Integrated assemblies having thicker semiconductor material along one region of a conductive structure than along another region, and methods of forming integrated assemblies
Some embodiments include an integrated assembly having a conductive structure which includes a semiconductor material over a metal-containing material. A stack of alternating conductive levels and insulative levels is over the conductive structure. A partition extends through the stack. The partition has wall regions, and has corner regions where two or more wall regions meet. The conductive structure includes a first portion which extends directly under the corner regions, and includes a second portion which is directly under the wall regions and is not directly under the corner regions. The first portion has a first thickness of the semiconductor material and the second portion has a second thickness of the semiconductor material. The first thickness is greater than the second thickness. Some embodiments include methods of forming integrated assemblies.
1. An integrated assembly, comprising:
a conductive structure comprising a semiconductor material over a metal-containing material;
an assembly over the conductive structure and comprising a stack of wordline levels;
a partition extending through the stack; the partition comprising wall regions, and comprising corner regions where two or more wall regions meet; the partition dividing the assembly into sub-blocks; and
the conductive structure comprising a first portion which extends to directly under the corner regions, and comprising a second portion which is directly under the wall regions and is not directly under the corner regions;
the first portion comprising a thicker region of the semiconductor material than the second portion.
2. The integrated assembly of claim 1 wherein the partition directly contacts a top of the conductive structure.
3. The integrated assembly of claim 1 wherein the conductive structure has an overall thickness; wherein the semiconductor material of the first portion comprises greater than about half of said overall thickness; and wherein the semiconductor material of the second portion comprises less than or equal to about half of said overall thickness.
4. The integrated assembly of claim 1 comprising a CMOS under the conductive structure and electrically coupled with the conductive structure.
5. The integrated assembly of claim 1 wherein the conductive structure is a source structure coupled with the assembly.
6. The integrated assembly of claim 1 wherein the first portion of the conductive structure only comprises the semiconductor material.
7. The integrated assembly of claim 1 wherein the semiconductor material comprises conductively-doped silicon.
8. The integrated assembly of claim 1 wherein the partition only comprises insulative material.
9. The integrated assembly of claim 1 wherein the partition consists of silicon dioxide.
10. The integrated assembly of claim 1 wherein the partition comprises insulative panels on opposing sides of a conductive core.
11. The integrated assembly of claim 1 comprising cavities extending into the first portion; at least one of the cavities has a depth that is deeper than a thickness of the second thickness.
12. The integrated assembly of claim 1 wherein the semiconductor material is directly against the metal-containing material.