Electro-optically active device

1. A silicon based electro-optically active device comprising:

a silicon-on-insulator (SOI) waveguide;

an electro-optically active waveguide including an electro-optically active stack above an insulator layer and separated from the insulator layer by a seed layer, the electro-optically active waveguide being coupled to the SOI waveguide; and

a channel between the electro-optically active waveguide and the SOI waveguide,

wherein the channel is filled with a filling material with a refractive index greater than that of a material of a portion of the SOI waveguide forming a sidewall of the channel to thereby form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active waveguide.

2. The silicon based electro-optically active device of claim 1 including a silicon nitride liner, lining the sidewalls of the channel, said silicon nitride liner including a portion located between the SOI waveguide and the filling material.

3. The silicon based electro-optically active device of claim 1 , wherein the electro-optically active stack includes a multiple quantum well region.

4. The silicon based electro-optically active device of claim 1 , wherein the filling material is amorphous silicon.

5. The silicon based electro-optically active device of claim 1 , wherein the filling material is silicon-germanium (SiGe).

6. The silicon based electro-optically active device of claim 1 , wherein the electro-optically active stack has a parallelogramal or trapezoidal geometry.

7. The silicon based electro-optically active device of claim 1 , further comprising an epitaxial cladding layer located in-between a silicon substrate of the SOI waveguide and the electro-optically active stack which forms the electro-optically active waveguide.

8. The silicon based electro-optically active device of claim 7 , wherein an epitaxial material of the epitaxial cladding layer is silicon.

9. The silicon based electro-optically active device of claim 7 , wherein an epitaxial material of the epitaxial cladding layer is silicon-germanium (SiGe).

10. A method of producing a silicon based electro-optically active device, having the steps of:

providing a silicon-on-insulator (SOI) wafer including a silicon device layer above a BOX layer;

etching a cavity in the silicon device layer, the cavity extending through a first portion of the silicon device layer and leaving a second portion of the silicon device layer above the BOX layer;

epitaxially growing an electro-optically active stack on the second portion of the silicon device layer within the cavity, wherein the electro-optically active stack has a facet in a region adjacent to a sidewall of the cavity;

etching the region to thereby remove the facet and produce a channel between the sidewall and the electro-optically active stack; and

filling the channel with a filling material which has a refractive index which is greater than that of a material forming the sidewall.

11. The method of claim 10 , including a step, performed before filling the channel with the filling material, of lining the channel with a silicon nitride liner.

12. The method of claim 10 , wherein the electro-optically active stack includes a multiple quantum well region.

13. The method of claim 10 , wherein the filling material that the channel is filled with comprises amorphous silicon.

14. The method of claim 10 , wherein the filling material that the channel is filled with comprises silicon-germanium (SiGe).

15. The method of claim 10 , wherein the step of filling the channel is carried out by plasma-enhanced chemical vapour deposition.

16. The method of claim 10 , further including a step of planarizing the filling material through chemical-mechanical polishing.

17. The method of claim 10 , wherein:

the electro-optically active stack has a second facet in a second region adjacent to an opposite sidewall of the cavity,

the step of etching the region also removes the second region to thereby remove the second facet and produce a second channel between the opposite sidewall and the electro-optically active stack, and

the step of filling the channel includes filling the second channel with amorphous silicon.

18. The method of claim 17 , wherein the silicon based electro-optically active device is a quantum-confined Stark effect based electro-absorption modulator.

19. The method of claim 18 , further comprising forming a modulator waveguide in the electro-optically active stack and forming a waveguide in the SOI wafer, wherein the electro-optically active stack includes a buffer layer, and the method includes adjusting a height of the buffer layer such that an optical mode in the modulator waveguide matches an optical mode in the waveguide in the SOI wafer.

20. The method of claim 10 , wherein the electro-optically active stack is grown such that it has a parallelogramal or trapezoidal geometry.

21. A silicon based electro-optically active device comprising:

a silicon-on-insulator (SOI) waveguide;

an electro-optically active waveguide including an electro-optically active stack, the electro-optically active waveguide being coupled to the SOI waveguide and being separated from an insulator layer by a seed layer; and

a channel between the electro-optically active waveguide and the SOI waveguide,

wherein the channel is filled with a filling material with a refractive index greater than that of a material of a portion of the SOI waveguide forming a sidewall of the channel to thereby form a bridge waveguide in the channel between the SOI waveguide and the electro-optically active stack, and

wherein a layer of the electro-optically active stack in contact with the seed layer includes silicon germanium.