Plasma processing apparatus and plasma processing method
A plasma processing apparatus includes a processing chamber where a plasma processing is performed on a workpiece, a stage, an edge ring, a shield, and a driver. The stage has a placement surface on which the workpiece is placed inside the processing chamber. The edge ring is provided around the stage so as to surround the workpiece on the placement surface. The shield is capable of shielding a portion of the surface of the edge ring from plasma generated in the processing chamber. The driver changes the area of the edge ring exposed to the plasma by moving the shield relative to the edge ring.
1. A plasma processing apparatus comprising:
a plasma chamber;
a stage disposed in the plasma chamber and having a first portion and a second portion, the first portion supporting a workpiece, the second portion surrounding the first portion;
an edge ring made of a conductive material and disposed on the second portion of the stage, the edge ring having an outer sidewall;
upper and lower cover members made of an insulating material and disposed so as to surround the edge ring, the upper cover member being disposed on the lower cover member, the upper and lower cover members forming an inner sidewall facing the outer sidewall of the edge ring;
an annular shield member made of the insulating material and disposed between the outer sidewall of the edge ring and the inner sidewall of the upper and lower cover members, the annular shield member being retractable to a lowermost position in which an upper surface of the annular shield member is below a lower end of the edge ring and configured to shield a portion of the outer sidewall of the edge ring from a plasma generated in the plasma chamber; and
a driver configured to vertically move the annular shield member relative to the edge ring and at least one of the upper and lower cover members, thereby changing an exposed area to the plasma of the outer sidewall of the edge ring.
2. The plasma processing apparatus according to claim 1 , wherein the edge ring has a substantially cylindrical shape,
the annular shield member has a substantially cylindrical shape and is disposed around the edge ring, and
the driver is configured to move the annular shield member along a central axis of the edge ring, thereby changing an exposed area to the plasma of the outer side wall of the edge ring.
3. The plasma processing apparatus according to claim 2 , wherein the edge ring includes a first ring portion around the first portion of the stage and a second ring portion extending parallel to the central axis of the edge ring, and
the annular shield member protects at least a portion of an outer wall of the second ring portion from the plasma.
4. The plasma processing apparatus according to claim 3 , wherein the annular shield member includes a plurality of shield segments discretely disposed in a circumferential direction of the edge ring, and
the driver independently moves each of the shield segments relative to the edge ring.
5. The plasma processing apparatus according to claim 4 , wherein the driver is configured to move the annular shield member relative to the edge ring such that the area of the outer sidewall of the edge ring exposed to the plasma decreases with a plasma processing time.
6. The plasma processing apparatus according to claim 5 , further comprising:
a metal base supporting the stage,
wherein the annular shield member is accommodated in a recess formed in the base.
7. The plasma processing apparatus according to claim 1 , wherein the annular shield member includes a plurality of shield segments discretely disposed in a circumferential direction of the edge ring, and
the driver independently moves the shield segments relative to the edge ring.
8. The plasma processing apparatus according to claim 1 , wherein the driver is configured to move the annular shield member relative to the edge ring such that the area of the outer sidewall of the edge ring exposed to the plasma decreases with a plasma processing time.
9. The plasma processing apparatus according to claim 1 , further comprising:
a metal base supporting the stage,
wherein the annular shield member is accommodated in a recess formed in the base.
10. The plasma processing apparatus according to claim 1 , wherein the annular shield member is connected to the driver with three or more support rods.
11. The plasma processing apparatus according to claim 1 , wherein the annular shield member comprises quartz.
12. The plasma processing apparatus according to claim 1 , wherein a thickness of the annular shield member in a radial direction of the workpiece is larger than a thickness of a sheath area defined above the edge ring.
13. The plasma processing apparatus according to claim 1 , wherein the edge ring comprises at least one of silicon, carbon, or SiC, and
the upper cover member, the lower cover member, and the annular shield member comprise quartz.
14. The plasma processing apparatus according to claim 1 , wherein the driver is configured to vertically move the annular shield member upward relative to the edge ring and at least one of the upper and lower cover members, thereby decreasing an exposed area to the plasma of the outer sidewall of the edge ring with a plasma processing time.
15. The plasma processing apparatus according to claim 1 , wherein the annular shield member substantially contacts at least a portion of the outer sidewall of the edge ring.
16. The plasma processing apparatus according to claim 1 , wherein the exposed area to the plasma of the outer sidewall of the edge ring is decreased as the annular shield member moves upward from the lowermost position.
17. A plasma processing apparatus comprising:
a plasma chamber;
a stage disposed in the plasma chamber;
an edge ring made of a conductive material and disposed on the stage so as to surround a wafer disposed on the stage, the edge ring having an outer sidewall;
at least one cover member made of a first insulating material and disposed so as to surround the edge ring, the at least one cover member having an inner sidewall facing the outer sidewall of the edge ring;
an annular member made of a second insulating material and disposed between the outer sidewall of the edge ring and the inner sidewall of the at least one cover member, the annular member being retractable to a lowermost position in which an upper surface of the annular member is below a lower end of the edge ring; and
a driver configured to vertically move the annular member relative to the edge ring and the at least one cover member, thereby changing an exposed area of the outer sidewall of the edge ring.
18. The plasma processing apparatus according to claim 17 , wherein the edge ring comprises at least one of silicon, carbon, or SiC, and
the annular member comprises quartz.
19. The plasma processing apparatus according to claim 17 , wherein the exposed area of the outer sidewall of the edge ring is decreased as the annular member moves upward from the lowermost position.