Magnetic memory devices
A magnetic memory device includes a first magnetic tunnel junction pattern on a substrate, a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern, and a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern. The conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.
1. A magnetic memory device, comprising:
a first magnetic tunnel junction pattern on a substrate;
a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern; and
a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern, the conductive line including:
a first conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern, and
a second conductive line between the first conductive line and the second magnetic tunnel junction pattern, the second conductive line including a magnetic element, the first and second conductive lines extending on an upper surface of an insulating layer, and the insulating layer covering side surfaces of the first magnetic tunnel junction pattern,
wherein the conductive line is configured such that a current flowing through the conductive line flows in parallel to an interface between the conductive line and each of the first and second magnetic tunnel junction patterns.
2. The magnetic memory device as claimed in claim 1 , wherein:
the first magnetic tunnel junction pattern is between the substrate and the conductive line,
the first magnetic tunnel junction pattern including a first reference magnetic pattern, a first tunnel barrier pattern, and a first free magnetic pattern, which are sequentially stacked on the substrate, and
the first free magnetic pattern is between the first tunnel barrier pattern and the conductive line.
3. The magnetic memory device as claimed in claim 2 , wherein:
the second magnetic tunnel junction pattern includes a second free magnetic pattern, a second tunnel barrier pattern, and a second reference magnetic pattern, which are sequentially stacked on the conductive line, and
the second free magnetic pattern is between the second tunnel barrier pattern and the conductive line.
4. The magnetic memory device as claimed in claim 3 , wherein the first free magnetic pattern includes a different material from that of the second free magnetic pattern.
5. The magnetic memory device as claimed in claim 3 , wherein a composition of the first free magnetic pattern is different from a composition of the second free magnetic pattern.
6. The magnetic memory device as claimed in claim 3 , wherein a thickness of the first free magnetic pattern is different from a thickness of the second free magnetic pattern.
7. The magnetic memory device as claimed in claim 3 , wherein the first reference magnetic pattern includes a different material from that of the second reference magnetic pattern.
8. The magnetic memory device as claimed in claim 3 , wherein a composition of the first reference magnetic pattern is different from a composition of the second reference magnetic pattern.
9. The magnetic memory device as claimed in claim 3 , wherein a thickness of the first reference magnetic pattern is different from a thickness of the second reference magnetic pattern.
10. The magnetic memory device as claimed in claim 1 , wherein the conductive line is to apply spin-orbit torque to the first and second magnetic tunnel junction patterns.
11. The magnetic memory device as claimed in claim 1 , further comprising a selection element on the substrate, the first magnetic tunnel junction pattern being electrically connected to one terminal of the selection element.
12. The magnetic memory device as claimed in claim 11 , further comprising an upper interconnection line on the second magnetic tunnel junction pattern, the second magnetic tunnel junction pattern being directly between the second conductive line and the upper interconnection line and being electrically connected to the upper interconnection line.
13. The magnetic memory device as claimed in claim 1 , further comprising lower interconnection lines on the second conductive line, the lower interconnection lines being horizontally spaced apart from each other along the second conductive line and being connected to different portions of the second conductive line, respectively,
wherein a bottom portion of the second magnetic tunnel junction pattern is between the spaced apart lower interconnection lines, lower surfaces of the second magnetic tunnel junction pattern and the lower interconnection lines facing a same direction.
14. The magnetic memory device as claimed in claim 1 , wherein lengths of both the first and second conductive lines extend beyond widths of the first and second magnetic tunnel junction patterns along a direction parallel to the bottom surface of the substrate.
15. A magnetic memory device, comprising:
a first magnetic tunnel junction pattern on a substrate;
a second magnetic tunnel junction pattern on the first magnetic tunnel junction pattern; and
a conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern, the conductive line including:
a first conductive line between the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern, and
a second conductive line between the first conductive line and the second magnetic tunnel junction pattern, the second conductive line extending beyond widths of the first and second magnetic tunnel junction patterns along a direction parallel to a bottom surface of the substrate, and including a magnetic element,
wherein the conductive line is to apply spin-orbit torque to the first and second magnetic tunnel junction patterns.
16. The magnetic memory device as claimed in claim 15 , wherein;
the first magnetic tunnel junction pattern and the second magnetic tunnel junction pattern are stacked in a first direction perpendicular to a top surface of the substrate, and
the conductive line extends in a second direction parallel to the top surface of the substrate.
17. The magnetic memory device as claimed in claim 15 , wherein:
the first magnetic tunnel junction pattern includes a first free magnetic pattern, a first reference magnetic pattern, and a first tunnel barrier pattern between the first free magnetic pattern and the first reference magnetic pattern,
the second magnetic tunnel junction pattern includes a second free magnetic pattern, a second reference magnetic pattern, and a second tunnel barrier pattern between the second free magnetic pattern and the second reference magnetic pattern, and
the first free magnetic pattern is between the first tunnel barrier pattern and the conductive line, and the second free magnetic pattern is between the second tunnel barrier pattern and the conductive line.
18. The magnetic memory device as claimed in claim 17 , wherein the first free magnetic pattern and the second free magnetic pattern are in contact with the conductive line.
19. The magnetic memory device as claimed in claim 17 , wherein the first and second conductive lines have same lengths along the direction parallel to the bottom surface of the substrate, and completely overlap each other, the second conductive line being different from the second free magnetic pattern.
20. The magnetic memory device as claimed in claim 19 , wherein the first conductive line includes a non-magnetic metal element.