Polymer brushes for extreme ultraviolet photolithography
A polymer brush with a plurality of repeat units wherein some portions of the repeat units have one or more grafting groups and some portions have one or more interface tuning groups is disclosed. The grafting groups are selected based on the identity of an inorganic substrate, and the interface tuning groups are selected based on the identity of a photoresist that will interact with the groups. A process of lithographic patterning and an electronic device comprising at least one integrated circuit formed by the process of lithographic patterning are disclosed as well. The process comprises providing an inorganic substrate, depositing the disclosed polymer brush onto the inorganic substrate, and depositing a photoresist onto the polymer brush. The process further comprises masking the photoresist with a photomask having a pattern, and applying energy to the masked photoresist to form an etch mask. The inorganic substrate is then etched.
1. A process of lithographic patterning, comprising:
providing an inorganic substrate;
depositing a polymer brush onto the inorganic substrate, wherein the polymer brush comprises:
a plurality of repeat units;
at least one portion of the plurality of repeat units having one or more grafting groups, wherein the one or more grafting groups are selected based on an identity of the inorganic substrate; and
at least one portion of the plurality of repeat units having one or more interface tuning groups, wherein the one or more interface tuning groups are selected based on an identity of a photoresist;
depositing the photoresist onto the polymer brush;
masking the photoresist with a photomask having a pattern;
applying energy from an energy source to the masked photoresist;
developing the photoresist to form an etch mask having the pattern; and
etching portions of the inorganic substrate exposed by the etch mask.
2. The process of claim 1 , wherein the energy source is a laser-driven tin plasma.
3. The process of claim 1 , wherein the energy is extreme ultraviolet light.
4. The process of claim 1 , wherein the one or more grafting groups are independently selected from a group consisting of alkynes, primary hydroxyls, secondary hydroxyls, acrylic acids, epoxies, alkenes, phosphonic acids, propargyls, phosphonic esters, amines, carboxylic acids, and alkoxysilanes.
5. The process of claim 1 , wherein the photoresist is an acrylic photoresist.
6. The process of claim 1 , wherein the photoresist is a hybrid photoresist.
7. The process of claim 1 , wherein the photoresist is a phenolic photoresist.
8. The process of claim 1 , wherein the inorganic substrate is an ultrathin inorganic hardmask.
9. The process of claim 1 , wherein the inorganic substrate comprises a material selected from a group consisting of silicon, titanium nitride, titanium oxides, titanium oxynitrides, tantalum nitride, hafnium oxides, niobium nitride, lanthanum oxide, silicon oxides, silicon oxynitrides, zirconium oxides, and tin oxides.