Memory devices configured to provide external regulated voltages

1. A memory device, comprising:

one or more external inputs configured to receive a supply voltage having a first voltage level;

a voltage regulator configured to receive the supply voltage from the one or more external inputs and to output an output voltage having a second voltage level different from the first voltage level;

one or more memories configured to receive the output voltage from the voltage regulator; and

one or more external outputs configured to receive the output voltage from the voltage regulator and to supply the output voltage to one or more connected devices, wherein the one or more connected devices are external to the memory device.

2. The memory device of claim 1 ,

wherein the supply voltage is a first supply voltage,

wherein the one or more external inputs are a first one or more external inputs,

further comprising a second one or more external inputs configured to receive a second supply voltage having a third voltage level different from the first voltage level, and

wherein the voltage regulator is further configured to receive the second supply voltage from the second one or more external inputs.

3. The memory device of claim 1 ,

wherein the output voltage comprises a first output voltage and a second output voltage,

wherein the one or more memories are configured to receive the second output voltage from the voltage regulator, and

wherein the one or more external outputs are configured to receive the first output voltage from the voltage regulator and to supply the first output voltage to the one or more connected devices.

4. The memory device of claim 3 ,

wherein the one or more external outputs are a first one or more external outputs,

wherein the one or more connected devices comprise a first one or more connected devices,

further comprising a second one or more external outputs, and

wherein the second one or more external outputs are configured to receive the second output voltage from the voltage regulator and to supply the second output voltage to second one or more connected devices.

5. The memory device of claim 1 ,

wherein the voltage regulator comprises a first voltage regulator and a second voltage regulator,

wherein the output voltage comprises a first output voltage and a second output voltage,

wherein the one or more memories are configured to receive the first output voltage from the voltage regulator, and

wherein the one or more external outputs are configured to receive the second output voltage from the voltage regulator and to supply the second output voltage to the one or more connected devices.

6. The memory device of claim 1 , wherein the voltage regulator comprises a power management integrated circuit (PMIC) that includes one or more registers configured to store information corresponding to the output voltage.

7. The memory device of claim 6 , wherein the information comprises the second voltage level, a tolerance corresponding to the second voltage level, or a combination thereof.

8. The memory device of claim 6 , wherein the PMIC is configured to output the information in response to receiving a command from a connected host device.

9. The memory device of claim 6 , wherein the PMIC is configured to modify the information in response to receiving a command from a connected host device.

10. The memory device of claim 1 , wherein the memory device is a memory module, and wherein the one or more external inputs and the one or more external outputs are comprised by an edge connector of the memory module.

11. The memory device of claim 10 , wherein the memory module is a dual in-line memory module (DIMM).

12. The memory device of claim 1 ,

wherein the output voltage comprises a first output voltage and a second output voltage,

wherein the one or more memories comprise one or more volatile memories and one or more non-volatile memories,

wherein the one or more volatile memories are configured to receive the first output voltage from the voltage regulator, and

wherein the one or more non-volatile memories are configured to receive the second output voltage from the voltage regulator.

13. A method for operating a memory device, comprising:

providing a supply voltage having a first voltage level to the memory device;

generating from the supply voltage, with a voltage regulator of the memory device, an output voltage having a second voltage level different than the first voltage level; and

providing the output voltage to a device external to the memory device.

14. The method of claim 13 , wherein the device external to the memory device is a non-memory device.

15. The method of claim 13 , wherein the device external to the memory device is a memory device not including a voltage regulator.

16. The method of claim 13 , further comprising providing the output voltage to one or more memories of the memory device.

17. The method of claim 13 ,

wherein the output voltage comprises a first output voltage and a second output voltage,

wherein providing the output voltage to the device external to the memory device comprises providing the first output voltage to the device external to the memory device; and

further comprising providing the second output voltage to one or more memories of the memory device.

18. The method of claim 13 ,

wherein the supply voltage comprises a first supply voltage and a second output voltage,

wherein the output voltage comprises a first output voltage and a second output voltage,

wherein providing the output voltage to the device external to the memory device comprises providing the first output voltage to the device external to the memory device, and

further comprising providing the second output voltage to one or more memories of the memory device.

19. A method for operating a memory device, comprising:

receiving a supply voltage having a first voltage level at the memory device;

generating from the supply voltage, with a voltage regulator of the memory device, an output voltage having a second voltage level;

providing the output voltage from the memory device to a device external to the memory device;

receiving a command at the memory device to modify the output voltage;

in response to the command, modifying, with the voltage regulator, the output voltage to have a third voltage level; and

providing the modified output voltage from the memory device to the device external to the memory device,

wherein one or more of the second voltage level and the third voltage level are different than the first voltage level.