Method for manufacturing semiconductor device

1. A method for manufacturing a semiconductor device comprising:

forming an oxide semiconductor film;

forming an insulating film over the oxide semiconductor film;

forming a metal oxide film over and in contact with the insulating film, the metal oxide film including indium and zinc;

adding oxygen to the insulating film through the metal oxide film;

performing a heat treatment after adding oxygen;

forming a conductive film over the metal oxide film after performing the heat treatment; and

processing the insulating film and the metal oxide film so that a side surface of the insulating film, a side surface of the metal oxide film, and a side surface of the conductive film are aligned,

wherein the metal oxide film and the conductive film are collectively configured to be a gate electrode of a transistor.

2. A method for manufacturing a semiconductor device comprising:

forming an oxide semiconductor film;

forming an insulating film over the oxide semiconductor film;

forming a metal oxide film over and in contact with the insulating film, the metal oxide film including indium and zinc;

adding oxygen to the insulating film through the metal oxide film;

performing a heat treatment after forming the metal oxide film;

forming a conductive film over the metal oxide film after performing the heat treatment; and

processing the insulating film and the metal oxide film so that a side surface of the insulating film, a side surface of the metal oxide film, and a side surface of the conductive film are aligned,

wherein the conductive film includes a region overlapping with the oxide semiconductor film with the insulating film and the metal oxide film interposed therebetween, and

wherein the metal oxide film and the conductive film are collectively configured to be a gate electrode of a transistor.

3. A method for manufacturing a semiconductor device comprising:

forming an oxide semiconductor film;

forming an insulating film over the oxide semiconductor film;

forming a first metal oxide film over and in contact with the insulating film, the first metal oxide film including indium and zinc;

adding oxygen to the insulating film through the first metal oxide film;

performing a heat treatment after forming the first metal oxide film;

forming a conductive film as a first gate electrode over the first metal oxide film after performing the heat treatment;

processing each of the insulating film and the first metal oxide film so that a first region and a second region in the oxide semiconductor film are exposed to form an gate insulating film and a second metal oxide film, respectively; and

forming a nitride insulating film over the first region, the second region, and the first gate electrode so that the nitride insulating film being in contact with a top surface of the first region, a top surface of the second region, a top surface and a side surface of the first gate electrode, a side surface of the second metal oxide film, and a side surface of the gate insulating film,

wherein the oxide semiconductor film further includes a third region between the first region and the second region,

wherein the first gate electrode includes a region overlapping with the third region with the gate insulating film and the second metal oxide film interposed therebetween,

wherein the side surface of the gate insulating film, the side surface of the second metal oxide film, and the side surface of the first gate electrode are aligned, and

wherein the second metal oxide film and the first gate electrode are collectively configured to be a second gate electrode of a transistor.

4. A method for manufacturing a semiconductor device comprising:

forming an oxide semiconductor film;

performing a first heat treatment to the oxide semiconductor film;

forming an insulating film over the oxide semiconductor film after performing the first heat treatment;

forming a metal oxide film over and in contact with the insulating film, the metal oxide film including indium and zinc;

adding oxygen to the insulating film through the metal oxide film;

performing a second heat treatment after forming the metal oxide film;

forming a conductive film over the metal oxide film after performing the second heat treatment, and

processing the insulating film and the metal oxide film so that a side surface of the insulating film, a side surface of the metal oxide film, and a side surface of the conductive film are aligned,

wherein the metal oxide film and the conductive film are configured to collectively be a gate electrode of a transistor.

5. A method for manufacturing a semiconductor device comprising:

forming an oxide semiconductor film;

performing a first heat treatment to the oxide semiconductor film;

forming an insulating film over the oxide semiconductor film after performing the first heat treatment;

forming a metal oxide film over and in contact with the insulating film, the metal oxide film including indium and zinc;

adding oxygen to the insulating film through the metal oxide film;

performing a second heat treatment after forming the metal oxide film;

forming a conductive film over the metal oxide film after performing the second heat treatment; and

processing the insulating film and the metal oxide film so that a side surface of the insulating film, a side surface of the metal oxide film, and a side surface of the conductive film are aligned,

wherein the conductive film includes a region overlapping with the oxide semiconductor film with the insulating film and the metal oxide film interposed therebetween, and

wherein the metal oxide film and the conductive film are collectively configured to be a gate electrode of a transistor.

6. A method for manufacturing a semiconductor device comprising:

forming an oxide semiconductor film;

performing a first heat treatment to the oxide semiconductor film;

forming an insulating film over the oxide semiconductor film after performing the first heat treatment;

forming a first metal oxide film over and in contact with the insulating film, the first metal oxide film including indium and zinc;

adding oxygen to the insulating film through the first metal oxide film;

performing a second heat treatment after forming the first metal oxide film;

forming a conductive film as a first gate electrode over the first metal oxide film after performing the second heat treatment;

processing each of the insulating film and the first metal oxide film so that a first region and a second region in the oxide semiconductor film are exposed to form an gate insulating film and a second metal oxide film, respectively; and

forming a nitride insulating film over the first region, the second region, and the first gate electrode so that the nitride insulating film being in contact with a top surface of the first region, a top surface of the second region, a top surface and a side surface of the first gate electrode, a side surface of the second metal oxide film, and a side surface of the gate insulating film,

wherein the oxide semiconductor film further includes a third region between the first region and the second region,

wherein the first gate electrode includes a region overlapping with the third region with the gate insulating film and the second metal oxide film interposed therebetween,

wherein the side surface of the gate insulating film, the side surface of the second metal oxide film, and the side surface of the first gate electrode are aligned, and

wherein the second metal oxide film and the first gate electrode are collectively configured to be a second gate electrode of a transistor.