring structure on a portion of the edge region, the process monitoring structure including

a plurality of dummy metal structures spaced apart from each other in the lower dielectric layer, and

a dummy metal pattern covering the dummy metal structures;

an upper dielectric layer on the lower dielectric layer, the upper dielectric layer having a first opening that exposes the chip pad and a second opening spaced apart from the process monitoring structure and exposing a portion of the lower dielectric layer on the edge region;

a redistribution chip pad in the first opening and connected to the chip pad; and

a redistribution spacer on an inner wall of the second opening, the redistribution spacer including the same metallic material as that of the redistribution chip pad and that of the redistribute alignment pattern.

14. The semiconductor device of claim 13 , wherein:

the upper dielectric layer covers the dummy metal pattern, and

the process monitoring structure further includes a redistribution alignment pattern that penetrates the upper dielectric layer and is in contact with the dummy metal pattern.

15. The semiconductor device as claimed in claim 14 , wherein the redistribution alignment pattern includes the same metallic material as that of the redistribution chip pad.

16. The semiconductor device of claim 13 , wherein:

the lower dielectric layer has a first thickness on the chip region, and

the portion of the lower dielectric layer has a second thickness less than the first thickness, the portion of the lower dielectric layer being exposed to the second opening.

17. The semiconductor device as claimed in claim 13 , wherein:

the lower dielectric layer has a first dielectric constant, and

the upper dielectric layer has a second dielectric constant less than the first dielectric constant.

18. The semiconductor device of claim 13 , wherein

the dummy metal structures include a first metallic material, and

the dummy metal pattern includes a second metallic material different from the first metallic material.

19. The semiconductor device of claim 13 , wherein the dummy metal structures include:

a plurality of stacked dummy metal lines that extend in one direction; and

a plurality of dummy metal vias that are connected between the dummy metal lines.