Solid state memory component
A solid state memory component can include a plurality of bit lines, a source line, and a plurality of non-functional memory pillars. Each non-functional memory pillar is electrically isolated from one or both of the plurality of bit lines and the source line. A solid state memory component can include a plurality of pillars located in a periphery portion of the solid state memory component, and memory cells adjacent to each of the pillars. Associated systems and methods are also disclosed.
1. A solid state memory component, comprising:
a plurality of pillars located in a periphery region of the solid state memory component, each of the plurality of pillars electrically isolated from one or both of a bitline and a source line; and
memory cells adjacent to each of the plurality of pillars.
2. The solid state memory component of claim 1 , wherein each of the memory cells comprises a charge storage structure.
3. The solid state memory component of claim 2 , wherein the charge storage structure is a floating gate.
4. The solid state memory component of claim 2 , wherein each of the memory cells comprises a control gate.
5. The solid state memory component of claim 2 , wherein each of the memory cells comprises:
a tunnel dielectric adjacent to a pillar;
a charge storage structure adjacent to the tunnel dielectric;
a blocking dielectric adjacent to the charge storage structure; and
a control gate adjacent to the blocking dielectric.
6. The solid state memory component of claim 2 , wherein:
the charge storage structure comprises a charge trap.
7. The solid state memory component of claim 6 , wherein:
the charge trap includes a dielectric.
8. The solid state memory component of claim 7 wherein: the dielectric includes one or more of: a nitride, a high-κ dielectric, a silicon-containing dielectric, alumina (AL 2 O 3 ), a dielectric including embedded particles including one or more of silicon, germanium, or metal crystals, SiON, or Si 3 N 4 .
9. The solid state memory component of claim 1 , further comprising:
a second plurality of pillars in a memory array region of the solid state memory component, some of the second plurality of pillars electrically isolated from one or both of the bitline and the source line.
10. The solid state memory component of claim 9 , wherein at least some of the second plurality of pillars located in the memory array region are electrically coupled to a bit line and a source line, and each of the plurality of pillars located in the periphery region is electrically isolated from at least one of the bit line and the source line.
11. The solid state memory component of claim 1 , wherein:
the plurality of pillars are located in a global periphery region.
12. The solid state memory component of claim 1 , further comprising:
a memory array region including blocks of memory arrays;
wherein the periphery region includes a block periphery region between memory blocks; and
wherein the plurality of pillars is located in the block periphery region.
13. A solid state memory component, comprising:
a plurality of pillars located in a memory array region of the solid state memory component, the plurality of pillars including first pillars coupled with a bitline and a source line and second pillars electrically isolated from one or both of the bitline and the source line; and
memory cells adjacent to each of the plurality of pillars.
14. The solid state memory component of claim 13 , wherein each of the memory cells comprises a charge storage structure.
15. The solid state memory component of claim 14 , wherein the charge storage structure comprises a floating gate.
16. The solid state memory component of claim 14 , wherein:
wherein the charge storage structure comprises a charge trap.
17. The solid state memory component of claim 16 , wherein:
the charge trap includes a dielectric.
18. The solid state memory component of claim 17 , wherein the dielectric includes one or more of: a nitride, a high-κ dielectric, a silicon-containing dielectric, alumina (AL 2 O 3 ), a dielectric including embedded particles including one or more of silicon, germanium, or metal crystals, SiON, or Si 3 N 4 .
19. The solid state memory component of claim 13 , wherein each of the memory cells comprises a control gate.
20. The solid state memory component of claim 13 , wherein each of the memory cells comprises:
a tunnel dielectric adjacent to a pillar;
a charge storage structure adjacent to the tunnel dielectric;
a blocking dielectric adjacent to a charge storage structure; and
a control gate adjacent to the blocking dielectric.
21. The solid state memory component of claim 13 , further comprising:
a second plurality of pillars in a periphery of the solid state memory component, each of the second plurality of pillars electrically isolated from one or both of the bitline and the source line.
22. The solid state memory component of claim 21 , wherein:
the second plurality of pillars are located in a global periphery region.
23. The solid state memory component of claim 21 , wherein:
the memory array region includes blocks of memory arrays;
wherein the periphery includes a block periphery region between memory blocks; and
wherein the second plurality of pillars is located in the block periphery region.
24. A NAND memory device comprising:
a memory array region and a periphery;
a first plurality of memory pillars in the memory array region, at least some of the first plurality of memory pillars coupled with a bitline and a source line;
a second plurality of memory pillars in the periphery, each of the second plurality of memory pillars electrically isolated from one or both of the bitline and the source line; and
NAND memory cells adjacent to each of the first plurality of memory pillars and the second plurality of memory pillars.
25. The NAND memory device of claim 24 , wherein: each of the NAND memory cells comprises a charge trap, the charge trap comprising a dielectric.
26. The NAND memory device of claim 25 , wherein the dielectric includes one or more of: a nitride, a high-κ dielectric, a silicon-containing dielectric, alumina (AL 2 O 3 ), a dielectric including embedded particles including one or more of silicon, germanium, or metal crystals, SiON, or Si 3 N 4 .
27. The NAND memory device of claim 24 , wherein:
some of the first plurality of memory pillars are electrically isolated from one or both of the bitline and the source line.
28. The NAND memory device of claim 24 , wherein:
the second plurality of memory pillars are located in a global periphery region.
29. The NAND memory device of claim 24 , wherein:
the memory array region includes blocks of memory arrays;
wherein the periphery includes a block periphery region between memory blocks; and
wherein the second plurality of memory pillars is located in the block periphery region.